JPS6477190A - Manufacture of semiconductor laser device - Google Patents

Abstract

PURPOSE:To reduce the reactive current flowing through an active layer on both sides of a stripe-shape groove section, by forming a conversion layer of P-type in a clad layer of N-type. CONSTITUTION:A photoresist 21 is coated on a current blocking layer 15 and a stripe-shaped opening is then formed in the photoresist 21. Subsequently, the current blocking layer 15 is selectively etched using the resist 21 as a mask to form a stripe shaped groove section 22. Next, after the resist 21 is removed, prior to the second crystal growth, heat treatment is performed at high temperature in the As pressurized atmosphere. Therefore, impurities of P-type contained in a clad layer 14 of P-type are diffused into a clad layer 12 of N-type. As a result, the part of the clad layer 12 of N-type which is in contact with an active layer 1, except the part thereof under the stripe-shaped groove section 22, is converted the conductivity type thereof from N-type to P-type so that a ccnversion layer 19 of P-type is formed by self-aligning. Accordingly, the reactive current flowing through the outside of the stripe-shaped luminous region can be sufficiently reduced, and the semiconductor laser device with a low threshold value can be produced.