JPS6482671A - Manufacture of mis field-effect transistor - Google Patents

Manufacture of mis field-effect transistor

Info

Publication number: JPS6482671A
Authority: JP; Japan
Prior art keywords: aln; film; forming; layer; substrate
Prior art date: 1987-09-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP24213487A

Other languages

English (en)

Inventor

Asako Tatsumi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

NEC Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-09-25

Filing date

1987-09-25

Publication date

1989-03-28

1987-09-25 Application filed by NEC Corp filed Critical NEC Corp

1987-09-25 Priority to JP24213487A priority Critical patent/JPS6482671A/ja

1989-03-28 Publication of JPS6482671A publication Critical patent/JPS6482671A/ja

Status Pending legal-status Critical Current

Links

230000005669 field effect Effects 0.000 title 1
238000004519 manufacturing process Methods 0.000 title 1
239000000758 substrate Substances 0.000 abstract 3
238000000034 method Methods 0.000 abstract 2
239000004065 semiconductor Substances 0.000 abstract 2
229910052782 aluminium Inorganic materials 0.000 abstract 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
150000001875 compounds Chemical class 0.000 abstract 1
238000010438 heat treatment Methods 0.000 abstract 1
229910052751 metal Inorganic materials 0.000 abstract 1
239000002184 metal Substances 0.000 abstract 1
229910052760 oxygen Inorganic materials 0.000 abstract 1
239000001301 oxygen Substances 0.000 abstract 1
229920002120 photoresistant polymer Polymers 0.000 abstract 1
230000001681 protective effect Effects 0.000 abstract 1

Landscapes

Formation Of Insulating Films (AREA)

JP24213487A 1987-09-25 1987-09-25 Manufacture of mis field-effect transistor Pending JPS6482671A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP24213487A JPS6482671A (en)	1987-09-25	1987-09-25	Manufacture of mis field-effect transistor

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP24213487A JPS6482671A (en)	1987-09-25	1987-09-25	Manufacture of mis field-effect transistor

Publications (1)

Publication Number	Publication Date
JPS6482671A true JPS6482671A (en)	1989-03-28

Family

ID=17084813

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP24213487A Pending JPS6482671A (en)	1987-09-25	1987-09-25	Manufacture of mis field-effect transistor

Country Status (1)

Country	Link
JP (1)	JPS6482671A (ja)

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2001004943A1 (en) *	1999-07-07	2001-01-18	Matsushita Electric Industrial Co., Ltd.	Multilayered body, method for fabricating multilayered body, and semiconductor device
US6855368B1 (en)	2000-06-28	2005-02-15	Applied Materials, Inc.	Method and system for controlling the presence of fluorine in refractory metal layers
US6878206B2 (en)	2001-07-16	2005-04-12	Applied Materials, Inc.	Lid assembly for a processing system to facilitate sequential deposition techniques
US6911391B2 (en)	2002-01-26	2005-06-28	Applied Materials, Inc.	Integration of titanium and titanium nitride layers
JP2005183597A (ja) *	2003-12-18	2005-07-07	Nec Corp	窒化物半導体ｍｉｓ型電界効果トランジスタ
US6916398B2 (en)	2001-10-26	2005-07-12	Applied Materials, Inc.	Gas delivery apparatus and method for atomic layer deposition
US6936906B2 (en)	2001-09-26	2005-08-30	Applied Materials, Inc.	Integration of barrier layer and seed layer
US6951804B2 (en)	2001-02-02	2005-10-04	Applied Materials, Inc.	Formation of a tantalum-nitride layer
US6998579B2 (en)	2000-12-29	2006-02-14	Applied Materials, Inc.	Chamber for uniform substrate heating
US7022948B2 (en)	2000-12-29	2006-04-04	Applied Materials, Inc.	Chamber for uniform substrate heating
US7049226B2 (en)	2001-09-26	2006-05-23	Applied Materials, Inc.	Integration of ALD tantalum nitride for copper metallization
US7085616B2 (en)	2001-07-27	2006-08-01	Applied Materials, Inc.	Atomic layer deposition apparatus
US7101795B1 (en)	2000-06-28	2006-09-05	Applied Materials, Inc.	Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7115499B2 (en)	2002-02-26	2006-10-03	Applied Materials, Inc.	Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7201803B2 (en)	2001-03-07	2007-04-10	Applied Materials, Inc.	Valve control system for atomic layer deposition chamber
US7208413B2 (en)	2000-06-27	2007-04-24	Applied Materials, Inc.	Formation of boride barrier layers using chemisorption techniques
US7211144B2 (en)	2001-07-13	2007-05-01	Applied Materials, Inc.	Pulsed nucleation deposition of tungsten layers
US7262133B2 (en)	2003-01-07	2007-08-28	Applied Materials, Inc.	Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7405158B2 (en)	2000-06-28	2008-07-29	Applied Materials, Inc.	Methods for depositing tungsten layers employing atomic layer deposition techniques
US7429506B2 (en)	2005-09-27	2008-09-30	Freescale Semiconductor, Inc.	Process of making a III-V compound semiconductor heterostructure MOSFET
US7432565B2 (en)	2005-09-27	2008-10-07	Freescale Semiconductor, Inc.	III-V compound semiconductor heterostructure MOSFET device
US7439191B2 (en)	2002-04-05	2008-10-21	Applied Materials, Inc.	Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7547952B2 (en)	2003-04-04	2009-06-16	Applied Materials, Inc.	Method for hafnium nitride deposition
US7595263B2 (en)	2003-06-18	2009-09-29	Applied Materials, Inc.	Atomic layer deposition of barrier materials

