JPS6482677A - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
JPS6482677A
JPS6482677A JP62242143A JP24214387A JPS6482677A JP S6482677 A JPS6482677 A JP S6482677A JP 62242143 A JP62242143 A JP 62242143A JP 24214387 A JP24214387 A JP 24214387A JP S6482677 A JPS6482677 A JP S6482677A
Authority
JP
Japan
Prior art keywords
planar
flux
fet
layer
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62242143A
Other languages
English (en)
Other versions
JP2586053B2 (ja
Inventor
Hironobu Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62242143A priority Critical patent/JP2586053B2/ja
Priority to US07/248,545 priority patent/US4942438A/en
Priority to EP88308896A priority patent/EP0309290A1/en
Publication of JPS6482677A publication Critical patent/JPS6482677A/ja
Application granted granted Critical
Publication of JP2586053B2 publication Critical patent/JP2586053B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H10D62/605—Planar doped, e.g. atomic-plane doped or delta-doped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/228—Channel regions of field-effect devices of FETs having delta-doped channels

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP62242143A 1987-09-25 1987-09-25 電界効果トランジスタ Expired - Lifetime JP2586053B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62242143A JP2586053B2 (ja) 1987-09-25 1987-09-25 電界効果トランジスタ
US07/248,545 US4942438A (en) 1987-09-25 1988-09-23 Compound semiconductor field-effect transistor
EP88308896A EP0309290A1 (en) 1987-09-25 1988-09-26 Compound semiconductor field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62242143A JP2586053B2 (ja) 1987-09-25 1987-09-25 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS6482677A true JPS6482677A (en) 1989-03-28
JP2586053B2 JP2586053B2 (ja) 1997-02-26

Family

ID=17084955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62242143A Expired - Lifetime JP2586053B2 (ja) 1987-09-25 1987-09-25 電界効果トランジスタ

Country Status (3)

Country Link
US (1) US4942438A (ja)
EP (1) EP0309290A1 (ja)
JP (1) JP2586053B2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02299273A (ja) * 1989-05-15 1990-12-11 Toshiba Corp 電界効果トランジスタ
US7507999B2 (en) 2002-07-11 2009-03-24 Panasonic Corporation Semiconductor device and method for manufacturing same

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5497015A (en) * 1988-11-12 1996-03-05 Sony Corporation Quantum interference transistor
US5013685A (en) * 1989-11-02 1991-05-07 At&T Bell Laboratories Method of making a non-alloyed ohmic contact to III-V semiconductors-on-silicon
US5081511A (en) * 1990-09-06 1992-01-14 Motorola, Inc. Heterojunction field effect transistor with monolayers in channel region
JP3135939B2 (ja) * 1991-06-20 2001-02-19 富士通株式会社 Ｈｅｍｔ型半導体装置
US5304825A (en) * 1992-08-20 1994-04-19 Motorola, Inc. Linear heterojunction field effect transistor
US5493136A (en) * 1993-02-22 1996-02-20 Sumitomo Electric Industries, Ltd. Field effect transistor and method of manufacturing the same
US5347141A (en) * 1993-11-09 1994-09-13 The United States Of America As Represented By The Secretary Of The Army Multiterminal lateral S-shaped negative differential conductance device
US6690035B1 (en) 2000-03-03 2004-02-10 Matsushita Electric Industrial Co., Ltd. Semiconductor device having an active region of alternating layers
EP1315212A4 (en) * 2000-11-21 2008-09-03 Matsushita Electric Industrial Co Ltd SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
GB0608515D0 (en) * 2006-04-28 2006-06-07 Univ Aberdeen Semiconductor device for generating an oscillating voltage

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61241972A (ja) * 1985-04-18 1986-10-28 Fujitsu Ltd 化合物半導体装置
JPS61274370A (ja) * 1985-05-29 1986-12-04 Fujitsu Ltd 接合形電界効果トランジスタ
JPS6235677A (ja) * 1985-08-09 1987-02-16 Fujitsu Ltd 反転型高電子移動度トランジスタ装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5910278A (ja) * 1983-06-24 1984-01-19 Hitachi Ltd 半導体装置
US4882609A (en) * 1984-11-19 1989-11-21 Max-Planck Gesellschaft Zur Forderung Der Wissenschafter E.V. Semiconductor devices with at least one monoatomic layer of doping atoms
JPS61216316A (ja) * 1985-02-22 1986-09-26 Fujitsu Ltd 半導体装置の製造方法
JPH06101559B2 (ja) * 1985-10-04 1994-12-12 日本電信電話株式会社 超格子電子素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61241972A (ja) * 1985-04-18 1986-10-28 Fujitsu Ltd 化合物半導体装置
JPS61274370A (ja) * 1985-05-29 1986-12-04 Fujitsu Ltd 接合形電界効果トランジスタ
JPS6235677A (ja) * 1985-08-09 1987-02-16 Fujitsu Ltd 反転型高電子移動度トランジスタ装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02299273A (ja) * 1989-05-15 1990-12-11 Toshiba Corp 電界効果トランジスタ
US7507999B2 (en) 2002-07-11 2009-03-24 Panasonic Corporation Semiconductor device and method for manufacturing same

Also Published As

Publication number Publication date
JP2586053B2 (ja) 1997-02-26
US4942438A (en) 1990-07-17
EP0309290A1 (en) 1989-03-29

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