JPS6489355A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6489355A JPS6489355A JP62247184A JP24718487A JPS6489355A JP S6489355 A JPS6489355 A JP S6489355A JP 62247184 A JP62247184 A JP 62247184A JP 24718487 A JP24718487 A JP 24718487A JP S6489355 A JPS6489355 A JP S6489355A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cracking
- insulator
- metal layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
Landscapes
- Bipolar Transistors (AREA)
- Die Bonding (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
PURPOSE:To improve thermal characteristic and to prevent a semiconductor device from cracking by isolating heat generating sections of adjacent semiconductor elements, and forming a metal layer on a substrate. CONSTITUTION:After an emitter 2, a base 3 and a collector 4 are formed on a substrate 6, an insulating tape 5 is adhered on a semiconductor element 1. Then, the substrate 6 is reduced in thickness by chemical and mechanical treatment method from the side of the substrate 6. Then, the heat generating section 7 of the element 1 is isolated from that of its adjacent element 1. Thereafter, an insulator 8 is buried in a recess generated in the isolating step, thereby flattening the surface of the substrate. Subsequently, after a metal layer 9 is formed on the whole substrate, the tape 5 is separated, and the insulator 8 is then removed. Thus, the thermal balance with heat dissipation is improved, thereby improving thermal characteristic. Even if the size of a semiconductor element is increased, it can prevent the element from cracking.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62247184A JPS6489355A (en) | 1987-09-29 | 1987-09-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62247184A JPS6489355A (en) | 1987-09-29 | 1987-09-29 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6489355A true JPS6489355A (en) | 1989-04-03 |
Family
ID=17159689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62247184A Pending JPS6489355A (en) | 1987-09-29 | 1987-09-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6489355A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05234972A (en) * | 1992-02-24 | 1993-09-10 | Nec Corp | Manufacture of semiconductor device |
-
1987
- 1987-09-29 JP JP62247184A patent/JPS6489355A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05234972A (en) * | 1992-02-24 | 1993-09-10 | Nec Corp | Manufacture of semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3574080D1 (en) | Silicon semiconductor substrate with an insulating layer embedded therein and method for forming the same | |
| JPS55163860A (en) | Manufacture of semiconductor device | |
| JPS56115525A (en) | Manufacture of semiconductor device | |
| JPS57176746A (en) | Semiconductor integrated circuit and manufacture thereof | |
| JPS54155770A (en) | Manufacture of semiconductor device | |
| JPS54589A (en) | Burying method of insulator | |
| US3454835A (en) | Multiple semiconductor device | |
| EP0406025A3 (en) | Method for fabricating a semiconductor device in which an insulating layer thereof has a uniform thickness | |
| TW345743B (en) | Method for forming side contact of semiconductor device | |
| JPH09509792A (en) | Method for manufacturing semiconductor device in which semiconductor element is formed in layer of semiconductor material adhered on supporting wafer | |
| JPS6489355A (en) | Manufacture of semiconductor device | |
| MY121209A (en) | Semiconductor device and production thereof. | |
| JPS6442135A (en) | Semiconductor device | |
| JPS6454734A (en) | Semiconductor device | |
| GB1531394A (en) | Semiconductor components | |
| JPS5515231A (en) | Manufacturing method of semiconductor device | |
| JPS57103333A (en) | Manufacture of semiconductor device | |
| TW350129B (en) | Manufacturing method of semiconductor formation latches the invention relates to a manufacturing method of semiconductor formation latches | |
| JPS6437036A (en) | Manufacture of semiconductor device | |
| EP0228183A3 (en) | Method for manufacturing semiconductor device | |
| JPS6421965A (en) | Mos transistor | |
| DE3782609D1 (en) | SILICON TEMPERATURE SENSOR. | |
| JPS5373086A (en) | Formation of multilayer wiring structure | |
| TH23571A (en) | "Method of manufacturing semiconductors" | |
| JPS56130920A (en) | Forming method of electrode for semiconductor device |