JPS6486521A - Dry etching - Google Patents
Dry etchingInfo
- Publication number
- JPS6486521A JPS6486521A JP62242660A JP24266087A JPS6486521A JP S6486521 A JPS6486521 A JP S6486521A JP 62242660 A JP62242660 A JP 62242660A JP 24266087 A JP24266087 A JP 24266087A JP S6486521 A JPS6486521 A JP S6486521A
- Authority
- JP
- Japan
- Prior art keywords
- microwaves
- resist
- sidewall
- kept
- radicals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 title 1
- 239000002313 adhesive film Substances 0.000 abstract 3
- 229910052801 chlorine Inorganic materials 0.000 abstract 2
- 239000000460 chlorine Substances 0.000 abstract 2
- 229910052731 fluorine Inorganic materials 0.000 abstract 2
- 239000011737 fluorine Substances 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- ZQXCQTAELHSNAT-UHFFFAOYSA-N 1-chloro-3-nitro-5-(trifluoromethyl)benzene Chemical compound [O-][N+](=O)C1=CC(Cl)=CC(C(F)(F)F)=C1 ZQXCQTAELHSNAT-UHFFFAOYSA-N 0.000 abstract 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To remove an adhesive film on a sidewall of a resist and the resist through a dry method using no solution by successively making fluorine radicals, oxygen radicals and chlorine radicals act on the resist in their order, the adhesive film of which is formed onto the sidewall after etching. CONSTITUTION:The mixed gas of Freon and oxygen is introduced into a discharge tube 49, pressure is kept at 0. 2Torr, microwaves are applied from a microwave power 50, and microwave discharge is generated. Fluorine radicals generated are fed into a vacuum vessel 41. Ni-trogen trifluoride is introduced into the discharge tube 49, pressure is kept at 0.2Torr, and microwaves are applied while steam is induced from a gas introducing tube 46. Lastly, chlorine gas is induced into the discharge tube 49, pressure is kept at 0.2Torr, microwaves are applied, and chlorine radicals generated are introduced into the vacuum vessel 41. When a sample 45 is extracted and observed by SEM, an adhesive film on a sidewall is removed completely.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62242660A JPS6486521A (en) | 1987-09-29 | 1987-09-29 | Dry etching |
| KR1019880011117A KR920007449B1 (en) | 1987-08-28 | 1988-08-29 | Surface treatment method and there apparatus of semiconductor device manufacturing process |
| EP88114049A EP0305946B1 (en) | 1987-08-28 | 1988-08-29 | Method for removing organic and/or inorganic films by dry plasma ashing |
| DE3855636T DE3855636T2 (en) | 1987-08-28 | 1988-08-29 | Plasma stripping process for organic and inorganic layers |
| US07/996,864 US5298112A (en) | 1987-08-28 | 1992-12-15 | Method for removing composite attached to material by dry etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62242660A JPS6486521A (en) | 1987-09-29 | 1987-09-29 | Dry etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6486521A true JPS6486521A (en) | 1989-03-31 |
Family
ID=17092345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62242660A Pending JPS6486521A (en) | 1987-08-28 | 1987-09-29 | Dry etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6486521A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0240915A (en) * | 1988-07-29 | 1990-02-09 | Nippon Telegr & Teleph Corp <Ntt> | Formation of patterned metal layer |
| WO2007058284A1 (en) * | 2005-11-18 | 2007-05-24 | Mitsubishi Gas Chemical Company, Inc. | Wet etching method and wet etching apparatus |
| JP2017085161A (en) * | 2012-05-23 | 2017-05-18 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
-
1987
- 1987-09-29 JP JP62242660A patent/JPS6486521A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0240915A (en) * | 1988-07-29 | 1990-02-09 | Nippon Telegr & Teleph Corp <Ntt> | Formation of patterned metal layer |
| WO2007058284A1 (en) * | 2005-11-18 | 2007-05-24 | Mitsubishi Gas Chemical Company, Inc. | Wet etching method and wet etching apparatus |
| JP5024048B2 (en) * | 2005-11-18 | 2012-09-12 | 三菱瓦斯化学株式会社 | Wet etching method and wet etching apparatus |
| JP2017085161A (en) * | 2012-05-23 | 2017-05-18 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
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