JPS6476776A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To shorten manufacturing process, and facilitate forming a fine structure, by forming, on a substrate, a resist pattern having an aperture part on a gate electrode forming region, and selectively forming one or more layers of metal film or semiconductor film, only on an ohmic electrode forming region. CONSTITUTION:On a semiinsulative GaAs substrate 1, are grown an I-GaAs layer 2, an N-AlGaAs layer 3 and an N-GaAs layer 4, and thereon, an electrode forming region 11 and a resist pattern 10 having aperture parts on a gate electrode forming region 12 is formed, by using photo lithography art. In order that the region 12 of small aperture may not be coated, a metal film or a semiconductor film 53 is stuck only on the region 11, from the oblique direction, by a deposition method. By a vertical RIE method using CCl2F2+He as a reaction gas, the exposed N-GaAs layer 4 is subjected to etching and eliminated. By evaporation method, an aluminum film 61 is vertically stuck. By eliminating a resist pattern, an ohmic electrode and a gate electrode are simultaneously formed.