JPS6422066A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
JPS6422066A
JPS6422066A JP62178397A JP17839787A JPS6422066A JP S6422066 A JPS6422066 A JP S6422066A JP 62178397 A JP62178397 A JP 62178397A JP 17839787 A JP17839787 A JP 17839787A JP S6422066 A JPS6422066 A JP S6422066A
Authority
JP
Japan
Prior art keywords
film
gate electrode
thin film
electrode
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62178397A
Other languages
Japanese (ja)
Inventor
Koji Suzuki
Hiroshi Otaguro
Masahiko Akiyama
Hisao Toeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62178397A priority Critical patent/JPS6422066A/en
Publication of JPS6422066A publication Critical patent/JPS6422066A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Liquid Crystal (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To reduce the leak current for light incidence from gate electrode side without deteriorating other element characteristics, by a method wherein, in a thin film transistor used in an active matrix type liquid crystal display device and the like, patterning is performed in the manner in which a specified amount of a semiconductor thin film protrudes in the direction of current flow from an electrode edge. CONSTITUTION:On a substrate on which a gate electrode 2 and an address wiring 3 are formed, an a-Si: H film 5 is formed in a specified pattern, via a gate insulating film 4, which is, e.g., one of SiOx and SiNx, or a lamination film of them. The a-Si: H film 5 is an undoped high resistance film of about 300nm in thickness, on which source.drain electrodes 7, 8 are formed via an N-type a-Si: H film 61, 62. The electrodes 7, 8 and a data wiring 9 are made of an Al film, and a display electrode 10 composed of a transparent conductive film is formed on a picture element region. On the a-Si: H film, a pattern is formed so as to protrude with d (mum) from an edge of the gate electrode 2, in the width direction of the gate electrode 2, e.g., the current path direction of a transistor. The amount of protruding (d) is 0<d<=4.
JP62178397A 1987-07-17 1987-07-17 Thin film transistor Pending JPS6422066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62178397A JPS6422066A (en) 1987-07-17 1987-07-17 Thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62178397A JPS6422066A (en) 1987-07-17 1987-07-17 Thin film transistor

Publications (1)

Publication Number Publication Date
JPS6422066A true JPS6422066A (en) 1989-01-25

Family

ID=16047785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62178397A Pending JPS6422066A (en) 1987-07-17 1987-07-17 Thin film transistor

Country Status (1)

Country Link
JP (1) JPS6422066A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270229A (en) * 1989-03-07 1993-12-14 Matsushita Electric Industrial Co., Ltd. Thin film semiconductor device and process for producing thereof
JP2007094433A (en) * 2000-11-30 2007-04-12 Nec Lcd Technologies Ltd Active matrix liquid crystal display device and switching element
JP2015109448A (en) * 2009-12-04 2015-06-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599941A (en) * 1982-07-08 1984-01-19 Matsushita Electric Ind Co Ltd Thin-film semiconductor device and its manufacture
JPS59165088A (en) * 1983-03-11 1984-09-18 株式会社リコー Matrix array for thin film transistor
JPS6293978A (en) * 1985-10-21 1987-04-30 Hitachi Ltd Manufacture of thin film transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599941A (en) * 1982-07-08 1984-01-19 Matsushita Electric Ind Co Ltd Thin-film semiconductor device and its manufacture
JPS59165088A (en) * 1983-03-11 1984-09-18 株式会社リコー Matrix array for thin film transistor
JPS6293978A (en) * 1985-10-21 1987-04-30 Hitachi Ltd Manufacture of thin film transistor

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270229A (en) * 1989-03-07 1993-12-14 Matsushita Electric Industrial Co., Ltd. Thin film semiconductor device and process for producing thereof
JP2007094433A (en) * 2000-11-30 2007-04-12 Nec Lcd Technologies Ltd Active matrix liquid crystal display device and switching element
JP2015109448A (en) * 2009-12-04 2015-06-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US9240467B2 (en) 2009-12-04 2016-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9721811B2 (en) 2009-12-04 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device having an oxide semiconductor layer
US10109500B2 (en) 2009-12-04 2018-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10490420B2 (en) 2009-12-04 2019-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10714358B2 (en) 2009-12-04 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US11456187B2 (en) 2009-12-04 2022-09-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor-device
US11923204B2 (en) 2009-12-04 2024-03-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device comprising oxide semiconductor
US12593633B2 (en) 2009-12-04 2026-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor

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