JPS6480044A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6480044A JPS6480044A JP23658887A JP23658887A JPS6480044A JP S6480044 A JPS6480044 A JP S6480044A JP 23658887 A JP23658887 A JP 23658887A JP 23658887 A JP23658887 A JP 23658887A JP S6480044 A JPS6480044 A JP S6480044A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- wiring conductor
- hillock
- oxidized
- decreasing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000004020 conductor Substances 0.000 abstract 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000007743 anodising Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent the formation of hillock developed from a wiring conductor without decreasing very much the volume of the wiring conductor, by coating the side faces of the wiring conductor with alumina and also coating its upper face with a metal having a high melting point. CONSTITUTION:A plasma silicon nitride film pattern 4a, a high-melting metal layer pattern 3a, and a conductor layer pattern 2a are formed through an etching process by using a resist pattern 5 as a mask. After that, the pattern 5 is removed. The whole face on a semiconductor substrate is oxidized by O2 sauntering or anodizing. The side faces of the pattern 2a are oxidized to form an alumina film 6 with a film thickness of hundreds of Angstrom . This structure prevents the formation of hillock developed from a wiring conductor without decreasing very much the volume of the wiring conductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23658887A JPS6480044A (en) | 1987-09-21 | 1987-09-21 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23658887A JPS6480044A (en) | 1987-09-21 | 1987-09-21 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6480044A true JPS6480044A (en) | 1989-03-24 |
Family
ID=17002863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23658887A Pending JPS6480044A (en) | 1987-09-21 | 1987-09-21 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6480044A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05182969A (en) * | 1992-01-06 | 1993-07-23 | Nec Yamagata Ltd | Semiconductor device |
| US5741742A (en) * | 1993-09-10 | 1998-04-21 | Sony Corporation | Formation of aluminum-alloy pattern |
| JP2010182957A (en) * | 2009-02-06 | 2010-08-19 | Seiko Instruments Inc | Semiconductor device manufacturing method, semiconductor device, and semiconductor manufacturing device |
-
1987
- 1987-09-21 JP JP23658887A patent/JPS6480044A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05182969A (en) * | 1992-01-06 | 1993-07-23 | Nec Yamagata Ltd | Semiconductor device |
| US5741742A (en) * | 1993-09-10 | 1998-04-21 | Sony Corporation | Formation of aluminum-alloy pattern |
| JP2010182957A (en) * | 2009-02-06 | 2010-08-19 | Seiko Instruments Inc | Semiconductor device manufacturing method, semiconductor device, and semiconductor manufacturing device |
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