JPS6477975A - Manufacture of light receiving device - Google Patents
Manufacture of light receiving deviceInfo
- Publication number
- JPS6477975A JPS6477975A JP62235410A JP23541087A JPS6477975A JP S6477975 A JPS6477975 A JP S6477975A JP 62235410 A JP62235410 A JP 62235410A JP 23541087 A JP23541087 A JP 23541087A JP S6477975 A JPS6477975 A JP S6477975A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- thin film
- semiconductor layer
- electrode layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 5
- 239000010409 thin film Substances 0.000 abstract 5
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To improve workability and to improve adhesion of a thin film semiconductor layer, by patterning the thin film semiconductor layer and a second electrode layer, forming an island part on a substrate at the same time as the formation of a first electrode layer, and forming a thin film semiconductor layer thereon. CONSTITUTION:On a substrate 1 having an insulating surface, a first electrode layer 2 comprising a light receiving region 2a and a first output terminal part 2b and an island part layer 3 are formed. Then, a thin film semiconductor layer 4 is formed on the approximately entire surface of the substrate, and a second electrode layer 5 is sequentially formed on the approximately entire surface of the layer 4. The second electrode layer 5 and the thin semiconductor layer 4 are patterned into the same configuration in this order by photolithography. Light receiving parts 5a and 4a and second output terminals 5b and 4b are overlapped on the light receiving part 2a of the first electrode layer 2. The island part layer 3 having excellent adhesion with the substrate 1 is provided, and the separation of the thin film semiconductor layer 4 from the substrate 1 is prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62235410A JP2664377B2 (en) | 1987-09-18 | 1987-09-18 | Manufacturing method of light receiving device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62235410A JP2664377B2 (en) | 1987-09-18 | 1987-09-18 | Manufacturing method of light receiving device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6477975A true JPS6477975A (en) | 1989-03-23 |
| JP2664377B2 JP2664377B2 (en) | 1997-10-15 |
Family
ID=16985683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62235410A Expired - Lifetime JP2664377B2 (en) | 1987-09-18 | 1987-09-18 | Manufacturing method of light receiving device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2664377B2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5754377A (en) * | 1980-09-18 | 1982-03-31 | Canon Inc | Photoelectric converting element |
-
1987
- 1987-09-18 JP JP62235410A patent/JP2664377B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5754377A (en) * | 1980-09-18 | 1982-03-31 | Canon Inc | Photoelectric converting element |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2664377B2 (en) | 1997-10-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080620 Year of fee payment: 11 |