1987
- 1987-09-25 JP JP24213487A patent/JPS6482671A/ja active Pending

Cited By (37)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2001004943A1 (en) *	1999-07-07	2001-01-18	Matsushita Electric Industrial Co., Ltd.	Multilayered body, method for fabricating multilayered body, and semiconductor device
US7501343B2 (en)	2000-06-27	2009-03-10	Applied Materials, Inc.	Formation of boride barrier layers using chemisorption techniques
US7501344B2 (en)	2000-06-27	2009-03-10	Applied Materials, Inc.	Formation of boride barrier layers using chemisorption techniques
US7208413B2 (en)	2000-06-27	2007-04-24	Applied Materials, Inc.	Formation of boride barrier layers using chemisorption techniques
US7101795B1 (en)	2000-06-28	2006-09-05	Applied Materials, Inc.	Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6855368B1 (en)	2000-06-28	2005-02-15	Applied Materials, Inc.	Method and system for controlling the presence of fluorine in refractory metal layers
US7465666B2 (en)	2000-06-28	2008-12-16	Applied Materials, Inc.	Method for forming tungsten materials during vapor deposition processes
US7405158B2 (en)	2000-06-28	2008-07-29	Applied Materials, Inc.	Methods for depositing tungsten layers employing atomic layer deposition techniques
US7235486B2 (en)	2000-06-28	2007-06-26	Applied Materials, Inc.	Method for forming tungsten materials during vapor deposition processes
US7115494B2 (en)	2000-06-28	2006-10-03	Applied Materials, Inc.	Method and system for controlling the presence of fluorine in refractory metal layers
US7033922B2 (en)	2000-06-28	2006-04-25	Applied Materials. Inc.	Method and system for controlling the presence of fluorine in refractory metal layers
US7022948B2 (en)	2000-12-29	2006-04-04	Applied Materials, Inc.	Chamber for uniform substrate heating
US6998579B2 (en)	2000-12-29	2006-02-14	Applied Materials, Inc.	Chamber for uniform substrate heating
US7094680B2 (en)	2001-02-02	2006-08-22	Applied Materials, Inc.	Formation of a tantalum-nitride layer
US6951804B2 (en)	2001-02-02	2005-10-04	Applied Materials, Inc.	Formation of a tantalum-nitride layer
US9587310B2 (en)	2001-03-02	2017-03-07	Applied Materials, Inc.	Lid assembly for a processing system to facilitate sequential deposition techniques
US7201803B2 (en)	2001-03-07	2007-04-10	Applied Materials, Inc.	Valve control system for atomic layer deposition chamber
US7211144B2 (en)	2001-07-13	2007-05-01	Applied Materials, Inc.	Pulsed nucleation deposition of tungsten layers
US10280509B2 (en)	2001-07-16	2019-05-07	Applied Materials, Inc.	Lid assembly for a processing system to facilitate sequential deposition techniques
US6878206B2 (en)	2001-07-16	2005-04-12	Applied Materials, Inc.	Lid assembly for a processing system to facilitate sequential deposition techniques
US7085616B2 (en)	2001-07-27	2006-08-01	Applied Materials, Inc.	Atomic layer deposition apparatus
US7494908B2 (en)	2001-09-26	2009-02-24	Applied Materials, Inc.	Apparatus for integration of barrier layer and seed layer
US7049226B2 (en)	2001-09-26	2006-05-23	Applied Materials, Inc.	Integration of ALD tantalum nitride for copper metallization
US7352048B2 (en)	2001-09-26	2008-04-01	Applied Materials, Inc.	Integration of barrier layer and seed layer
US6936906B2 (en)	2001-09-26	2005-08-30	Applied Materials, Inc.	Integration of barrier layer and seed layer
US6916398B2 (en)	2001-10-26	2005-07-12	Applied Materials, Inc.	Gas delivery apparatus and method for atomic layer deposition
US7473638B2 (en)	2002-01-26	2009-01-06	Applied Materials, Inc.	Plasma-enhanced cyclic layer deposition process for barrier layers
US6911391B2 (en)	2002-01-26	2005-06-28	Applied Materials, Inc.	Integration of titanium and titanium nitride layers
US7429516B2 (en)	2002-02-26	2008-09-30	Applied Materials, Inc.	Tungsten nitride atomic layer deposition processes
US7115499B2 (en)	2002-02-26	2006-10-03	Applied Materials, Inc.	Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7439191B2 (en)	2002-04-05	2008-10-21	Applied Materials, Inc.	Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7262133B2 (en)	2003-01-07	2007-08-28	Applied Materials, Inc.	Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7547952B2 (en)	2003-04-04	2009-06-16	Applied Materials, Inc.	Method for hafnium nitride deposition
US7595263B2 (en)	2003-06-18	2009-09-29	Applied Materials, Inc.	Atomic layer deposition of barrier materials
JP2005183597A (ja) *	2003-12-18	2005-07-07	Nec Corp	窒化物半導体ｍｉｓ型電界効果トランジスタ
US7432565B2 (en)	2005-09-27	2008-10-07	Freescale Semiconductor, Inc.	III-V compound semiconductor heterostructure MOSFET device
US7429506B2 (en)	2005-09-27	2008-09-30	Freescale Semiconductor, Inc.	Process of making a III-V compound semiconductor heterostructure MOSFET

