JPS647614A - Compound semiconductor thin film - Google Patents
Compound semiconductor thin filmInfo
- Publication number
- JPS647614A JPS647614A JP16122387A JP16122387A JPS647614A JP S647614 A JPS647614 A JP S647614A JP 16122387 A JP16122387 A JP 16122387A JP 16122387 A JP16122387 A JP 16122387A JP S647614 A JPS647614 A JP S647614A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gaas
- thin
- gasb
- flow rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 150000001875 compounds Chemical class 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010408 film Substances 0.000 abstract 4
- 229910005542 GaSb Inorganic materials 0.000 abstract 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract 1
- 229910000070 arsenic hydride Inorganic materials 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
Abstract
PURPOSE:To obtain a thin GaAS film having remarkably small carbon mixture amount by incorporating specific amount of Sb in the film to overcome a disadvantage of a MOCVD method. CONSTITUTION:Sb is contained as 0.05-0.3% of GaSb in a thin GaAS film. The reason why the concentration of the Sb in the GaAS as the GaSb is 0.05-0.3% is because it is desired to set to 0.3% or less to endure a distortion due to lattice misalignment in the thin GaAS film of several mum of thickness while it is desired to contain 0.05% or more to generate an Sb doping effect. For example, an Sb-doped thin GaAS thin film having 0.15% of Sb amount as the GaSb is grown on a 2 deg. OFF semiinsulating GaAS substrate (100) under growing conditions of 0.04cc of SbH2 added by MOCVD method, 640 deg.C of substrate temperature, 5 l/min of H2 gas flow rate, atmospheric pressure in a reaction tube 1.1cc of Ga(CH3)3 flow rate and 12.4cc of AsH3 flow rate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16122387A JPS647614A (en) | 1987-06-30 | 1987-06-30 | Compound semiconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16122387A JPS647614A (en) | 1987-06-30 | 1987-06-30 | Compound semiconductor thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS647614A true JPS647614A (en) | 1989-01-11 |
Family
ID=15730966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16122387A Pending JPS647614A (en) | 1987-06-30 | 1987-06-30 | Compound semiconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS647614A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04100842A (en) * | 1990-08-17 | 1992-04-02 | Chisso Corp | Polyethylene composition |
-
1987
- 1987-06-30 JP JP16122387A patent/JPS647614A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04100842A (en) * | 1990-08-17 | 1992-04-02 | Chisso Corp | Polyethylene composition |
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