JPS6476729A - Method and device for manufacturing semiconductor device - Google Patents

Method and device for manufacturing semiconductor device

Info

Publication number
JPS6476729A
JPS6476729A JP62235330A JP23533087A JPS6476729A JP S6476729 A JPS6476729 A JP S6476729A JP 62235330 A JP62235330 A JP 62235330A JP 23533087 A JP23533087 A JP 23533087A JP S6476729 A JPS6476729 A JP S6476729A
Authority
JP
Japan
Prior art keywords
arrow
inert gas
copper
removal
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62235330A
Other languages
Japanese (ja)
Inventor
Hitoshi Fujimoto
Hiroshi Kawashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62235330A priority Critical patent/JPS6476729A/en
Publication of JPS6476729A publication Critical patent/JPS6476729A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Die Bonding (AREA)

Abstract

PURPOSE:To stop oxidation of the surface of a copper alloy and a copper plated surface by sealing only the inner lead of a lead frame and its periphery, thermally curing them in a state that the upper part of a semiconductor pellet is opened in an inert gas atmosphere, and removing externally from above the pellet an outgas component generated from an adhesive. CONSTITUTION:When a lead frame 1 to which a semiconductor pellet 5 is die bonded and resin adhesive 4 is heated by a hot plate 16 and inert gas always introduced and supplied into a device body 1 is blown from a plurality of gas guide holes 17 of the plate 16 as designated by an arrow (a), the interior of the body 1 becomes the inert gas atmosphere, and the atmosphere is maintained at approx. 500ppm of remaining oxygen concentration by a removal from an opening 13 to an exterior as shown by an arrow (b) and a removal from a plurality of gas drain holes 15 directed toward the opening 13 at the inner periphery to an exterior shown by an arrow (c), and the oxidations of the surface of copper alloy of the frame 1 and the surface of a copper-plated surface can be rapidly stopped.
JP62235330A 1987-09-17 1987-09-17 Method and device for manufacturing semiconductor device Pending JPS6476729A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62235330A JPS6476729A (en) 1987-09-17 1987-09-17 Method and device for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62235330A JPS6476729A (en) 1987-09-17 1987-09-17 Method and device for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JPS6476729A true JPS6476729A (en) 1989-03-22

Family

ID=16984509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62235330A Pending JPS6476729A (en) 1987-09-17 1987-09-17 Method and device for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS6476729A (en)

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