JPS647563A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS647563A
JPS647563A JP16374587A JP16374587A JPS647563A JP S647563 A JPS647563 A JP S647563A JP 16374587 A JP16374587 A JP 16374587A JP 16374587 A JP16374587 A JP 16374587A JP S647563 A JPS647563 A JP S647563A
Authority
JP
Japan
Prior art keywords
reset
gate
gates
under
reset transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16374587A
Other languages
Japanese (ja)
Inventor
Kazuo Miwata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP16374587A priority Critical patent/JPS647563A/en
Publication of JPS647563A publication Critical patent/JPS647563A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To reduce a reset noise component by a method wherein a region low in potential is provided adjacently to a charge detecting region under a gate of a reset transistor. CONSTITUTION:The gates of a reset transistor are composed of two reset gates 15 and 16 separated by an insulating film 13 and an impurity layer 17 of a P-type is formed under the gate 15 close to a charge detecting region 10. The reset gates 15 and 16 are structured as mentioned above, SO that the potential under the gate 15 is lower than the potential under the gate 16. Therefore, when a reset transistor conductive turns non-conductive, carriers under the gates of the reset transistor flow toward a drain region 14. By these processes, a noise component can be decreased.
JP16374587A 1987-06-29 1987-06-29 Charge transfer device Pending JPS647563A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16374587A JPS647563A (en) 1987-06-29 1987-06-29 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16374587A JPS647563A (en) 1987-06-29 1987-06-29 Charge transfer device

Publications (1)

Publication Number Publication Date
JPS647563A true JPS647563A (en) 1989-01-11

Family

ID=15779876

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16374587A Pending JPS647563A (en) 1987-06-29 1987-06-29 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS647563A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100266417B1 (en) * 1996-02-05 2000-10-02 마찌다 가쯔히꼬 Amplfying type solid state imaging device and amplfying type solid state imaging apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100266417B1 (en) * 1996-02-05 2000-10-02 마찌다 가쯔히꼬 Amplfying type solid state imaging device and amplfying type solid state imaging apparatus

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