KR20170116077A - 마그네트론 스퍼터링 장치용 회전식 캐소드 유닛 - Google Patents
마그네트론 스퍼터링 장치용 회전식 캐소드 유닛 Download PDFInfo
- Publication number
- KR20170116077A KR20170116077A KR1020177025056A KR20177025056A KR20170116077A KR 20170116077 A KR20170116077 A KR 20170116077A KR 1020177025056 A KR1020177025056 A KR 1020177025056A KR 20177025056 A KR20177025056 A KR 20177025056A KR 20170116077 A KR20170116077 A KR 20170116077A
- Authority
- KR
- South Korea
- Prior art keywords
- target
- magnet
- magnetic field
- unit
- magnetron sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
- C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/342—Hollow targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3452—Magnet distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3497—Temperature of target
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
원통형의 타겟 내에 설치되고, 자장의 수직 성분이 제로가 되는 위치를 지나는 선이 타겟의 모선을 따라 연장되어 레이스 트랙 형상으로 닫히도록 타겟 표면으로부터 누설하는 자장을 발생시키는 자석 유닛(Mu)은, 타겟의 모선 방향 양단에서 레이스 트랙의 코너부를 각각 형성하는 제1 부분(5a)과, 제1 부분으로부터 타겟의 모선 방향 안쪽에서 제1 부분에 각각 인접 배치되는 제2 부분(5b)과, 제2 부분 서로의 사이에 위치하는 제3 부분(5c)으로 나뉘어 구성한다. 제1 부분~제3 부분을 독립하여 타겟 표면에 대해 근접 이간 가능하게 진퇴시키는 이동 수단(6)을 타겟의 내부 공간에 수납한다.
Description
도 2는 구동 블록의 구성을 설명하는 단면도.
도 3은 자석 유닛을 설명하는 사시도.
도 4는 도 1의 Ⅳ-Ⅳ선에 따른 단면도이며, (a)는, 자석 유닛을 타겟에 근접시킨 상태, (b)는, 자석 유닛을 타겟으로부터 이간시킨 상태를 도시한다.
도 5는 자석 유닛을 이동시키는 이동 수단을 설명하는 확대 단면도.
Tg: 원통형의 타겟
Mu: 자석 유닛
41: 백킹 튜브
42: 타겟재
43: 자석 케이스
Ml: 자장의 수직 성분이 제로가 되는 위치를 지나는 선
Mc: 레이스 트랙(race track)의 코너부
5a: 자석 유닛의 제1 부분
5b: 자석 유닛의 제2 부분
5c: 자석 유닛의 제3 부분
6: 이동 수단
Ch: 칠러 유닛(chiller unit)(냉매 순환 수단)
47: 냉매 순환 통로의 왕로(냉매 순환 수단)
48: 냉매 순환 통로의 귀로(냉매 순환 수단)
Claims (2)
- 원통형의 타겟과, 이 타겟의 내부 공간에 배치되어 자장의 수직 성분이 제로가 되는 위치를 지나는 선이 타겟의 모선(busbar)을 따라 연장되어 레이스 트랙(race track) 형상으로 닫히도록 타겟 표면으로부터 누설하는 자장을 발생시키는 자석 유닛과, 타겟의 내부 공간에 냉매를 순환시키는 냉매 순환 수단과, 타겟을 회전 구동하는 구동 수단을 구비하는 마그네트론 스퍼터링(magnetron sputtering) 장치용 회전식 캐소드 유닛(rotary cathode unit)에 있어서,
자석 유닛은, 타겟의 모선 방향 양단에서 레이스 트랙의 코너부를 각각 형성하는 제1 부분과, 제1 부분으로부터 타겟의 모선 방향 안쪽에서 제1 부분에 각각 인접 배치되는 제2 부분과, 제2 부분 서로의 사이에 위치하는 제3 부분으로 나뉘어 구성되며, 제1 부분 및 제2 부분을 독립하여 타겟 표면에 대해 근접 이간 가능하게 진퇴시키는 이동 수단을 타겟의 내부 공간에 수납한 것을 특징으로 하는 마그네트론 스퍼터링 장치용 회전식 캐소드 유닛.
