JPS647582A - Photosemiconductor device - Google Patents

Photosemiconductor device

Info

Publication number
JPS647582A
JPS647582A JP16104787A JP16104787A JPS647582A JP S647582 A JPS647582 A JP S647582A JP 16104787 A JP16104787 A JP 16104787A JP 16104787 A JP16104787 A JP 16104787A JP S647582 A JPS647582 A JP S647582A
Authority
JP
Japan
Prior art keywords
band width
quantum well
forbidden band
photosemiconductor
transmission path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16104787A
Other languages
Japanese (ja)
Inventor
Shuichi Iwabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP16104787A priority Critical patent/JPS647582A/en
Publication of JPS647582A publication Critical patent/JPS647582A/en
Pending legal-status Critical Current

Links

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  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To eliminate the hindrance factors for a normal operation by causing an optical transmission path to be composed of a plurality of laminated semiconductor layers and by forming the semiconductor layers having a narrow forbidden band width into a shape of a quantum well structure which is sandwiched by the semiconductor layers having a large forbidden band width. CONSTITUTION:A single quantum well structure of GaAs/AlxGa1-xAs (x=0.2) is formed on a GaAs structure 11 with a highly controllable molecular beam epitaxy. That is, an optical transmission path 10 which is composed of a quantum well structure where a GaAs crystal layer 13 having a small forbidden band width is sandwiched by GaAlAs crystal layers 12 and 14 having a large forbidden band width is formed. Then, for example, a photosemiconductor device can be formed by combining it with a photosemiconductor element on the basis of a quantum optical principle having a multi quantum well laser. The hindrance factors for normal operations of the photosemiconductor can be eliminated by the use of the optical transmission path having consistency with the photosemiconductor element in this way and the reliability of the device is improved.
JP16104787A 1987-06-30 1987-06-30 Photosemiconductor device Pending JPS647582A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16104787A JPS647582A (en) 1987-06-30 1987-06-30 Photosemiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16104787A JPS647582A (en) 1987-06-30 1987-06-30 Photosemiconductor device

Publications (1)

Publication Number Publication Date
JPS647582A true JPS647582A (en) 1989-01-11

Family

ID=15727593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16104787A Pending JPS647582A (en) 1987-06-30 1987-06-30 Photosemiconductor device

Country Status (1)

Country Link
JP (1) JPS647582A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04226545A (en) * 1990-06-29 1992-08-17 Ppg Ind Inc Organosiloxane compound polymer article and its preparation
JPH04226546A (en) * 1990-06-29 1992-08-17 Ppg Ind Inc Abrasion-resistant ceria-containing siloxane covering and its preparation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04226545A (en) * 1990-06-29 1992-08-17 Ppg Ind Inc Organosiloxane compound polymer article and its preparation
JPH04226546A (en) * 1990-06-29 1992-08-17 Ppg Ind Inc Abrasion-resistant ceria-containing siloxane covering and its preparation

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