JPS647614A - Compound semiconductor thin film - Google Patents

Compound semiconductor thin film

Info

Publication number: JPS647614A
Authority: JP; Japan
Prior art keywords: film; gaas; thin; gasb; flow rate
Prior art date: 1987-06-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP16122387A

Other languages

English (en)

Inventor

Masaji Yoshida

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

NEC Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-06-30

Filing date

1987-06-30

Publication date

1989-01-11

1987-06-30 Application filed by NEC Corp filed Critical NEC Corp

1987-06-30 Priority to JP16122387A priority Critical patent/JPS647614A/ja

1989-01-11 Publication of JPS647614A publication Critical patent/JPS647614A/ja

Status Pending legal-status Critical Current

Links

239000010409 thin film Substances 0.000 title abstract 2
150000001875 compounds Chemical class 0.000 title 1
239000004065 semiconductor Substances 0.000 title 1
239000010408 film Substances 0.000 abstract 4
229910005542 GaSb Inorganic materials 0.000 abstract 3
238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract 2
238000000034 method Methods 0.000 abstract 2
239000000758 substrate Substances 0.000 abstract 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract 1
229910000070 arsenic hydride Inorganic materials 0.000 abstract 1
229910052799 carbon Inorganic materials 0.000 abstract 1
239000000203 mixture Substances 0.000 abstract 1

JP16122387A 1987-06-30 1987-06-30 Compound semiconductor thin film Pending JPS647614A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP16122387A JPS647614A (en)	1987-06-30	1987-06-30	Compound semiconductor thin film

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP16122387A JPS647614A (en)	1987-06-30	1987-06-30	Compound semiconductor thin film

Publications (1)

Publication Number	Publication Date
JPS647614A true JPS647614A (en)	1989-01-11

Family

ID=15730966

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP16122387A Pending JPS647614A (en)	1987-06-30	1987-06-30	Compound semiconductor thin film

Country Status (1)

Country	Link
JP (1)	JPS647614A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH04100842A (ja) *	1990-08-17	1992-04-02	Chisso Corp	ポリエチレン組成物

1987
- 1987-06-30 JP JP16122387A patent/JPS647614A/ja active Pending

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH04100842A (ja) *	1990-08-17	1992-04-02	Chisso Corp	ポリエチレン組成物

Similar Documents

Publication	Publication Date	Title
JPS63227007A (ja)	1988-09-21	気相成長方法
EP0524817B1 (en)	1999-03-17	Crystal growth method of III - V compound semiconductor
JPS647614A (en)	1989-01-11	Compound semiconductor thin film
JP3013992B2 (ja)	2000-02-28	化合物半導体結晶の成長方法
JP2577550B2 (ja)	1997-02-05	▲ｉｉｉ▼−▲ｖ▼族化合物半導体単結晶薄膜の不純物添加法
JPH0754802B2 (ja)	1995-06-07	ＧａＡｓ薄膜の気相成長法
JPS6437832A (en)	1989-02-08	Method of growing compound semiconductor crystal
KR950011016B1 (ko)	1995-09-27	초고진공 화학기상 증착법을 이용한 반도체 에피탁시 성장법
JP2889291B2 (ja)	1999-05-10	▲ＩＩＩ▼―▲Ｖ▼族化合物ｐ型半導体の製造方法
JP3035953B2 (ja)	2000-04-24	▲ｉｉｉ▼―▲ｖ▼族化合物半導体の気相成長方法
JPS55167199A (en)	1980-12-26	Vapor phase epitaxial growing apparatus
JP2924072B2 (ja)	1999-07-26	有機金属分子線エピタキシャル成長方法及びその成長装置
JP2790013B2 (ja)	1998-08-27	Ｉｉｉ−ｖ族化合物半導体のエピタキシャル成長方法
Dip et al.	1992	Atomic-layer epitaxy of device-quality Al0. 3Ga0. 7As
JPS57149721A (en)	1982-09-16	Method of vapor epitaxial growth
JPS6163599A (ja)	1986-04-01	気相成長装置
JPS59172718A (ja)	1984-09-29	３−５族化合物半導体の成長方法及び装置
JP3381587B2 (ja)	2003-03-04	化合物半導体ウェハの製造方法
JPS56114317A (en)	1981-09-08	Manufacture of semiconductor heterojunction photoelectric device
JPH0590160A (ja)	1993-04-09	結晶成長方法
Hu et al.	1995	Metalorganic chemical vapor deposition growth technique of GaAlAsGaAs double heterostructures for photocathodes
JPH03240222A (ja)	1991-10-25	有機金属分子線エピタキシャル成長方法
JPS6388822A (ja)	1988-04-19	化合物半導体単結晶の気相成長法
JPS61187226A (ja)	1986-08-20	気相成長装置
JPH08335553A (ja)	1996-12-17	選択エピタキシャル成長方法