KR101972730B1 - 진공 처리 장치 - Google Patents
진공 처리 장치 Download PDFInfo
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- KR101972730B1 KR101972730B1 KR1020187025236A KR20187025236A KR101972730B1 KR 101972730 B1 KR101972730 B1 KR 101972730B1 KR 1020187025236 A KR1020187025236 A KR 1020187025236A KR 20187025236 A KR20187025236 A KR 20187025236A KR 101972730 B1 KR101972730 B1 KR 101972730B1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
- H10P72/3202—Mechanical details, e.g. rollers or belts
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
- H10P72/3222—Loading to or unloading from a conveyor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3306—Horizontal transfer of a single workpiece
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3314—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
도 2 는 본 발명의 진공 처리 장치를 설명하기 위한 도 (2)
도 3 은 본 발명의 진공 처리 장치를 설명하기 위한 도 (3)
도 4 는 본 발명의 진공 처리 장치를 설명하기 위한 도 (4)
도 5 는 본 발명의 진공 처리 장치를 설명하기 위한 도 (5)
도 6 은 본 발명의 진공 처리 장치를 설명하기 위한 도 (6)
도 7 은 본 발명의 진공 처리 장치를 설명하기 위한 도 (7)
도 8 은 본 발명의 진공 처리 장치를 설명하기 위한 도 (8)
도 9 는 본 발명의 진공 처리 장치를 설명하기 위한 도 (9)
도 10 은 본 발명의 진공 처리 장치를 설명하기 위한 도 (10)
도 11 은 본 발명의 진공 처리 장치를 설명하기 위한 도 (11)
도 12 는 처리 대상물과 기판 유지 장치의 위치 관계를 설명하기 위한 도
도 13 은 본 발명의 진공 처리 장치의 다른 예 (1)
도 14 는 본 발명의 진공 처리 장치의 다른 예 (2)
도 15 는 요동형의 훅을 설명하기 위한 도
11 : 처리 대상물
12 : 진공조
12a : 처리 영역
12b : 승강 영역
14 : 승강축
15 : 승강판
16 : 승강 장치
17 : 승강 구멍
21 : 승강력 발생 장치
22 : 대좌판
23 : 벨로즈
24 : 창 개방부
25 : 제어 장치
26 : 개구
27 : 기판 유지 장치
28 : 핀
29 : 내부 밀폐 링
30 : 반출입실
31 : 덮개부
32 : 외부 밀폐 링
33 : 가압 장치
35 : 상방측 이동 장치
36 : 하방측 이동 장치
37 : 수수 장치
37a : 상방측 수수 장치
37b : 하방측 수수 장치
39 : 상하 간 수수 장치
40 : 상방측 처리 장치
41 : 가스 도입 장치
42 : 상방측 슬라이더
43 : 하방측 슬라이더
44, 67 : 상방측 훅
45, 67 : 하방측 훅
46 : 스퍼터링 타겟
47 : 백킹 플레이트
48 : 롤러
50 : 하방측 처리 장치
Claims (7)
- 처리 대상물이 처리면을 노출시켜 배치되는 기판 유지 장치가 반출입되는 진공조와,
승강판 상에 배치된 상기 기판 유지 장치를 상기 진공조 내에서 승강 이동시키는 승강 장치와,
상기 진공조 내의 상방측에서 상기 기판 유지 장치를 횡 방향으로 이동시키는 상방측 이동 장치와,
상기 진공조 내의 하방측에서 상기 기판 유지 장치를 횡 방향으로 이동시키는 하방측 이동 장치와,
상기 승강판과, 상기 상방측 이동 장치 및 상기 하방측 이동 장치 사이에서 상기 기판 유지 장치를 수수하는 수수 장치
를 갖고,
상기 상방측 이동 장치에 의해 이동되는 상기 기판 유지 장치에 배치된 상기 처리 대상물은 상방측 처리 장치에 의해 진공 처리가 되고, 상기 하방측 이동 장치에 의해 이동되는 상기 기판 유지 장치에 배치된 상기 처리 대상물은 하방측 처리 장치에 의해 진공 처리가 되고,
상기 승강판이 상하 이동하는 범위의 상부에는, 상기 진공조에 형성된 개구와,
상기 개구를 덮어 반출입실을 형성시키는 덮개 부재가 설치되고,
상기 진공조의 내부와 상기 반출입실의 내부는, 각각 진공 분위기를 형성할 수 있게 되어 있고,
상기 승강판이 상기 승강 장치에 의해 상기 진공조 내에서 상승되어 상기 승강판에 의해 상기 개구를 폐색할 수 있게 된, 진공 처리 장치. - 제 1 항에 있어서,
상기 개구가 상기 승강판으로 폐색된 상태에서는, 상기 진공조에 진공 분위기가 형성된 상태를 유지하면서 상기 반출입실에 기체를 도입할 수 있도록 된, 진공 처리 장치. - 제 2 항에 있어서,
상기 반출입실을 진공 배기하는 진공 배기 장치가 설치된, 진공 처리 장치. - 제 1 항에 있어서,
상기 상방측 이동 장치와 상기 하방측 이동 장치 사이에서, 상기 기판 유지 장치를 수수하는 상하 간 수수 장치가 설치된, 진공 처리 장치. - 제 1 항에 있어서,
상기 기판 유지 장치에는 핀이 설치되어 있고,
상기 수수 장치는, 상기 핀과 걸어맞춤 가능한 훅을 갖는, 진공 처리 장치. - 제 5 항에 있어서,
상기 훅은, 상방 또는 하방 중, 어느 쪽으로 이동함으로써, 상기 핀과의 걸어맞춤이 해제되는, 진공 처리 장치. - 제 1 항에 있어서,
상기 수수 장치는, 상기 승강판과 상기 상방측 이동 장치 사이에서 상기 기판 유지 장치를 수수하는 상방측 수수 장치와,
상기 승강판과 상기 하방측 이동 장치 사이에서 상기 기판 유지 장치를 수수하는 하방측 수수 장치를 갖는, 진공 처리 장치.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016215115 | 2016-11-02 | ||