- 청구항 1에 있어서, 상기 자석 유닛의 제3 부분을 독립하여 타겟 표면에 대해 근접 이간 가능하게 진퇴시키는 이동 수단을 더 구비한 것을 특징으로 하는 마그네트론 스퍼터링 장치용 회전식 캐소드 유닛.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020207015642A KR102364799B1 (ko) | 2015-02-24 | 2016-01-08 | 마그네트론 스퍼터링 장치용 회전식 캐소드 유닛 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2015-034206 | 2015-02-24 | ||
| JP2015034206 | 2015-02-24 | ||
| PCT/JP2016/000092 WO2016136121A1 (ja) | 2015-02-24 | 2016-01-08 | マグネトロンスパッタリング装置用の回転式カソードユニット |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020207015642A Division KR102364799B1 (ko) | 2015-02-24 | 2016-01-08 | 마그네트론 스퍼터링 장치용 회전식 캐소드 유닛 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20170116077A true KR20170116077A (ko) | 2017-10-18 |
Family
ID=56788118
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020177025056A Ceased KR20170116077A (ko) | 2015-02-24 | 2016-01-08 | 마그네트론 스퍼터링 장치용 회전식 캐소드 유닛 |
| KR1020207015642A Active KR102364799B1 (ko) | 2015-02-24 | 2016-01-08 | 마그네트론 스퍼터링 장치용 회전식 캐소드 유닛 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020207015642A Active KR102364799B1 (ko) | 2015-02-24 | 2016-01-08 | 마그네트론 스퍼터링 장치용 회전식 캐소드 유닛 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10378102B2 (ko) |
| JP (1) | JP6205520B2 (ko) |
| KR (2) | KR20170116077A (ko) |
| CN (2) | CN111500994A (ko) |
| TW (1) | TWI617686B (ko) |
| WO (1) | WO2016136121A1 (ko) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20190378700A1 (en) * | 2016-11-29 | 2019-12-12 | Soleras Advanced Coatings Bvba | A universally mountable end-block |
| KR20210041307A (ko) * | 2019-10-07 | 2021-04-15 | 주식회사 에이치앤이루자 | 스퍼터링 장치용 원통형 캐소드 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10727034B2 (en) * | 2017-08-16 | 2020-07-28 | Sputtering Components, Inc. | Magnetic force release for sputtering sources with magnetic target materials |
| CN107858653B (zh) * | 2017-10-31 | 2023-05-12 | 东莞市汇成真空科技有限公司 | 一种电弧靶升降抬头机构 |
| CN108315704B (zh) * | 2018-02-26 | 2020-03-27 | 沈阳中北真空技术有限公司 | 一种磁控溅射光学镀膜设备及镀膜方法 |
| JP7171270B2 (ja) | 2018-07-02 | 2022-11-15 | キヤノン株式会社 | 成膜装置およびそれを用いた成膜方法 |
| JP2020200520A (ja) * | 2019-06-12 | 2020-12-17 | 株式会社アルバック | 成膜装置、スパッタリングターゲット機構及び成膜方法 |
| US12191128B2 (en) | 2020-03-11 | 2025-01-07 | Intellivation Llc | Movable magnet array for magnetron sputtering |
| JP7303393B2 (ja) * | 2020-09-16 | 2023-07-04 | 株式会社アルバック | 回転式カソードユニット用の駆動ブロック |
| DE102021129521B3 (de) * | 2021-11-12 | 2023-03-30 | VON ARDENNE Asset GmbH & Co. KG | Magnetsystem, Sputtervorrichtung und Verfahren |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS559634Y2 (ko) * | 1976-02-20 | 1980-03-03 | ||
| US4356073A (en) * | 1981-02-12 | 1982-10-26 | Shatterproof Glass Corporation | Magnetron cathode sputtering apparatus |
| US6464841B1 (en) * | 1997-03-04 | 2002-10-15 | Tokyo Electron Limited | Cathode having variable magnet configuration |
| CN1196169C (zh) * | 1998-04-16 | 2005-04-06 | 贝克尔特Vds股份有限公司 | 磁控管中用于控制目标冲蚀和溅射的装置 |
| JP4437290B2 (ja) * | 2003-05-14 | 2010-03-24 | シーワイジー技術研究所株式会社 | スパッタ装置 |
| WO2006007504A1 (en) | 2004-07-01 | 2006-01-19 | Cardinal Cg Company | Cylindrical target with oscillating magnet from magnetron sputtering |
