JPS6489372A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6489372A JPS6489372A JP62245452A JP24545287A JPS6489372A JP S6489372 A JPS6489372 A JP S6489372A JP 62245452 A JP62245452 A JP 62245452A JP 24545287 A JP24545287 A JP 24545287A JP S6489372 A JPS6489372 A JP S6489372A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- gate electrode
- electrodes
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000002131 composite material Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To suppress a leakage current and to shorten an erasing time by so forming a first insulating film made of a composite film between a control electrode and a floating gate electrode that the end of the first film of a drain arranging direction side is retreated from both ends of a floating gate electrode toward its inside. CONSTITUTION:A floating gate electrode 43 is formed through a gate insulating film 35 on a channel region between a source region 46 and a drain region 47 on a P-type silicon substrate 31, and a control gate electrode 44 is formed through an insulating film on the electrode 43. The insulating film between the electrodes 43 and 44 is formed of a first insulating film made of a composite film including a silicon nitride film 39 and second insulating films formed at both sides of the first film, and the first film is so formed as to retreat at the ends of source, drain arranging direction side from both ends of the electrodes 43 toward its inside. Thus, a leakage current between the gate electrodes can be sufficiently suppressed, and a semiconductor device which has sufficiently good ultraviolet ray erasing characteristic can be formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62245452A JPS6489372A (en) | 1987-09-29 | 1987-09-29 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62245452A JPS6489372A (en) | 1987-09-29 | 1987-09-29 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6489372A true JPS6489372A (en) | 1989-04-03 |
Family
ID=17133874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62245452A Pending JPS6489372A (en) | 1987-09-29 | 1987-09-29 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6489372A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5291047A (en) * | 1990-10-12 | 1994-03-01 | Nec Corporation | Floating gate type electrically programmable read only memory cell with variable threshold level in erased state |
| JPH0677438A (en) * | 1990-09-22 | 1994-03-18 | Samsung Electron Co Ltd | Manufacture and structure for nonvolatile semiconductor memory device provided with storage cell array and with peripheral circuit |
| US7199425B2 (en) | 2003-05-26 | 2007-04-03 | Kabushiki Kaisha Toshiba | Non-volatile memory cells |
| JP2008153540A (en) * | 2006-12-19 | 2008-07-03 | Toshiba Corp | Nonvolatile semiconductor memory |
-
1987
- 1987-09-29 JP JP62245452A patent/JPS6489372A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0677438A (en) * | 1990-09-22 | 1994-03-18 | Samsung Electron Co Ltd | Manufacture and structure for nonvolatile semiconductor memory device provided with storage cell array and with peripheral circuit |
| US5291047A (en) * | 1990-10-12 | 1994-03-01 | Nec Corporation | Floating gate type electrically programmable read only memory cell with variable threshold level in erased state |
| US7199425B2 (en) | 2003-05-26 | 2007-04-03 | Kabushiki Kaisha Toshiba | Non-volatile memory cells |
| US7391076B2 (en) | 2003-05-26 | 2008-06-24 | Kabushiki Kaisha Toshiba | Non-volatile memory cells |
| JP2008153540A (en) * | 2006-12-19 | 2008-07-03 | Toshiba Corp | Nonvolatile semiconductor memory |
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