JPS6476036A - Thin film transistor panel - Google Patents

Thin film transistor panel

Info

Publication number
JPS6476036A
JPS6476036A JP23336787A JP23336787A JPS6476036A JP S6476036 A JPS6476036 A JP S6476036A JP 23336787 A JP23336787 A JP 23336787A JP 23336787 A JP23336787 A JP 23336787A JP S6476036 A JPS6476036 A JP S6476036A
Authority
JP
Japan
Prior art keywords
tft
characteristic
thin film
film transistor
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23336787A
Other languages
Japanese (ja)
Other versions
JP2592463B2 (en
Inventor
Haruo Wakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP23336787A priority Critical patent/JP2592463B2/en
Publication of JPS6476036A publication Critical patent/JPS6476036A/en
Application granted granted Critical
Publication of JP2592463B2 publication Critical patent/JP2592463B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G02F1/1309—Repairing; Testing

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To contrive to facilitate the measurement and the inspection of a characteristic of a TFT by constituting the titled panel so that the potential can be applied to sources of all thin film transistors (TFT). CONSTITUTION:On an insulating substrate 2, each TFT 6 is formed, and thereafter, an insulating layer 18 is formed so as to cover a drain electrode 12 containing at least a drain line 3, and a channel part 17 of each TFT 6, and on this insulating layer 18 and an exposed source electrode 13, a transparent electrode 5 is formed, and this panel becomes a structure which can measure and inspect a characteristic of each TFT 6, in a state that these source electrodes 13 is all connected in common temporarily. In such a way, the source potential can be applied in a lump to many formed TFTs 6, therefore, the characteristic of the transistor can be measured and inspected easily.
JP23336787A 1987-09-17 1987-09-17 Thin film transistor panel Expired - Lifetime JP2592463B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23336787A JP2592463B2 (en) 1987-09-17 1987-09-17 Thin film transistor panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23336787A JP2592463B2 (en) 1987-09-17 1987-09-17 Thin film transistor panel

Publications (2)

Publication Number Publication Date
JPS6476036A true JPS6476036A (en) 1989-03-22
JP2592463B2 JP2592463B2 (en) 1997-03-19

Family

ID=16954022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23336787A Expired - Lifetime JP2592463B2 (en) 1987-09-17 1987-09-17 Thin film transistor panel

Country Status (1)

Country Link
JP (1) JP2592463B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH039328A (en) * 1989-06-07 1991-01-17 Hitachi Ltd liquid crystal display device
JPH05289104A (en) * 1992-04-10 1993-11-05 Matsushita Electric Ind Co Ltd LCD display panel
JPH07318973A (en) * 1991-03-26 1995-12-08 Semiconductor Energy Lab Co Ltd Semiconductor device and production of electro-optic device
US5956105A (en) * 1991-06-14 1999-09-21 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6778231B1 (en) 1991-06-14 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device
US6975296B1 (en) 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JP2008227498A (en) * 2007-03-09 2008-09-25 Korea Electronics Telecommun Thin film transistor including n-type and p-type CIS and method for manufacturing the same
US7554616B1 (en) 1992-04-28 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4239346A (en) * 1979-05-23 1980-12-16 Hughes Aircraft Company Compact liquid crystal display system
JPS5862623A (en) * 1981-10-09 1983-04-14 Seiko Instr & Electronics Ltd Liquid crystal display device
JPS60112089A (en) * 1983-11-22 1985-06-18 松下電器産業株式会社 Image display unit and manufacture thereof
JPS61235816A (en) * 1985-04-11 1986-10-21 Asahi Glass Co Ltd Thin film active element
JPS62223727A (en) * 1986-03-25 1987-10-01 Seiko Epson Corp Liquid crystal panel

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4239346A (en) * 1979-05-23 1980-12-16 Hughes Aircraft Company Compact liquid crystal display system
JPS5862623A (en) * 1981-10-09 1983-04-14 Seiko Instr & Electronics Ltd Liquid crystal display device
JPS60112089A (en) * 1983-11-22 1985-06-18 松下電器産業株式会社 Image display unit and manufacture thereof
JPS61235816A (en) * 1985-04-11 1986-10-21 Asahi Glass Co Ltd Thin film active element
JPS62223727A (en) * 1986-03-25 1987-10-01 Seiko Epson Corp Liquid crystal panel

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH039328A (en) * 1989-06-07 1991-01-17 Hitachi Ltd liquid crystal display device
JPH07318973A (en) * 1991-03-26 1995-12-08 Semiconductor Energy Lab Co Ltd Semiconductor device and production of electro-optic device
US5933205A (en) * 1991-03-26 1999-08-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for driving the same
US5963278A (en) * 1991-03-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for driving the same
US5956105A (en) * 1991-06-14 1999-09-21 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6778231B1 (en) 1991-06-14 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device
US6975296B1 (en) 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JPH05289104A (en) * 1992-04-10 1993-11-05 Matsushita Electric Ind Co Ltd LCD display panel
US7554616B1 (en) 1992-04-28 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JP2008227498A (en) * 2007-03-09 2008-09-25 Korea Electronics Telecommun Thin film transistor including n-type and p-type CIS and method for manufacturing the same

Also Published As

Publication number Publication date
JP2592463B2 (en) 1997-03-19

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