| CN1978689A (zh) | 2005-11-30 | 2007-06-13 | 宝山钢铁股份有限公司 | 低碳热轧深冲钢板及其制造方法 |
| JP4990521B2 (ja) * | 2005-12-08 | 2012-08-01 | 株式会社アルバック | マグネトロンスパッタ電極及びマグネトロンスパッタ電極を用いたスパッタリング装置 |
| US20080047831A1 (en) * | 2006-08-24 | 2008-02-28 | Hendryk Richert | Segmented/modular magnet bars for sputtering target |
| US20080296142A1 (en) * | 2007-05-29 | 2008-12-04 | Hien-Minh Huu Le | Swinging magnets to improve target utilization |
| WO2011056581A2 (en) | 2009-10-26 | 2011-05-12 | General Plasma, Inc. | Rotary magnetron magnet bar and apparatus containing the same for high target utilization |
| CN101812667B (zh) | 2010-04-19 | 2012-05-30 | 中国南玻集团股份有限公司 | 磁控溅射镀膜阴极装置 |
| JP5687045B2 (ja) | 2010-12-20 | 2015-03-18 | キヤノンアネルバ株式会社 | スパッタリング装置およびスパッタリング方法 |
| US20150187549A1 (en) * | 2012-05-31 | 2015-07-02 | Tokyo Electron Limited | Magnetron sputtering apparatus |
| JP6089983B2 (ja) * | 2012-07-18 | 2017-03-08 | 三菱マテリアル株式会社 | 円筒形スパッタリングターゲットおよびその製造方法 |
| LT2888755T (lt) * | 2012-08-24 | 2018-11-12 | Cardinal Cg Company | Dalelių pūtimo cilindriniu magnetronu aparatas |
| DE102012109424A1 (de) * | 2012-10-04 | 2014-04-10 | Von Ardenne Anlagentechnik Gmbh | Sputtermagnetron und Verfahren zur dynamischen Magnetfeldbeeinflussung |
| US9312108B2 (en) * | 2013-03-01 | 2016-04-12 | Sputtering Components, Inc. | Sputtering apparatus |
-
2016
- 2016-01-08 CN CN202010162332.5A patent/CN111500994A/zh active Pending
- 2016-01-08 CN CN201680012047.7A patent/CN107250427A/zh active Pending
- 2016-01-08 KR KR1020177025056A patent/KR20170116077A/ko not_active Ceased
- 2016-01-08 JP JP2017501884A patent/JP6205520B2/ja active Active
- 2016-01-08 WO PCT/JP2016/000092 patent/WO2016136121A1/ja not_active Ceased
- 2016-01-08 US US15/552,079 patent/US10378102B2/en active Active
- 2016-01-08 KR KR1020207015642A patent/KR102364799B1/ko active Active
- 2016-01-19 TW TW105101557A patent/TWI617686B/zh active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20190378700A1 (en) * | 2016-11-29 | 2019-12-12 | Soleras Advanced Coatings Bvba | A universally mountable end-block |
| KR20210041307A (ko) * | 2019-10-07 | 2021-04-15 | 주식회사 에이치앤이루자 | 스퍼터링 장치용 원통형 캐소드 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016136121A1 (ja) | 2016-09-01 |
| JP6205520B2 (ja) | 2017-09-27 |
| JPWO2016136121A1 (ja) | 2017-08-31 |
| TWI617686B (zh) | 2018-03-11 |
| US10378102B2 (en) | 2019-08-13 |
| KR102364799B1 (ko) | 2022-02-18 |
| US20180030591A1 (en) | 2018-02-01 |
| KR20200066377A (ko) | 2020-06-09 |
| TW201634721A (zh) | 2016-10-01 |
| CN111500994A (zh) | 2020-08-07 |
| CN107250427A (zh) | 2017-10-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20170116077A (ko) | 마그네트론 스퍼터링 장치용 회전식 캐소드 유닛 | |
| US9096927B2 (en) | Cooling ring for physical vapor deposition chamber target | |
| EP1355343A2 (en) | Ion sputtering magnetron | |
| US20090277779A1 (en) | Magnetic field generating apparatus, magnetic field generating method, sputtering apparatus, and method of manufacturing device | |
| JP2013524015A (ja) | 円筒形の回転する磁電管スパッタリング陰極装置及び無線周波放射を使用して材料を蒸着する方法 | |
| US20110220494A1 (en) | Methods and apparatus for magnetron metallization for semiconductor fabrication | |
| TWI839503B (zh) | 濺射裝置,薄膜製造方法 | |
