JPS6474716A - Substrate support of device for forming thin film - Google Patents
Substrate support of device for forming thin filmInfo
- Publication number
- JPS6474716A JPS6474716A JP23102387A JP23102387A JPS6474716A JP S6474716 A JPS6474716 A JP S6474716A JP 23102387 A JP23102387 A JP 23102387A JP 23102387 A JP23102387 A JP 23102387A JP S6474716 A JPS6474716 A JP S6474716A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thermal conductivity
- substrate support
- infrared rays
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title abstract 9
- 239000010409 thin film Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To improve heating efficiency of a substrate by constituting a substrate support of an inorganic substance having higher thermal conductivity than quartz glass together with high transmittivity of infrared rays. CONSTITUTION:A subject substrate support is constituted of an inorganic substance having more than 5W/m.k of thermal conductivity besides transmitting infrared rays all of wavelength 7-30mum or of a partial wavelength region. For instance, thermal conductivity of alumina is 36-46W/m.k higher than thermal conductivity of quartz glass besides transmitting infrared rays of 7-8.5mum, which is a part of wavelength absorbed by a silicon substrate. This alumina is used as the substrate support 5 of a thin film formation device. Thereby, heating efficiency of the substrate 4 can be heightened. For instance, when a tungsten film is formed on the silicon substrate 4 using this support 5, high piling-up speed can be obtained because of being able to heat the substrate 4 up to high temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23102387A JPS6474716A (en) | 1987-09-17 | 1987-09-17 | Substrate support of device for forming thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23102387A JPS6474716A (en) | 1987-09-17 | 1987-09-17 | Substrate support of device for forming thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6474716A true JPS6474716A (en) | 1989-03-20 |
Family
ID=16917052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23102387A Pending JPS6474716A (en) | 1987-09-17 | 1987-09-17 | Substrate support of device for forming thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6474716A (en) |
-
1987
- 1987-09-17 JP JP23102387A patent/JPS6474716A/en active Pending
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