JPS6477187A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS6477187A
JPS6477187A JP62232398A JP23239887A JPS6477187A JP S6477187 A JPS6477187 A JP S6477187A JP 62232398 A JP62232398 A JP 62232398A JP 23239887 A JP23239887 A JP 23239887A JP S6477187 A JPS6477187 A JP S6477187A
Authority
JP
Japan
Prior art keywords
waveguide
section
laser beam
laser
diffraction gratings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62232398A
Other languages
Japanese (ja)
Inventor
Masao Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62232398A priority Critical patent/JPS6477187A/en
Publication of JPS6477187A publication Critical patent/JPS6477187A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To make a laser beam with narrow spectral line width to be stably emitted, by adjusting the phase of the return laser beam in the boundary surface between a laser section and a waveguide section to a desired value by both the effects of diffraction gratings and the control of waveguide length. CONSTITUTION:A waveguide section comproses diffraction gratings 2B, 2C which are formed inside both the end surfaces of a waveguide 3 guiding the incident laser beam from a laser section, an index varying region N of the waveguide located between the diffraction gratings, an electrode 12 for controlling waveguide length which is disposed over the index varying region N in order to inject carriers by which the waveguide length is effectively controlled. According to this structure, the laser beam generated in the laser section is made to enter into the waveguide section, and the incident laser beam is then reflected by the end surfaces of the waveguide section to return the laser beam to the laser section. Therefore, when the spectral line width of the laser beam is contracted, the phase of the return laser beam in the boundary surface between the laser section and the waveguide section can be adjusted to the desired value owing to both the effects of the diffraction gratings and the control of the waveguide length.
JP62232398A 1987-09-18 1987-09-18 Semiconductor laser device Pending JPS6477187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62232398A JPS6477187A (en) 1987-09-18 1987-09-18 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62232398A JPS6477187A (en) 1987-09-18 1987-09-18 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS6477187A true JPS6477187A (en) 1989-03-23

Family

ID=16938618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62232398A Pending JPS6477187A (en) 1987-09-18 1987-09-18 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS6477187A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013168500A (en) * 2012-02-15 2013-08-29 Mitsubishi Electric Corp Optical semiconductor device
US9698566B1 (en) 2016-04-07 2017-07-04 Mitsubishi Electric Corporation Optical module

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013168500A (en) * 2012-02-15 2013-08-29 Mitsubishi Electric Corp Optical semiconductor device
US9698566B1 (en) 2016-04-07 2017-07-04 Mitsubishi Electric Corporation Optical module
JP2017188596A (en) * 2016-04-07 2017-10-12 三菱電機株式会社 Optical module

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