JPS647550A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS647550A
JPS647550A JP62163742A JP16374287A JPS647550A JP S647550 A JPS647550 A JP S647550A JP 62163742 A JP62163742 A JP 62163742A JP 16374287 A JP16374287 A JP 16374287A JP S647550 A JPS647550 A JP S647550A
Authority
JP
Japan
Prior art keywords
silicon nitride
layer
nitride film
polycrystalline silicon
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62163742A
Other languages
Japanese (ja)
Inventor
Takayuki Kamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62163742A priority Critical patent/JPS647550A/en
Publication of JPS647550A publication Critical patent/JPS647550A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To realize with stability a high resistance value not to be affected by later processes by a method wherein the entire surface of a polycrystalline silicon layer, except where electrode wiring connections are planned, is covered by a silicon nitride film. CONSTITUTION:An semiconductor device of this design is constituted of an insulating film 2 formed on a semiconductor substrate 1, a first silicon nitride film 3 formed on the insulating film 2, a polycrystalline silicon layer 4 selectively formed on the first silicon nitride film 3, a second silicon nitride film 5 covering the polycrystalline silicon layer 4, and electrode wirings 6 connecting to the polycrystalline silicon layer 4 in an opening selectively formed in the second silicon nitride layer 5. Such silicon nitride films 3 and 5 will be so closely packed as to be suitable for preventing diffusion of impurities from the outside. This design produces a semiconductor device provided with a microstructure resistance layer higher in resistance and stability.
JP62163742A 1987-06-29 1987-06-29 Semiconductor device Pending JPS647550A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62163742A JPS647550A (en) 1987-06-29 1987-06-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62163742A JPS647550A (en) 1987-06-29 1987-06-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS647550A true JPS647550A (en) 1989-01-11

Family

ID=15779815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62163742A Pending JPS647550A (en) 1987-06-29 1987-06-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS647550A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465005A (en) * 1991-10-30 1995-11-07 Texas Instruments Incorporated Polysilicon resistor structure including polysilicon contacts
JP2017079254A (en) * 2015-10-20 2017-04-27 新日本無線株式会社 Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465005A (en) * 1991-10-30 1995-11-07 Texas Instruments Incorporated Polysilicon resistor structure including polysilicon contacts
US6261915B1 (en) 1991-10-30 2001-07-17 Texas Instruments Incorporated Process of making polysilicon resistor
JP2017079254A (en) * 2015-10-20 2017-04-27 新日本無線株式会社 Semiconductor device

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