JPS649657A - Junction transistor - Google Patents

Junction transistor

Info

Publication number
JPS649657A
JPS649657A JP62165699A JP16569987A JPS649657A JP S649657 A JPS649657 A JP S649657A JP 62165699 A JP62165699 A JP 62165699A JP 16569987 A JP16569987 A JP 16569987A JP S649657 A JPS649657 A JP S649657A
Authority
JP
Japan
Prior art keywords
layer
type
collector
polycrystalline layer
low resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62165699A
Other languages
Japanese (ja)
Inventor
Kunikazu Ota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62165699A priority Critical patent/JPS649657A/en
Publication of JPS649657A publication Critical patent/JPS649657A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the junction capacity between a collector and a substrate for improving the high-frequency characteristics of a bipolar IC transistor by a method wherein electrodes are formed in two thin layers formed by proper openings in the third low resistance polycrystalline layer and the third single crystal layer. CONSTITUTION:One layer of a polycrystalline layer 6 is selectively oxidized to form an oxide film 7. During this process, the N<+> type low resistance polycrystalline layer 6 is used for a wiring of a collector. First, an N type epitaxial layer 8 is formed. At this time, the part above the polycrystalline layer 6 is formed into another polycrystalline layer 8'. Oxide film regions 9 are formed by selective oxidation. Second, N type impurity is diffused in the polycrystalline layer 8' to form an N type low resistance layer 8'. A P type base diffused layer 10, an N type emitter diffused layer 11 and an insulating film 12 are formed and then openings are made respectively 10 the layers 10, 11 and 12 as an emitter, a base and a collector to be formed into electrodes 13-15. In such a constitution, the junction capacity between the collector and the substrate can be notably reduced resultantly improving the high-frequency characteristics.
JP62165699A 1987-07-01 1987-07-01 Junction transistor Pending JPS649657A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62165699A JPS649657A (en) 1987-07-01 1987-07-01 Junction transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62165699A JPS649657A (en) 1987-07-01 1987-07-01 Junction transistor

Publications (1)

Publication Number Publication Date
JPS649657A true JPS649657A (en) 1989-01-12

Family

ID=15817369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62165699A Pending JPS649657A (en) 1987-07-01 1987-07-01 Junction transistor

Country Status (1)

Country Link
JP (1) JPS649657A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02278736A (en) * 1989-04-19 1990-11-15 Nec Corp semiconductor equipment
US5216276A (en) * 1989-12-08 1993-06-01 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device having high matching degree and high integration density

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6189667A (en) * 1984-10-09 1986-05-07 Matsushita Electric Ind Co Ltd Manufacturing method of semiconductor device
JPS61114571A (en) * 1984-11-09 1986-06-02 Fujitsu Ltd Manufacture of semiconductor device
JPS6286860A (en) * 1985-10-08 1987-04-21 モトロ−ラ・インコ−ポレ−テツド Polycrystalline side wall contact transistor and manufactureof the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6189667A (en) * 1984-10-09 1986-05-07 Matsushita Electric Ind Co Ltd Manufacturing method of semiconductor device
JPS61114571A (en) * 1984-11-09 1986-06-02 Fujitsu Ltd Manufacture of semiconductor device
JPS6286860A (en) * 1985-10-08 1987-04-21 モトロ−ラ・インコ−ポレ−テツド Polycrystalline side wall contact transistor and manufactureof the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02278736A (en) * 1989-04-19 1990-11-15 Nec Corp semiconductor equipment
US5216276A (en) * 1989-12-08 1993-06-01 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device having high matching degree and high integration density

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