JPS648667A - Manufacture of reader - Google Patents

Manufacture of reader

Info

Publication number
JPS648667A
JPS648667A JP62164727A JP16472787A JPS648667A JP S648667 A JPS648667 A JP S648667A JP 62164727 A JP62164727 A JP 62164727A JP 16472787 A JP16472787 A JP 16472787A JP S648667 A JPS648667 A JP S648667A
Authority
JP
Japan
Prior art keywords
electrodes
layer
silicon oxide
silicon nitride
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62164727A
Other languages
Japanese (ja)
Inventor
Hirotaka Arita
Yasuo Nishiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP62164727A priority Critical patent/JPS648667A/en
Publication of JPS648667A publication Critical patent/JPS648667A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To enhance the bondability of a protective layer formed on a photoelec tric converter with high hardness, and to stably read out for a long term by forming the protective layer by sequentially laminating at least a silicon oxide layer and a silicon nitride layer, and forming the silicon oxide layer by a plasma CVD method and the silicon nitride layer by a sputtering method. CONSTITUTION:A common electrode 13 formed by depositing Cr on a substrate 11, and a photoelectric converter 14 made of amorphous silicon is formed there on. Further, transparent electrodes 15 made of ITO are formed thereon corre sponding to individual converters 14. Moreover, Cr is so deposited as to cover part of the electrodes 15, and then photoetched. Thus, leading electrodes 16 made of Cr are individually connected to elements, and then light passage holes 17 common for the electrode 13, The converter 14 and the electrodes 15 are individually formed by photoetching. An uppermost protective layer 18 is formed by sequentially laminating a silicon oxide layer 18 formed by a plasma CVD method and a silicon nitride layer 18b formed by a sputtering method.
JP62164727A 1987-06-30 1987-06-30 Manufacture of reader Pending JPS648667A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62164727A JPS648667A (en) 1987-06-30 1987-06-30 Manufacture of reader

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62164727A JPS648667A (en) 1987-06-30 1987-06-30 Manufacture of reader

Publications (1)

Publication Number Publication Date
JPS648667A true JPS648667A (en) 1989-01-12

Family

ID=15798749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62164727A Pending JPS648667A (en) 1987-06-30 1987-06-30 Manufacture of reader

Country Status (1)

Country Link
JP (1) JPS648667A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001048830A1 (en) * 1999-12-24 2001-07-05 Koninklijke Philips Electronics N.V. ELECTRO-OPTICAL DEVICE HAVING AN ITO LAYER, A SiN LAYER AND AN INTERMEDIATE SILICON OXIDE LAYER
JP2011071481A (en) * 2009-08-28 2011-04-07 Fujifilm Corp Solid-state imaging device, process of making solid-state imaging device, digital still camera, digital video camera, mobile phone, and endoscope

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001048830A1 (en) * 1999-12-24 2001-07-05 Koninklijke Philips Electronics N.V. ELECTRO-OPTICAL DEVICE HAVING AN ITO LAYER, A SiN LAYER AND AN INTERMEDIATE SILICON OXIDE LAYER
JP2011071481A (en) * 2009-08-28 2011-04-07 Fujifilm Corp Solid-state imaging device, process of making solid-state imaging device, digital still camera, digital video camera, mobile phone, and endoscope
US8803211B2 (en) 2009-08-28 2014-08-12 Fujifilm Corporation Solid-state imaging device, process of making solid state imaging device, digital still camera, digital video camera, mobile phone, and endoscope

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