JPWO2024143473A5 - - Google Patents

Claims (17)

A decomposition inhibitor for a transition metal oxidizing agent,
A decomposition inhibitor comprising a compound represented by the following formula (1), wherein A in the following formula (1) has a hydrophilic group in addition to X:
A-(X) _n (1)
A: aromatic group, group having a carbon-carbon double bond, or group having a carbon-carbon triple bond; X: electron-donating group; n: integer; 2. The decomposition inhibitor according to claim 1, wherein in said formula (1), A is an aromatic group and n is 1 or 2. 3. The decomposition inhibitor according to claim 1, wherein in the formula (1), X is an amino group or an alkoxy group. (delete) The decomposition inhibitor according to claim 1 , wherein the hydrophilic group is a carboxyl group. The decomposition inhibitor according to any one of claims 1 to 3 and 5, which is added to a semiconductor processing solution and used for reusing the semiconductor processing solution. The decomposition inhibitor according to any one of claims 1 to 3, 5, and 6, wherein the transition metal comprises at least one metal selected from the group consisting of Ru, Rh, Ti, Ta, Co, Cr, Hf, Os, Pt, Ni, Mn, Cu, Zr, La, Mo, and W. The decomposition inhibitor for an oxidizing agent for a transition metal according to any one of claims 1 to 3 and 5 to 7, wherein the transition metal is Ru. A semiconductor processing solution comprising the decomposition inhibitor for a transition metal oxidizing agent according to any one of claims 1 to 3 and 5 to 8, and an oxidizing agent for a transition metal. 10. The semiconductor processing solution according to claim 9, wherein the concentration of the decomposition inhibitor is 1 ppm by mass or more and 10,000 ppm by mass or less based on the total mass of the semiconductor processing solution. 11. The semiconductor processing solution according to claim 9, wherein the transition metal oxidizing agent is at least one halogen oxygen acid ion selected from the group consisting of a hypobromite ion, a hypochlorite ion, and a periodate ion, and the total concentration of all the transition metal oxidizing agents is 50 ppm by mass or more and 35% by mass or less, based on the total mass of the semiconductor processing solution. 12. The semiconductor processing solution according to claim 11, wherein the oxidizing agent for transition metals is a hypobromite ion and a hypochlorite ion. The semiconductor processing solution according to any one of claims 9 to 12, further comprising a transition metal oxidant. The semiconductor processing solution according to any one of claims 9 to 13, further comprising a filtration lubricant. 15. The semiconductor processing solution according to claim 14, wherein the filter lubricant is an onium ion. A method for etching a semiconductor wafer, comprising contacting a semiconductor wafer containing a transition metal with the semiconductor processing solution according to any one of claims 9 to 15, and etching the transition metal. A method for manufacturing a semiconductor device, comprising the etching method according to claim 16 in a process.