| JPJP-P-2016-215115 | 2016-11-02 | ||
| PCT/JP2017/039629 WO2018084214A1 (ja) | 2016-11-02 | 2017-11-01 | 真空処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20180102197A KR20180102197A (ko) | 2018-09-14 |
| KR101972730B1 true KR101972730B1 (ko) | 2019-04-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1020187025236A Active KR101972730B1 (ko) | 2016-11-02 | 2017-11-01 | 진공 처리 장치 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10612130B2 (ko) |
| JP (1) | JP6336231B1 (ko) |
| KR (1) | KR101972730B1 (ko) |
| CN (1) | CN108884561B (ko) |
| TW (1) | TWI662644B (ko) |
| WO (1) | WO2018084214A1 (ko) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020001893A (ja) * | 2018-06-28 | 2020-01-09 | 株式会社アルバック | 真空処理装置 |
| JP6697118B2 (ja) * | 2018-08-27 | 2020-05-20 | 株式会社アルバック | 成膜装置及び成膜方法並びに太陽電池の製造方法 |
| KR20210112326A (ko) * | 2019-01-08 | 2021-09-14 | 가부시키가이샤 아루박 | 진공 처리장치 |
| JP6799193B1 (ja) * | 2020-07-29 | 2020-12-09 | 株式会社アルバック | 搬送駆動機構 |
| WO2022079311A1 (de) * | 2020-10-16 | 2022-04-21 | Fhr Anlagenbau Gmbh | Verfahren und vorrichtung zum beschichten von einzelnen substraten in einer doppelzügigen/doppelstöckigen inline-vakuum-beschichtungsanlage |
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| RU2425174C2 (ru) | 2006-10-27 | 2011-07-27 | Улвак, Инк. | Способ изготовления и устройство для изготовления плазменной индикаторной панели |
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| KR101100366B1 (ko) * | 2009-04-24 | 2011-12-30 | 주식회사 코리아 인스트루먼트 | 후막 증착용 마그네트론 스퍼터링 장치 |
| KR101744372B1 (ko) * | 2011-01-20 | 2017-06-07 | 도쿄엘렉트론가부시키가이샤 | 진공 처리 장치 |
| KR20130049080A (ko) * | 2011-11-03 | 2013-05-13 | 삼성디스플레이 주식회사 | 회전식 박막 증착 장치 및 그것을 이용한 박막 증착 방법 |
| JP2013131542A (ja) | 2011-12-20 | 2013-07-04 | Ulvac Japan Ltd | インライン式成膜装置 |
| JP6419635B2 (ja) * | 2014-04-23 | 2018-11-07 | 株式会社アルバック | 保持装置、真空処理装置 |
| JP6009513B2 (ja) * | 2014-09-02 | 2016-10-19 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
| WO2017104826A1 (ja) * | 2015-12-17 | 2017-06-22 | 株式会社アルバック | 真空処理装置 |
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2017
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- 2017-11-01 KR KR1020187025236A patent/KR101972730B1/ko active Active
- 2017-11-01 WO PCT/JP2017/039629 patent/WO2018084214A1/ja not_active Ceased
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- 2017-11-02 TW TW106137868A patent/TWI662644B/zh active
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2019
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005171369A (ja) | 2003-12-15 | 2005-06-30 | Canon Inc | 基板保持機構 |
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| CN108884561A (zh) | 2018-11-23 |
| CN108884561B (zh) | 2019-08-06 |
| JPWO2018084214A1 (ja) | 2018-11-01 |
| US10612130B2 (en) | 2020-04-07 |
| TW201820516A (zh) | 2018-06-01 |
| US20190233224A1 (en) | 2019-08-01 |
| JP6336231B1 (ja) | 2018-06-06 |
| WO2018084214A1 (ja) | 2018-05-11 |
| TWI662644B (zh) | 2019-06-11 |
| KR20180102197A (ko) | 2018-09-14 |
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