JPS6479368A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPS6479368A
JPS6479368A JP23768787A JP23768787A JPS6479368A JP S6479368 A JPS6479368 A JP S6479368A JP 23768787 A JP23768787 A JP 23768787A JP 23768787 A JP23768787 A JP 23768787A JP S6479368 A JPS6479368 A JP S6479368A
Authority
JP
Japan
Prior art keywords
chamber
pressure
gas
atm
opened
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23768787A
Other languages
Japanese (ja)
Inventor
Kiyotaka Shimabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP23768787A priority Critical patent/JPS6479368A/en
Publication of JPS6479368A publication Critical patent/JPS6479368A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To stabilize a discharge characteristic at all times so that a thin film having specified characteristics can be formed by ejecting a gas of the pressure higher than atm. pressure into a low-pressure gas ionization chamber while the chamber is opened. CONSTITUTION:A target electrode 6 and a substrate electrode 13 are disposed to face each other in the low-pressure gas ionization chamber 1. The upper flange 2 of the low-pressure gas ionization chamber 1 is opened at the time of mounting and dismounting a substrate 14, and a valve mechanism 22 is operated simultaneously to introduce dried gaseous nitrogen, etc., into the chamber. This gas is fed under a pressure higher than the atm. pressure into a pipe 21 and is discharged from a gas ejection port 20 into the chamber 1. The gas of the high pressure is blown to the side wall 4 of the chamber 1 or the substrate electrode 13, etc., while the chamber 1 is opened. The adsorption of water molecules, etc., in the atm. is, therefore, prevented and the discharge characteristic is stabilized. Furthermore, the intrusion of impurity components into the sputtering gas is obviated.
JP23768787A 1987-09-21 1987-09-21 Sputtering device Pending JPS6479368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23768787A JPS6479368A (en) 1987-09-21 1987-09-21 Sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23768787A JPS6479368A (en) 1987-09-21 1987-09-21 Sputtering device

Publications (1)

Publication Number Publication Date
JPS6479368A true JPS6479368A (en) 1989-03-24

Family

ID=17019019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23768787A Pending JPS6479368A (en) 1987-09-21 1987-09-21 Sputtering device

Country Status (1)

Country Link
JP (1) JPS6479368A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011006462A1 (en) * 2011-03-30 2012-10-04 Von Ardenne Anlagentechnik Gmbh Channeling vacuum process systems, comprises feeding air in a lock chamber of the vacuum process system until pressure is equally large within and outside of the lock chamber, and opening the lock chamber to atmosphere
WO2020219253A1 (en) * 2019-04-22 2020-10-29 Applied Materials, Inc. Gas flow system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011006462A1 (en) * 2011-03-30 2012-10-04 Von Ardenne Anlagentechnik Gmbh Channeling vacuum process systems, comprises feeding air in a lock chamber of the vacuum process system until pressure is equally large within and outside of the lock chamber, and opening the lock chamber to atmosphere
DE102011006462B4 (en) * 2011-03-30 2016-01-07 Von Ardenne Gmbh Schleusverfahren for a vacuum process plant
WO2020219253A1 (en) * 2019-04-22 2020-10-29 Applied Materials, Inc. Gas flow system

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