JPWO2024257580A5 - - Google Patents
Info
- Publication number
- JPWO2024257580A5 JPWO2024257580A5 JP2025527614A JP2025527614A JPWO2024257580A5 JP WO2024257580 A5 JPWO2024257580 A5 JP WO2024257580A5 JP 2025527614 A JP2025527614 A JP 2025527614A JP 2025527614 A JP2025527614 A JP 2025527614A JP WO2024257580 A5 JPWO2024257580 A5 JP WO2024257580A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- substrate
- carbide epitaxial
- epitaxial layer
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Claims (7)
前記第１主面において前記炭化珪素基板に接する第１炭化珪素エピタキシャル層と、
前記第２主面において前記炭化珪素基板に接する第２炭化珪素エピタキシャル層と、を備え、
前記第１炭化珪素エピタキシャル層の厚みは、前記第２炭化珪素エピタキシャル層の厚みよりも大きく、
平面視において、前記第２炭化珪素エピタキシャル層の中心正方領域における凹みの面密度は、５ｍｍ-2以下であり、
前記中心正方領域の一辺の長さは、５ｍｍであり、
平面視において、前記凹みの最大幅は１０μｍ以上１００μｍ以下である、炭化珪素エピタキシャル基板。 A silicon carbide substrate having a first main surface and a second main surface opposite to the first main surface,
A first silicon carbide epitaxial layer in contact with the silicon carbide substrate on the first main surface,
The second main surface comprises a second silicon carbide epitaxial layer in contact with the silicon carbide substrate,
The thickness of the first silicon carbide epitaxial layer is greater than the thickness of the second silicon carbide epitaxial layer.
In a plan view, the surface density of depressions in the central square region of the second silicon carbide epitaxial layer is 5 mm² or less.
The length of one side of the aforementioned central square region is 5 mm.
A silicon carbide epitaxial substrate in which, in a plan view, the maximum width of the recess is 10 μm or more and 100 μm or less.
前記第１炭化珪素エピタキシャル層上に電極を形成する工程と、を備えた、炭化珪素半導体装置の製造方法。 A step of preparing a silicon carbide epitaxial substrate according to claim 1 or claim 2 ,
A method for manufacturing a silicon carbide semiconductor device, comprising the step of forming an electrode on the first silicon carbide epitaxial layer.
前記炭化珪素基板が前記炭化珪素コーティング層と接するように前記炭化珪素基板を前記サセプタに配置する工程と、
前記炭化珪素基板上に炭化珪素エピタキシャル層を形成する工程と、を備えた、炭化珪素エピタキシャル基板の製造方法。 A step of forming a silicon carbide coating layer on a susceptor without a silicon carbide substrate being placed,
A step of placing the silicon carbide substrate in the susceptor such that the silicon carbide substrate is in contact with the silicon carbide coating layer,
A method for manufacturing a silicon carbide epitaxial substrate, comprising the step of forming a silicon carbide epitaxial layer on the silicon carbide substrate.
前記炭化珪素コーティング層の厚みは、前記炭化珪素粒子の高さよりも大きい、請求項６に記載の炭化珪素エピタキシャル基板の製造方法。 Silicon carbide particles are present on the susceptor,
The method for manufacturing a silicon carbide epitaxial substrate according to claim 6, wherein the thickness of the silicon carbide coating layer is greater than the height of the silicon carbide particles.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023099394 | 2023-06-16 | ||
| PCT/JP2024/019082 WO2024257580A1 (en) | 2023-06-16 | 2024-05-23 | Silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and method for manufacturing silicon carbide epitaxial substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024257580A1 JPWO2024257580A1 (en) | 2024-12-19 |
| JPWO2024257580A5 true JPWO2024257580A5 (en) | 2026-03-17 |
Family
ID=93851781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025527614A Pending JPWO2024257580A1 (en) | 2023-06-16 | 2024-05-23 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2024257580A1 (en) |
| WO (1) | WO2024257580A1 (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61186288A (en) * | 1985-02-14 | 1986-08-19 | Nec Corp | Apparatus for vapor-phase epitaxial growth of silicon carbide compound semiconductor |
| JP6481582B2 (en) * | 2015-10-13 | 2019-03-13 | 住友電気工業株式会社 | Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device |
| JP6685258B2 (en) * | 2017-05-01 | 2020-04-22 | 三菱電機株式会社 | Silicon carbide epitaxial growth apparatus, silicon carbide epitaxial wafer manufacturing method, and silicon carbide semiconductor device manufacturing method |
| WO2020105211A1 (en) * | 2018-11-20 | 2020-05-28 | 住友電気工業株式会社 | Device for producing silicon carbide epitaxial substrate |
| JP7585776B2 (en) * | 2020-12-25 | 2024-11-19 | 住友電気工業株式会社 | Susceptor, method for growing silicon carbide epitaxial layer, and method for manufacturing silicon carbide epitaxial substrate |
| US12516443B2 (en) * | 2021-02-15 | 2026-01-06 | Sumitomo Electric Industries, Ltd. | Silicon carbide epitaxial substrate |
-
2024
- 2024-05-23 JP JP2025527614A patent/JPWO2024257580A1/ja active Pending
- 2024-05-23 WO PCT/JP2024/019082 patent/WO2024257580A1/en not_active Ceased
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