JPS648657A - Supplementary semiconductor integrated circuit device - Google Patents

Supplementary semiconductor integrated circuit device

Info

Publication number
JPS648657A
JPS648657A JP62164324A JP16432487A JPS648657A JP S648657 A JPS648657 A JP S648657A JP 62164324 A JP62164324 A JP 62164324A JP 16432487 A JP16432487 A JP 16432487A JP S648657 A JPS648657 A JP S648657A
Authority
JP
Japan
Prior art keywords
power supply
gnd
wiring
polysilicon
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62164324A
Other languages
English (en)
Inventor
Akira Yamada
Tsunenori Umeki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62164324A priority Critical patent/JPS648657A/ja
Priority to US07/213,105 priority patent/US4868627A/en
Publication of JPS648657A publication Critical patent/JPS648657A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
    • H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP62164324A 1987-06-30 1987-06-30 Supplementary semiconductor integrated circuit device Pending JPS648657A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62164324A JPS648657A (en) 1987-06-30 1987-06-30 Supplementary semiconductor integrated circuit device
US07/213,105 US4868627A (en) 1987-06-30 1988-06-28 Complementary semiconductor integrated circuit device capable of absorbing noise

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62164324A JPS648657A (en) 1987-06-30 1987-06-30 Supplementary semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS648657A true JPS648657A (en) 1989-01-12

Family

ID=15790997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62164324A Pending JPS648657A (en) 1987-06-30 1987-06-30 Supplementary semiconductor integrated circuit device

Country Status (2)

Country Link
US (1) US4868627A (ja)
JP (1) JPS648657A (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2685203B2 (ja) * 1988-02-22 1997-12-03 富士通株式会社 遅延回路
JPH03283564A (ja) * 1990-03-30 1991-12-13 Nec Corp 相補型半導体集積回路装置
JP2621612B2 (ja) * 1990-08-11 1997-06-18 日本電気株式会社 半導体集積回路
US5041741A (en) * 1990-09-14 1991-08-20 Ncr Corporation Transient immune input buffer
JP3160586B2 (ja) * 1999-04-27 2001-04-25 松下電子工業株式会社 Ｃｍｏｓインバータ及びそれを用いたスタンダードセル
US6674108B2 (en) * 2000-12-20 2004-01-06 Honeywell International Inc. Gate length control for semiconductor chip design

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60161655A (ja) * 1984-02-01 1985-08-23 Hitachi Ltd 半導体装置
JPS61283157A (ja) * 1985-06-07 1986-12-13 Nec Corp Ｃｍｏｓ半導体集積回路装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4168442A (en) * 1975-07-18 1979-09-18 Tokyo Shibaura Electric Co., Ltd. CMOS FET device with abnormal current flow prevention
JPS6153765A (ja) * 1984-08-23 1986-03-17 Fuji Photo Film Co Ltd 固体撮像デバイス

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60161655A (ja) * 1984-02-01 1985-08-23 Hitachi Ltd 半導体装置
JPS61283157A (ja) * 1985-06-07 1986-12-13 Nec Corp Ｃｍｏｓ半導体集積回路装置

Also Published As

Publication number Publication date
US4868627A (en) 1989-09-19

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