JPS6450572A - Semiconductor radiation ray detection element - Google Patents

Abstract

PURPOSE:To obtain the title element having a low leak current and excellent reliability and stability by a method wherein a metal electrode layer is formed at least on a part of the region on the amorphous semiconductor layer A located on a single crystal semiconductor substrate, and an amorphous semiconductor layer B is provided covering at least the end part of the junction part of the metal electrode layer and the amor phous semiconductor layer A. CONSTITUTION:An amorphous semiconductor layer A2 covering a single crystal semicon ductor substrate 1, a metal electrode layer 3 covering at least a part of said amorphous semiconductor layer A2, and an amorphous semiconductor layer B4 at least covering the end part of the junction part of the above-mentioned metal electrode layer 3 and the above-mentioned amorphous semiconductor layer A2 are provided. For exam ple, an amorphous SiC semiconductor layer A2 of 3000Angstrom is deposited on a P-type single crystal Si substrate 1 of 5mm square, having the specific resistance of 10kOMEGAcm or thereabout, the plane direction of 111, the thickness of 500mum. The metal electrode layer 3 of 4000Angstrom is deposited thereon, and patterning is conducted in 3mm square. Besides, an amorphous SiC semiconductor layer B4 of 5000Angstrom is deposited thereon, a contact hole 5 to be used to contact a lead wire with which the metal electrode layer 3 and the external circuit are linked is performed, and a metal electrode layer 6 is formed on the rear surface.