KR830004357A - 고수율 실리콘 카바이드 전-세라믹(Pre-Ceramic)중합체의 제조방법 - Google Patents

고수율 실리콘 카바이드 전-세라믹(Pre-Ceramic)중합체의 제조방법

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Publication number
KR830004357A
KR830004357A KR1019800004307A KR800004307A KR830004357A KR 830004357 A KR830004357 A KR 830004357A KR 1019800004307 A KR1019800004307 A KR 1019800004307A KR 800004307 A KR800004307 A KR 800004307A KR 830004357 A KR830004357 A KR 830004357A
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nhr
polysilane
atoms
silicon
mol
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KR1019800004307A
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KR840001597B1 (ko
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호워드 베이니 로날드
제이알 죤 헨리 가을
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해리 디·딩맨
다우코닝 코포레숀
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/977—Preparation from organic compounds containing silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C04B35/571—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained from Si-containing polymer precursors or organosilicon monomers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
    • Y10T428/31609—Particulate metal or metal compound-containing
    • Y10T428/31612—As silicone, silane or siloxane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Products (AREA)
  • Silicon Polymers (AREA)
  • Paints Or Removers (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

내용 없음

Description

고수율 실리콘 카바이드 전-세라믹(Pre-Ceramic)중합체의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (3)

  1. (A) 다음 평균단위(Average Unit) 일반식(Ⅱ)를 갖는 폴리실란을 무수조건하에서 25℃ 내지 100℃ 온도의 적당한 용제중에서 일반식 NHR2를 갖는 아미놀리시스제(Aminolysis agent)와 3 내지 96시간동안 반응시키고, 또 (B) 그 후에 다음 일반식(I)의 폴리실란을 회수하는 단계를 거치는 것을 특징으로 하는 평균일반식(I)의 폴리실란을 제조하는 방법.
    {(CH3)2Si} {CH3Si} (I)
    {(CH3)2Si} {CH3Si} (Ⅱ)
    단 상기 일반식(I)은 0 내지 60몰% (CH3)2Si= 단위와 40 내지 100몰% CH3Si|단위로 구성되며, 또한 실리콘 원자는 다른 실리콘원자 및 일반식 -NHR을 갖는 레디칼과 결합하고, 이밖의 실리콘상의 모든 잔유결합손은 염소 또는 브롬원자와 결합함으로서 폴리실란중량을 기준으로 할 때 R이 알킬레디칼인 경우는 14 내지 60중량%-NHR, R이 페닐 레디칼인 경우는 14 내지 66중량%-NHR, R이 수소인 경우는 14 내지 25중량%-NHR이고 또 0 내지 25중량% 염소 또는 0 내지 35중량% 브롬을 함유하는 폴리실란이고, 또 상기 일반식(Ⅱ)는 0 내지 60몰% (CH3)2Si= 단위와 40 내지 100몰% CH3Si단위로 구성되고 실리콘원자의 잔유결합손은 다른 실리콘 원자, 염소원자나 또는 브롬원자에 결합되어 있어, 폴리실란 중량기준으로 10 내지 43중량%의 가수분해성 염소 또는 21 내지 63중량%의 가수분해성 브롬을 함유하는 폴리실란이며 또 R는 수소, 1개 내지 4개 탄소원자를 갖는 알킬레디칼 또는 페닐기이다.
  2. 다음 평균단위일반식(Average unit formnla)(I)을 갖는 폴리실란을 주성분으로 하는 조성물.
    {(CH3)2Si} {CH3Si} (I)
    단 상기 일반식(I)은 0 내지 60몰% (CH3)2Si= 단위와 40 내지 100몰% CH3Si|단위로 구성되며, 또한 실리콘 원자는 다른 실리콘 원자 및 일반식 -NHR을 갖는 레디칼과 결합하고, 이밖의 실리콘상의 모든 잔유결합손은 염소 또는 브롬원자와 결합함으로서 폴리실란 중량을 기준으로 할때, R이 알킬레디칼인 경우는 14 내지 60중량%-NHR, R이 페닐레디칼인 경우는 14 내지 66중량%-NHR, R이 수소인 경우는 14 내지 25중량%-NHR이고 또 0 내지 25중량% 염소 또는 0 내지 35중량% 브롬을 함유하는 폴리실란이고, 또 R는 수소, 1개 내지 4개 탄소원자를 갖는 알킬레디칼 또는 페닐기이다.
  3. 다음 평균 단위 일반식(I)을 갖는 폴리실란을 가열하는 단계를 포함하는 실리콘 카바이드 세라믹물질의 제조방법.
    {(CH3)2Si} {CH3Si} (I)
    단 상기 일반식(I)은 0 내지 60몰% (CH3)2Si= 단위와 40 내지 100몰% CH3Si|단위로 구성되며, 또한 실리콘원자는 다른 실리콘원자 및 일반식 -NHR을 갖는 레디칼과 결합하고, 이밖의 실리콘상의 모든 잔유결합손은 염소 또는 브롬원자와 결합함으로서 폴리실란중량을 기준으로 할 때, R이 알킬레디칼인 경우는 14 내지 60중량%-NHR, R이 페닐레디칼인 경우는 14 내지 66중량%-NHR, R이 수소인 경우는 14 내지 25중량%-NHR이고 또 0 내지 25중량% 염소 또는 0 내지 35중량% 브롬을 함유하는 폴리실란이고, 또 R는 수소, 1개 내지 4개 탄소원자를 갖는 알킬레디칼 또는 페닐기이다.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019800004307A 1980-07-23 1980-11-10 실리콘 카바이드 세라믹 물질 제조용 폴리실란의 제조방법 Expired KR840001597B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/171,556 US4314956A (en) 1980-07-23 1980-07-23 High yield silicon carbide pre-ceramic polymers
US171,556 1988-03-22

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KR830004357A true KR830004357A (ko) 1983-07-09
KR840001597B1 KR840001597B1 (ko) 1984-10-11

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US (1) US4314956A (ko)
JP (1) JPS5734131A (ko)
KR (1) KR840001597B1 (ko)
AU (1) AU538779B2 (ko)
BE (1) BE886610A (ko)
CA (1) CA1152724A (ko)
CH (1) CH648324A5 (ko)
DE (1) DE3041759C2 (ko)
FR (1) FR2487366A1 (ko)
GB (1) GB2081289B (ko)
IT (1) IT1135329B (ko)
NL (1) NL8005926A (ko)
SE (1) SE446872B (ko)

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DE3041759C2 (de) 1985-07-11
BE886610A (fr) 1981-06-11
IT1135329B (it) 1986-08-20
JPS6121567B2 (ko) 1986-05-28
SE446872B (sv) 1986-10-13
US4314956A (en) 1982-02-09
DE3041759A1 (de) 1982-02-25
NL8005926A (nl) 1982-02-16
CH648324A5 (de) 1985-03-15
GB2081289B (en) 1984-07-25
CA1152724A (en) 1983-08-30
JPS5734131A (en) 1982-02-24
KR840001597B1 (ko) 1984-10-11
FR2487366B1 (ko) 1983-12-30
AU6373280A (en) 1982-01-28
GB2081289A (en) 1982-02-17
AU538779B2 (en) 1984-08-30
FR2487366A1 (fr) 1982-01-29
IT8119545A0 (it) 1981-02-06
SE8104495L (sv) 1982-01-24

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