KR20200077479A - 은 나노선-그래핀 복합 나노박막 및 이의 제조방법 - Google Patents
은 나노선-그래핀 복합 나노박막 및 이의 제조방법 Download PDFInfo
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- KR20200077479A KR20200077479A KR1020200074707A KR20200074707A KR20200077479A KR 20200077479 A KR20200077479 A KR 20200077479A KR 1020200074707 A KR1020200074707 A KR 1020200074707A KR 20200074707 A KR20200074707 A KR 20200074707A KR 20200077479 A KR20200077479 A KR 20200077479A
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- graphene
- thin film
- silver nanowire
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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Abstract
Description
도 2(a)는 실시예 1에 따른 복합 나노박막을 SEM으로 나타낸 것이고, 도 2(b)는 실시예 1에 따른 복합 나노박막을 TEM으로 나타낸 것이다.
도 3은 비교예 1(왼쪽) 및 실시예 1(오른쪽)의 전자선 조사선량에 따른 XPS Ag 3d core level spectra를 나타낸 그래프이다.
도 4는 비교예 1(Ag/SiO2) 및 실시예 1(G/Ag/SiO2)에 따른 복합 나노박막의 시간에 따른 면저항 안정성을 나타낸 그래프이다.
도 5는 복합 나노박막에 대한 굽힘 테스트 사진을 나타낸 것이다.
도 6은 실시예 1에 따른 복합 나노박막의 굽힙 테스트 결과를 그래프로 나타낸 것이다.
Claims (10)
- 기판 상에 은 나노선 네트워크층을 형성하는 단계,
상기 은 나노선 네트워크층 상에 습식 전사를 이용하여 그래핀층을 적층하는 그래핀층 형성단계 및
전자선을 조사하는 광 조사 단계
를 포함하는 은 나노선 및 그래핀을 이용한 복합 나노박막의 제조방법. - 제1항에 있어서,
상기 그래핀층 형성단계는 고분자 필름의 일면에 점착된 그래핀층을 은 나노선 네트워크층 상에 전사한 다음 상기 고분자 필름을 제거하여 실시하는 것인 복합 나노박막의 제조방법. - 제1항에 있어서,
상기 광 조사 단계는 가속 전압 1 내지 10MeV 및 조사선량 20 내지 200 Gy의 조건 하에서 전자선을 조사하는 것인 복합 나노박막의 제조방법. - 제1항에 있어서,
상기 은 나노선 네트워크층 형성단계는 은 나노선 분산액을 코팅하는 것을 포함하는 복합 나노박막의 제조방법. - 제1항에 있어서,
상기 기판은 친수처리된 실리콘 기판인 복합 나노박막의 제조방법. - 제1항에 있어서,
상기 은 나노선은 직경이 2 내지 100nm이고, 길이가 1 내지 100㎛인 복합 나노박막의 제조방법. - 제1항에 있어서,
상기 그래핀층은 그래핀 입자, 그래핀 퀀텀닷, 그래핀 리본, 그래핀 플레이크 및 이들의 혼합물 중에서 선택되는 어느 하나의 성분으로 형성된 것인 복합 나노박막의 제조방법. - 기판, 은 나노선 네트워크층 및 그래핀층을 포함하며,
상기 그래핀층은 은 나노선과 결착되어 은 나노선 네트워크층을 캡슐화하는 것인 복합 나노박막. - 제8항에 있어서,
상기 복합 나노박막은 평균 면저항이 100 ohm/sq 이하이고, 1cm의 곡률반경으로 10,000회 굽힘 테스트에 따른 면저항 증가율이 50% 이하인 복합 나노박막. - 제8항의 복합 나노박막을 포함하는 유연전극.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020200074707A KR102188944B1 (ko) | 2020-06-19 | 2020-06-19 | 은 나노선-그래핀 복합 나노박막 및 이의 제조방법 |
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| KR1020200074707A KR102188944B1 (ko) | 2020-06-19 | 2020-06-19 | 은 나노선-그래핀 복합 나노박막 및 이의 제조방법 |
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| KR1020180111220A Division KR20200032332A (ko) | 2018-09-18 | 2018-09-18 | 은 나노선-그래핀 복합 나노박막 및 이의 제조방법 |
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| KR20200077479A true KR20200077479A (ko) | 2020-06-30 |
| KR102188944B1 KR102188944B1 (ko) | 2020-12-09 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119819931A (zh) * | 2025-01-13 | 2025-04-15 | 曲阜师范大学 | 一种黑磷和银纳米线异质结复合材料及其制备方法和应用 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070194225A1 (en) * | 2005-10-07 | 2007-08-23 | Zorn Miguel D | Coherent electron junction scanning probe interference microscope, nanomanipulator and spectrometer with assembler and DNA sequencing applications |
| KR20140040919A (ko) * | 2012-09-27 | 2014-04-04 | 한국과학기술원 | 은 나노와이어 네트워크―그래핀 적층형 투명전극 소재, 그 제조 방법 및 이를 포함하는 투명전극 |
| US20170164467A1 (en) * | 2015-12-07 | 2017-06-08 | Unist(Ulsan National Institute Of Science And Technology) | Method of manufacturing electroconductive nanowire network using electron beam, transparent electrode and electronic device using the same |
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- 2020-06-19 KR KR1020200074707A patent/KR102188944B1/ko active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070194225A1 (en) * | 2005-10-07 | 2007-08-23 | Zorn Miguel D | Coherent electron junction scanning probe interference microscope, nanomanipulator and spectrometer with assembler and DNA sequencing applications |
| KR20140040919A (ko) * | 2012-09-27 | 2014-04-04 | 한국과학기술원 | 은 나노와이어 네트워크―그래핀 적층형 투명전극 소재, 그 제조 방법 및 이를 포함하는 투명전극 |
| US20170164467A1 (en) * | 2015-12-07 | 2017-06-08 | Unist(Ulsan National Institute Of Science And Technology) | Method of manufacturing electroconductive nanowire network using electron beam, transparent electrode and electronic device using the same |
| KR20170067002A (ko) * | 2015-12-07 | 2017-06-15 | 울산과학기술원 | 전자 빔을 이용한 도전성 나노와이어 네트워크의 제조방법, 이를 적용한 투명 전극 및 전자 장치 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119819931A (zh) * | 2025-01-13 | 2025-04-15 | 曲阜师范大学 | 一种黑磷和银纳米线异质结复合材料及其制备方法和应用 |
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