JPS6489367A - High breakdown strength semiconductor device - Google Patents
High breakdown strength semiconductor deviceInfo
- Publication number
- JPS6489367A JPS6489367A JP62243618A JP24361887A JPS6489367A JP S6489367 A JPS6489367 A JP S6489367A JP 62243618 A JP62243618 A JP 62243618A JP 24361887 A JP24361887 A JP 24361887A JP S6489367 A JPS6489367 A JP S6489367A
- Authority
- JP
- Japan
- Prior art keywords
- region
- breakdown strength
- semiconductor device
- high breakdown
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62243618A JPH0770714B2 (ja) | 1987-09-30 | 1987-09-30 | 高耐圧半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62243618A JPH0770714B2 (ja) | 1987-09-30 | 1987-09-30 | 高耐圧半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6489367A true JPS6489367A (en) | 1989-04-03 |
| JPH0770714B2 JPH0770714B2 (ja) | 1995-07-31 |
Family
ID=17106500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62243618A Expired - Lifetime JPH0770714B2 (ja) | 1987-09-30 | 1987-09-30 | 高耐圧半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0770714B2 (ja) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06216380A (ja) * | 1992-10-07 | 1994-08-05 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| EP0804830A4 (en) * | 1995-11-21 | 1998-04-29 | Information Storage Devices | A clocked high voltage switch |
| US20120018805A1 (en) * | 2010-07-20 | 2012-01-26 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
| JP2013247300A (ja) * | 2012-05-28 | 2013-12-09 | Canon Inc | 半導体装置、半導体装置の製造方法及び液体吐出装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63305562A (ja) * | 1987-06-05 | 1988-12-13 | Sony Corp | 半導体装置 |
-
1987
- 1987-09-30 JP JP62243618A patent/JPH0770714B2/ja not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63305562A (ja) * | 1987-06-05 | 1988-12-13 | Sony Corp | 半導体装置 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06216380A (ja) * | 1992-10-07 | 1994-08-05 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| EP0804830A4 (en) * | 1995-11-21 | 1998-04-29 | Information Storage Devices | A clocked high voltage switch |
| US20120018805A1 (en) * | 2010-07-20 | 2012-01-26 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
| JP2012028378A (ja) * | 2010-07-20 | 2012-02-09 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
| US9070769B2 (en) | 2010-07-20 | 2015-06-30 | Kabushiki Kaisha Toshiba | Semiconductor device with a depletion channel and method of manufacturing the same |
| JP2013247300A (ja) * | 2012-05-28 | 2013-12-09 | Canon Inc | 半導体装置、半導体装置の製造方法及び液体吐出装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0770714B2 (ja) | 1995-07-31 |
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