JPS647664A - Manufacture of field-effect transistor - Google Patents

Manufacture of field-effect transistor

Info

Publication number
JPS647664A
JPS647664A JP62161315A JP16131587A JPS647664A JP S647664 A JPS647664 A JP S647664A JP 62161315 A JP62161315 A JP 62161315A JP 16131587 A JP16131587 A JP 16131587A JP S647664 A JPS647664 A JP S647664A
Authority
JP
Japan
Prior art keywords
layer
photo
type operating
opening section
resist layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62161315A
Other languages
Japanese (ja)
Inventor
Masayoshi Miyauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62161315A priority Critical patent/JPS647664A/en
Publication of JPS647664A publication Critical patent/JPS647664A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/161—Source or drain regions of field-effect devices of FETs having Schottky gates

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To form two-stage recesses excellent in the reproducibility and controllability of a shape and size, and to equalize characteristics by selectively implanting the ions of an impurity to a semiconductor substrate in a gate- electrode forming predetermined region and breaking the crystallizability of the substrate and shaping multistage recesses by utilizing the difference of etching rates generated as the result of the breaking of the crystallizability. CONSTITUTION:An insulating layer 104 and a photo-resist layer 11 with an opening section 11a are formed onto the surface of an N-type operating layer 102, and an opening section 114 wider than the opening section 11a is shaped to the insulating layer 104, using the photo-resist layer 11 as a mask. Ions are implanted into a gate-electrode forming predetermined region in the N-type operating layer 102 through the opening section 11a in the photo-resist layer 11 to form a crystal braking layer 12. The surface of the N-type operating layer 102 is etched through the opening sections 11a, 114 in the photo-resist layer 11 and the insulating layer 104, and the crystal breaking layer 12 and the N-type operating layer 102 not crystal-broken are removed, thus shaping multistage recesses 22. A gate electrode 105G is formed through a lift-off method through the photo-resist layer 11.
JP62161315A 1987-06-30 1987-06-30 Manufacture of field-effect transistor Pending JPS647664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62161315A JPS647664A (en) 1987-06-30 1987-06-30 Manufacture of field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62161315A JPS647664A (en) 1987-06-30 1987-06-30 Manufacture of field-effect transistor

Publications (1)

Publication Number Publication Date
JPS647664A true JPS647664A (en) 1989-01-11

Family

ID=15732762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62161315A Pending JPS647664A (en) 1987-06-30 1987-06-30 Manufacture of field-effect transistor

Country Status (1)

Country Link
JP (1) JPS647664A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH023938A (en) * 1988-06-20 1990-01-09 Mitsubishi Electric Corp Field effect transistor
JPH0449626A (en) * 1990-06-19 1992-02-19 Nec Corp Field-effect transistor
US5270228A (en) * 1991-02-14 1993-12-14 Mitsubishi Denki Kabushiki Kaisha Method of fabricating gate electrode in recess
EP0447840A3 (en) * 1990-02-26 1995-08-16 Rohm Co Ltd Compound semiconducteur device manufacturing process and a compound semiconducteur device manufactured by the same
US5534452A (en) * 1994-10-11 1996-07-09 Mitsubishi Denki Kabushiki Kaisha Method for producing semiconductor device
US5556797A (en) * 1995-05-30 1996-09-17 Hughes Aircraft Company Method of fabricating a self-aligned double recess gate profile
US5886373A (en) * 1997-01-27 1999-03-23 Mitsubishi Denki Kabushiki Kaisha Field effect transistor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH023938A (en) * 1988-06-20 1990-01-09 Mitsubishi Electric Corp Field effect transistor
EP0447840A3 (en) * 1990-02-26 1995-08-16 Rohm Co Ltd Compound semiconducteur device manufacturing process and a compound semiconducteur device manufactured by the same
JPH0449626A (en) * 1990-06-19 1992-02-19 Nec Corp Field-effect transistor
US5270228A (en) * 1991-02-14 1993-12-14 Mitsubishi Denki Kabushiki Kaisha Method of fabricating gate electrode in recess
US5534452A (en) * 1994-10-11 1996-07-09 Mitsubishi Denki Kabushiki Kaisha Method for producing semiconductor device
US5556797A (en) * 1995-05-30 1996-09-17 Hughes Aircraft Company Method of fabricating a self-aligned double recess gate profile
US5886373A (en) * 1997-01-27 1999-03-23 Mitsubishi Denki Kabushiki Kaisha Field effect transistor

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