JPS6486520A - Exposure method - Google Patents
Exposure methodInfo
- Publication number
- JPS6486520A JPS6486520A JP62279893A JP27989387A JPS6486520A JP S6486520 A JPS6486520 A JP S6486520A JP 62279893 A JP62279893 A JP 62279893A JP 27989387 A JP27989387 A JP 27989387A JP S6486520 A JPS6486520 A JP S6486520A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- outer circumferential
- circumferential end
- end section
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 11
- 230000035939 shock Effects 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 230000003179 granulation Effects 0.000 abstract 1
- 238000005469 granulation Methods 0.000 abstract 1
- 239000013307 optical fiber Substances 0.000 abstract 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To prevent the formation of a resist film in the outer circumferential end section of a substrate, and to obviate the generation of defects by a mechanical shock by applying a resist onto the whole surface of a wafer, exposing the specified width of the outer circumferential end including an orientation flat section of the wafer and developing a region including at least the exposed part of outer circumferential end-section of the wafer. CONSTITUTION:A substrate 3 is fixed to a substrate fixing plate 4, and 3 resist solution is dropped from a nozzle 5. The substrate 3 is turned by a shaft 2, and the resist solution is spread onto the surface of the substrate 3 by centrifugal force. Light from a light source 11 is introduced to an optical fiber 10 while the substrate 3 is rotated and a resist film at the outer circumferential end section of the substrate 3 is exposed, and a developer is discharged from a nozzle 12 while the substrate 3 is revolved and the resist film at the outer circumferential end section of the exposed substrate is developed. Accordingly, even when a mechanical shock is applied to the outer circumferential end section of the substrate as gripping by forceps of the outer circumferential end section after pre-baking in the substrate, on which a resist is applied with the exception of the outer circumferential end section, no trouble such as the breaking and granulation of the resist film is generated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62279893A JPS6486520A (en) | 1987-11-04 | 1987-11-04 | Exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62279893A JPS6486520A (en) | 1987-11-04 | 1987-11-04 | Exposure method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6486520A true JPS6486520A (en) | 1989-03-31 |
Family
ID=17617393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62279893A Pending JPS6486520A (en) | 1987-11-04 | 1987-11-04 | Exposure method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6486520A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004088421A1 (en) * | 2003-03-31 | 2004-10-14 | Hoya Corporation | Mask blank, mask blank manufacturing method, transfer mask manufacturing method, and semiconductor device manufacturing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5111573A (en) * | 1974-07-19 | 1976-01-29 | Nippon Electric Co | Handotaisoshino seizohoho |
| JPS57162336A (en) * | 1981-03-30 | 1982-10-06 | Fujitsu Ltd | Coating method of resist on wafer |
| JPS5891637A (en) * | 1981-11-27 | 1983-05-31 | Nec Kyushu Ltd | Developing device |
| JPS5892221A (en) * | 1981-11-27 | 1983-06-01 | Nec Kyushu Ltd | Semiconductor substrate exposure device |
| JPS5898925A (en) * | 1981-12-08 | 1983-06-13 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device and manufacturing device thereof |
-
1987
- 1987-11-04 JP JP62279893A patent/JPS6486520A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5111573A (en) * | 1974-07-19 | 1976-01-29 | Nippon Electric Co | Handotaisoshino seizohoho |
| JPS57162336A (en) * | 1981-03-30 | 1982-10-06 | Fujitsu Ltd | Coating method of resist on wafer |
| JPS5891637A (en) * | 1981-11-27 | 1983-05-31 | Nec Kyushu Ltd | Developing device |
| JPS5892221A (en) * | 1981-11-27 | 1983-06-01 | Nec Kyushu Ltd | Semiconductor substrate exposure device |
| JPS5898925A (en) * | 1981-12-08 | 1983-06-13 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device and manufacturing device thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004088421A1 (en) * | 2003-03-31 | 2004-10-14 | Hoya Corporation | Mask blank, mask blank manufacturing method, transfer mask manufacturing method, and semiconductor device manufacturing method |
| US7713663B2 (en) | 2003-03-31 | 2010-05-11 | Hoya Corporation | Mask blank, manufacturing method of mask blank, manufacturing method of transfer mask and manufacturing method of semiconductor device |
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