JPS6480080A - Contact type image sensor - Google Patents

Contact type image sensor

Info

Publication number
JPS6480080A
JPS6480080A JP62236479A JP23647987A JPS6480080A JP S6480080 A JPS6480080 A JP S6480080A JP 62236479 A JP62236479 A JP 62236479A JP 23647987 A JP23647987 A JP 23647987A JP S6480080 A JPS6480080 A JP S6480080A
Authority
JP
Japan
Prior art keywords
film
thin film
leakage current
pattern layer
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62236479A
Other languages
Japanese (ja)
Inventor
Hajime Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62236479A priority Critical patent/JPS6480080A/en
Publication of JPS6480080A publication Critical patent/JPS6480080A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To inhibit the generation of a leakage current at a photoelectric conversion part by a method wherein an insulative thin film is formed between a metallic thin film pattern layer and a semiconductor thin film. CONSTITUTION:Individual electrodes 2a and a common electrode 2b are constituted of a chrome thin film pattern layer 2 and the pattern layer of an Si oxide film 10, which is a deposited insulating film, is formed on lead wirings 2c of the electrodes 2a. An a-Si film 3 is formed on the electrodes 2a and moreover, an I.T.O film 4, which is used as a transparent common electrode, is formed from the upper surface of the film 3 extending over the upper surface of the electrode 2b by a sputtering deposition method and so on. As the lead parts 2c under the region of the a-Si deposited film are insulated with the layer 10 at a photoelectric conversion part, the generation of a leakage current from the lead parts 2c is inhibited and the deterioration of a resolution due to this leakage current can be prevented.
JP62236479A 1987-09-21 1987-09-21 Contact type image sensor Pending JPS6480080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62236479A JPS6480080A (en) 1987-09-21 1987-09-21 Contact type image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62236479A JPS6480080A (en) 1987-09-21 1987-09-21 Contact type image sensor

Publications (1)

Publication Number Publication Date
JPS6480080A true JPS6480080A (en) 1989-03-24

Family

ID=17001344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62236479A Pending JPS6480080A (en) 1987-09-21 1987-09-21 Contact type image sensor

Country Status (1)

Country Link
JP (1) JPS6480080A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5352921A (en) * 1991-03-18 1994-10-04 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and image sensor
JPH077174A (en) * 1993-01-28 1995-01-10 Gold Star Electron Co Ltd Photodiode and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5352921A (en) * 1991-03-18 1994-10-04 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and image sensor
JPH077174A (en) * 1993-01-28 1995-01-10 Gold Star Electron Co Ltd Photodiode and manufacturing method thereof

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