JPS6480044A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6480044A
JPS6480044A JP62236588A JP23658887A JPS6480044A JP S6480044 A JPS6480044 A JP S6480044A JP 62236588 A JP62236588 A JP 62236588A JP 23658887 A JP23658887 A JP 23658887A JP S6480044 A JPS6480044 A JP S6480044A
Authority
JP
Japan
Prior art keywords
pattern
wiring conductor
hillock
oxidized
decreasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62236588A
Other languages
Japanese (ja)
Inventor
Tomoyuki Hikita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62236588A priority Critical patent/JPS6480044A/en
Publication of JPS6480044A publication Critical patent/JPS6480044A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the formation of hillock developed from a wiring conductor without decreasing very much the volume of the wiring conductor, by coating the side faces of the wiring conductor with alumina and also coating its upper face with a metal having a high melting point. CONSTITUTION:A plasma silicon nitride film pattern 4a, a high-melting metal layer pattern 3a, and a conductor layer pattern 2a are formed through an etching process by using a resist pattern 5 as a mask. After that, the pattern 5 is removed. The whole face on a semiconductor substrate is oxidized by O2 sauntering or anodizing. The side faces of the pattern 2a are oxidized to form an alumina film 6 with a film thickness of hundreds of Angstrom . This structure prevents the formation of hillock developed from a wiring conductor without decreasing very much the volume of the wiring conductor.
JP62236588A 1987-09-21 1987-09-21 Semiconductor device Pending JPS6480044A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62236588A JPS6480044A (en) 1987-09-21 1987-09-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62236588A JPS6480044A (en) 1987-09-21 1987-09-21 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6480044A true JPS6480044A (en) 1989-03-24

Family

ID=17002863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62236588A Pending JPS6480044A (en) 1987-09-21 1987-09-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6480044A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05182969A (en) * 1992-01-06 1993-07-23 Nec Yamagata Ltd Semiconductor device
US5741742A (en) * 1993-09-10 1998-04-21 Sony Corporation Formation of aluminum-alloy pattern
JP2010182957A (en) * 2009-02-06 2010-08-19 Seiko Instruments Inc Semiconductor device manufacturing method, semiconductor device, and semiconductor manufacturing device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05182969A (en) * 1992-01-06 1993-07-23 Nec Yamagata Ltd Semiconductor device
US5741742A (en) * 1993-09-10 1998-04-21 Sony Corporation Formation of aluminum-alloy pattern
JP2010182957A (en) * 2009-02-06 2010-08-19 Seiko Instruments Inc Semiconductor device manufacturing method, semiconductor device, and semiconductor manufacturing device

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