JPS6487596A - Diamond vapor synthesis device - Google Patents

Abstract

PURPOSE:To form a diamond film on a large-area substrate without requiring a heater by converting a gaseous raw material to a plasma state by the microwaves introduced through the dome-shaped window of a specifically provided microwave waveguide into a plasma generating chamber. CONSTITUTION:An isolator 2, a power monitor 3 and a tuner 4 are successively provided to a microwave power supply device 1 and the waveguide 5 is disposed by connecting the same thereto. An antenna 8 is imposed on a stage 7 in said waveguide and the dome-shaped microwave window 9 is provided to the upper part thereof by holding the flat circumferential edge part thereof to the waveguide 5. A substrate 13 such as Si wafer is then imposed on a substrate susceptor 12 in such a manner that the center of the substrate is positioned right above the antenna 8 in a vacuum vessel 11 of the plasma generating chamber formed in the upper part of a housing 10 provided above the above-mentioned window in a manner as to hermetically seal the juncture thereof. After the inside of the vessel 11 is reduced in pressure, the gaseous raw material is introduced into the vessel from a gas introducing port 19 and the microwaves are generated by turning on the switch of the power supply device 1. The direction of the microwaves is changed by the antenna 8 and the microwaves are uniformly diffused through the window 9 to convert the gaseous raw material introduced into the vessel 11 to the plasma state by which the diamond film is formed on the substrate 13.