KR900007108A - 압접형 반도체장치 - Google Patents
압접형 반도체장치Info
- Publication number
- KR900007108A KR900007108A KR1019890015033A KR890015033A KR900007108A KR 900007108 A KR900007108 A KR 900007108A KR 1019890015033 A KR1019890015033 A KR 1019890015033A KR 890015033 A KR890015033 A KR 890015033A KR 900007108 A KR900007108 A KR 900007108A
- Authority
- KR
- South Korea
- Prior art keywords
- press
- semiconductor device
- type semiconductor
- type
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/10—Containers or parts thereof
- H10W76/12—Containers or parts thereof characterised by their shape
- H10W76/13—Containers comprising a conductive base serving as an interconnection
- H10W76/138—Containers comprising a conductive base serving as an interconnection having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
- H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63-263455 | 1988-10-19 | ||
| JP63263455A JP2739970B2 (ja) | 1988-10-19 | 1988-10-19 | 圧接型半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR900007108A true KR900007108A (ko) | 1990-05-09 |
| KR930007517B1 KR930007517B1 (ko) | 1993-08-12 |
Family
ID=17389752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019890015033A Expired - Fee Related KR930007517B1 (ko) | 1988-10-19 | 1989-10-19 | 압접형 반도체장치 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4996586A (ko) |
| EP (1) | EP0365007A3 (ko) |
| JP (1) | JP2739970B2 (ko) |
| KR (1) | KR930007517B1 (ko) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3258200B2 (ja) * | 1995-05-31 | 2002-02-18 | 株式会社東芝 | 圧接型半導体装置 |
| US5210601A (en) * | 1989-10-31 | 1993-05-11 | Kabushiki Kaisha Toshiba | Compression contacted semiconductor device and method for making of the same |
| JP2755761B2 (ja) * | 1990-01-26 | 1998-05-25 | 株式会社東芝 | 半導体装置 |
| JP3137375B2 (ja) * | 1990-09-20 | 2001-02-19 | 株式会社東芝 | 圧接型半導体装置 |
| GB9109542D0 (en) * | 1991-05-02 | 1991-06-26 | Semitron Ind Ltd | Semiconductor device assembly |
| JP2804216B2 (ja) * | 1993-06-22 | 1998-09-24 | 株式会社日立製作所 | ゲートターンオフサイリスタ |
| JP3471880B2 (ja) * | 1994-02-23 | 2003-12-02 | 三菱電機株式会社 | 圧接型半導体装置 |
| JPH08242009A (ja) * | 1994-12-02 | 1996-09-17 | Eurec Europ G Fur Leistungshalbleiter Mbh & Co Kg | パワー半導体デバイス |
| JP3588503B2 (ja) * | 1995-06-20 | 2004-11-10 | 株式会社東芝 | 圧接型半導体装置 |
| US5652467A (en) * | 1995-07-27 | 1997-07-29 | Hitachi, Ltd. | Semiconductor device and package structure therefore and power inverter having semiconductor device |
| JPH09135023A (ja) * | 1995-11-08 | 1997-05-20 | Toshiba Corp | 圧接型半導体装置 |
| JP3018971B2 (ja) * | 1995-12-18 | 2000-03-13 | 富士電機株式会社 | 半導体装置 |
| US6335548B1 (en) * | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
| US6521916B2 (en) * | 1999-03-15 | 2003-02-18 | Gentex Corporation | Radiation emitter device having an encapsulant with different zones of thermal conductivity |
| DE10041112B4 (de) * | 2000-08-22 | 2006-05-24 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Isolierelement |
| JP3954314B2 (ja) * | 2001-01-23 | 2007-08-08 | 株式会社東芝 | 圧接型半導体装置 |
| US6639360B2 (en) | 2001-01-31 | 2003-10-28 | Gentex Corporation | High power radiation emitter device and heat dissipating package for electronic components |
| US7075112B2 (en) * | 2001-01-31 | 2006-07-11 | Gentex Corporation | High power radiation emitter device and heat dissipating package for electronic components |
| EP1298733A1 (en) * | 2001-09-28 | 2003-04-02 | ABB Schweiz AG | Turn-off high-power semiconductor device |
| JP2005116355A (ja) | 2003-10-08 | 2005-04-28 | Nec Microwave Inc | マイクロ波管システム及びマイクロ波管 |
| US8070329B1 (en) | 2005-02-11 | 2011-12-06 | Gentex Corporation | Light emitting optical systems and assemblies and systems incorporating the same |
| DE102014005879B4 (de) * | 2014-04-16 | 2021-12-16 | Infineon Technologies Ag | Vertikale Halbleitervorrichtung |
| US9455253B2 (en) * | 2014-07-23 | 2016-09-27 | Stmicroelectronics (Tours) Sas | Bidirectional switch |
| US10181445B2 (en) * | 2014-12-29 | 2019-01-15 | Mitsubishi Electric Corporation | Power module |
| WO2022043033A2 (en) * | 2020-08-31 | 2022-03-03 | Hitachi Energy Switzerland Ag | Electronic device, package and semiconductor chip therefore |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4099201A (en) * | 1977-04-11 | 1978-07-04 | General Electric Company | Semiconductor rectifier assembly having an insulating material therein that evolves gases when exposed to an arc |
| JPS5591151U (ko) * | 1978-12-19 | 1980-06-24 | ||
| JPS57100737A (en) * | 1980-12-16 | 1982-06-23 | Toshiba Corp | Semiconductor device |
| JPS5871658A (ja) * | 1981-10-23 | 1983-04-28 | Toshiba Corp | 圧接型半導体装置 |
| JPS594033A (ja) * | 1982-06-30 | 1984-01-10 | Toshiba Corp | 圧接型半導体装置 |
| JPS5986260A (ja) * | 1982-11-10 | 1984-05-18 | Hitachi Ltd | ゲ−トタ−ンオフサイリスタ |
| DE3308661A1 (de) * | 1983-03-11 | 1984-09-20 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Halbleiterelement |
| JPS60154629A (ja) * | 1984-01-25 | 1985-08-14 | Hitachi Ltd | 圧接型半導体装置 |
| JPS60133648U (ja) * | 1984-02-16 | 1985-09-06 | 株式会社 富士電機総合研究所 | 半導体装置 |
| JPS6197933A (ja) * | 1984-10-19 | 1986-05-16 | Hitachi Ltd | 全圧接型半導体装置 |
| JPH065686B2 (ja) * | 1985-09-04 | 1994-01-19 | 株式会社日立製作所 | 圧接型半導体装置 |
| JPH081914B2 (ja) * | 1987-03-31 | 1996-01-10 | 株式会社東芝 | 圧接型半導体装置 |
-
1988
- 1988-10-19 JP JP63263455A patent/JP2739970B2/ja not_active Expired - Fee Related
-
1989
- 1989-10-17 US US07/422,900 patent/US4996586A/en not_active Expired - Lifetime
- 1989-10-19 KR KR1019890015033A patent/KR930007517B1/ko not_active Expired - Fee Related
- 1989-10-19 EP EP19890119422 patent/EP0365007A3/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02110944A (ja) | 1990-04-24 |
| JP2739970B2 (ja) | 1998-04-15 |
| KR930007517B1 (ko) | 1993-08-12 |
| EP0365007A2 (en) | 1990-04-25 |
| US4996586A (en) | 1991-02-26 |
| EP0365007A3 (en) | 1991-01-23 |
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