Publication	Publication Date	Title
JPS6482671A (en)	1989-03-28	Manufacture of mis field-effect transistor
US4663643A (en)	1987-05-05	Semiconductor device and process for producing the same
JPS57128071A (en)	1982-08-09	Field-effect type semiconductor device and manufacture thereof
JPS5748246A (en)	1982-03-19	Manufacture of semiconductor device
GB2211350A (en)	1989-06-28	A method of producing a schottky gate field effect transistor
JPS54158880A (en)	1979-12-15	Compound semiconductor device and its manufacture
JPS5499576A (en)	1979-08-06	Thin-film transistor and its manufacture
JPS54146584A (en)	1979-11-15	Manufacture of semiconductor device
US7842587B2 (en)	2010-11-30	III-V MOSFET fabrication and device
JPS6354228B2 (ja)	1988-10-27
JPS5730368A (en)	1982-02-18	Tunnel fet
Feng et al.	1984	GaAs MESFET's made by ion implantation into MOCVD buffer layers
JP2682032B2 (ja)	1997-11-26	半導体装置の製造方法
JPS57196582A (en)	1982-12-02	Field-effect transistor
JPS6441270A (en)	1989-02-13	Manufacture of field effect transistor
KR950001166B1 (ko)	1995-02-11	갈륨비소(GaAs) 화합물 반도체 장치의 제조방법
JPS57130477A (en)	1982-08-12	Manufacture of field-effect transistor
JPS63161625A (ja)	1988-07-05	電界効果トランジスタの製造方法
JPS6423571A (en)	1989-01-26	Semiconductor element
JPS60136264A (ja)	1985-07-19	半導体装置の製造方法
KR930001471A (ko)	1993-01-16	전력용 금속반도체 트랜지스터
JPS6461019A (en)	1989-03-08	Manufacture of compound semiconductor device
JPH05198601A (ja)	1993-08-06	電界効果トランジスタおよびその製造方法
JPS56153770A (en)	1981-11-27	Field-effect transistor
JPH03116834A (ja)	1991-05-17	ｎ型ＧａＡｓを用いた半導体構造の製造方法