| US20070261957A1 (en) | Magnetron cathode and sputtering device installing it | |
| KR20180058865A (ko) | 성막 장치 | |
| KR20190069577A (ko) | 마그네트론, 마그네트론 스퍼터링 챔버 및 마그네트론 스퍼터링 장치 | |
| JP2009293089A (ja) | スパッタリング装置 | |
| JPH09104977A (ja) | 基板を被覆するための装置 | |
| KR101927881B1 (ko) | 고밀도 플라즈마 형성을 위한 스퍼터링 캐소드 및 스퍼터링 장치 | |
| KR20130136856A (ko) | 스퍼터링 소스 및 이를 포함하는 원통형 스퍼터링 장치 | |
| EP2009670A1 (en) | Sputtering Device, Magnetron Electrode and Electrode Arrangement | |
| JP2017002348A (ja) | スパッタリング装置用の回転式カソードユニット | |
| JP4939009B2 (ja) | ターゲット組立体及びこのターゲット組立体を備えたスパッタリング装置 | |
| JP2017002350A (ja) | マグネトロンスパッタリング装置用の回転式カソードユニット | |
| KR101231751B1 (ko) | 변위 가능한 평면 타겟을 이용한 스퍼터링 장치 및 방법 | |
| TW201826348A (zh) | 可通用安裝的端塊 | |
| CN109778127B (zh) | 溅射装置 | |
| JP2004095434A (ja) | イオンビーム照射装置およびホルダ駆動装置 | |
| KR20160089952A (ko) | 원통형 스퍼터링 캐소드 | |
| KR102255959B1 (ko) | 기판 상에 재료를 증착하기 위한 증착 장치 및 캐소드 구동 유닛 | |
| CN118382718A (zh) | 溅射成膜源和成膜装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20170906 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| A201 | Request for examination | ||
| AMND | Amendment | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20170913 Comment text: Request for Examination of Application |
|
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20190501 Patent event code: PE09021S01D |
|
| AMND | Amendment | ||
| AMND | Amendment | ||
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20191213 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20190501 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |
|
| X091 | Application refused [patent] | ||
| AMND | Amendment | ||
| PX0901 | Re-examination |
Patent event code: PX09011S01I Patent event date: 20191213 Comment text: Decision to Refuse Application Patent event code: PX09012R01I Patent event date: 20191101 Comment text: Amendment to Specification, etc. Patent event code: PX09012R01I Patent event date: 20190710 Comment text: Amendment to Specification, etc. Patent event code: PX09012R01I Patent event date: 20170913 Comment text: Amendment to Specification, etc. |
|
| PX0601 | Decision of rejection after re-examination |
Comment text: Decision to Refuse Application Patent event code: PX06014S01D Patent event date: 20200302 Comment text: Amendment to Specification, etc. Patent event code: PX06012R01I Patent event date: 20200213 Comment text: Decision to Refuse Application Patent event code: PX06011S01I Patent event date: 20191213 Comment text: Amendment to Specification, etc. Patent event code: PX06012R01I Patent event date: 20191101 Comment text: Amendment to Specification, etc. Patent event code: PX06012R01I Patent event date: 20190710 Comment text: Notification of reason for refusal Patent event code: PX06013S01I Patent event date: 20190501 Comment text: Amendment to Specification, etc. Patent event code: PX06012R01I Patent event date: 20170913 |
|
| X601 | Decision of rejection after re-examination | ||
| A107 | Divisional application of patent | ||
| PA0104 | Divisional application for international application |
Comment text: Divisional Application for International Patent Patent event code: PA01041R01D Patent event date: 20200601 |