JPS648632A - Formation of sio2 insulating film - Google Patents

Formation of sio2 insulating film

Info

Publication number
JPS648632A
JPS648632A JP16228887A JP16228887A JPS648632A JP S648632 A JPS648632 A JP S648632A JP 16228887 A JP16228887 A JP 16228887A JP 16228887 A JP16228887 A JP 16228887A JP S648632 A JPS648632 A JP S648632A
Authority
JP
Japan
Prior art keywords
gas
film
wirings
vessel
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16228887A
Other languages
Japanese (ja)
Inventor
Masao Sugita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16228887A priority Critical patent/JPS648632A/en
Publication of JPS648632A publication Critical patent/JPS648632A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve the step coverage of an SiO2 insulating film without a throughput by adding H2O steam to the reaction gas of silane gas and oxygen gas. CONSTITUTION:A semiconductor wafer 16 of a semiconductor device is placed in a reaction vessel 3, which is evacuated by a vacuum pump 2, and the wafer 16 is then held at its growing temperature by a support 14. In order to introduce reaction gas and dilute gas into the vessel 3, valves 5, 6, 7, 8 and 9 are opened, predetermined flowrates of N2, O2, SiH4. PH3 and B2H6 gases are fed. Simultaneously, in order to supply H2O steam into the vessel 3, valves 22 and/or 23 are opened to feed N2 and/or O2 gas from a pipe 19 into the water 17 of a bubbler 1 to form bubbles, and gas containing water is fed through a pipe 20. A BPSG film 34 is grown on the whole surfaces of polycrystalline silicon wirings 31 and SiO2 film 33 to form a surface profile film substantially faithful in the shape of a step. The ratio of the thicknesses of the film 34 on the upper face of the wirings 31 and film 33 to the side face of the wirings 31 becomes approx. 1:0.75, and step coverage is improved as compared with a conventional one.
JP16228887A 1987-07-01 1987-07-01 Formation of sio2 insulating film Pending JPS648632A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16228887A JPS648632A (en) 1987-07-01 1987-07-01 Formation of sio2 insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16228887A JPS648632A (en) 1987-07-01 1987-07-01 Formation of sio2 insulating film

Publications (1)

Publication Number Publication Date
JPS648632A true JPS648632A (en) 1989-01-12

Family

ID=15751638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16228887A Pending JPS648632A (en) 1987-07-01 1987-07-01 Formation of sio2 insulating film

Country Status (1)

Country Link
JP (1) JPS648632A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6228329A (en) * 1985-07-29 1987-02-06 加茂　守 Automatic labelling method
JPS63114134A (en) * 1986-10-31 1988-05-19 Toshiba Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6228329A (en) * 1985-07-29 1987-02-06 加茂　守 Automatic labelling method
JPS63114134A (en) * 1986-10-31 1988-05-19 Toshiba Corp Manufacture of semiconductor device

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