KR910016902A - 습식-에칭 방법 및 조성물 - Google Patents

습식-에칭 방법 및 조성물 Download PDF

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Publication number
KR910016902A
KR910016902A KR1019910003727A KR910003727A KR910016902A KR 910016902 A KR910016902 A KR 910016902A KR 1019910003727 A KR1019910003727 A KR 1019910003727A KR 910003727 A KR910003727 A KR 910003727A KR 910016902 A KR910016902 A KR 910016902A
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South Korea
Prior art keywords
polyamic acid
etching
layer
base
aqueous solution
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KR1019910003727A
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KR100201194B1 (ko
Inventor
에릭 피야트 더글라스
진 베흘러 앨리슨
앤 나바 신씨아
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랄프 챨스 메드허스트
아모코 코포레이션
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Publication of KR910016902A publication Critical patent/KR910016902A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/12—Chemical modification
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Paints Or Removers (AREA)
  • Weting (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

내용 없음

Description

습식-에칭 방법 및 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (17)

  1. 치환된 탄화수소 용매와 비이온성 염기를 0.1 내지 49 : 49 내지 0.1의 중량비로 함유하고, 이온성 염기는 1.,0% 미만으로 함유하며 물이 대부분을 구성하는 수용액을 포함하는, 폴리암산 또는 부분적으로 경화된 폴리암산을 에칭시키기 위한 습식-에칭 조성물.
  2. 알콜과 비이온성 염기를 0.1 내지 49 : 49 내지 0.1의 중량비로 함유하고, 이온성 염기는 1.0% 미만으로 함유하며 물이 대부분을 구성하는 수용액을 포함하는, 폴리암산 또는 부분적으로 구성하는 수용액을 포함하는, 폴리암산 또는 부분적으로 경화된 폴리암산을 에칭시키기 위한 습식-에칭 조성물.
  3. 제2항에 있어서, 알콜이 1내지 12개의 탄소 원자 및 1개 이상의 하이드록시 그룹을 포함하는 조성물.
  4. 제3항에 있어서, 알콜이 메탄올, 에탄올 및 부탄올로 이루어진 그룹중에서 선택되는 조성물.
  5. 제2항에 있어서, 알콜이 에탄올과 부탄올의 공용매인 조성물.
  6. 제2항에 있어서, 비이온성 염기가 1내지 12개의 탄소 원자 및 1개 이상의 질소 원자를 갖는 알킬아민인 조성물.
  7. 알콜과 알킬아민을 0.1내지 49 : 49 내지 0.1의 중량비로 함유하고, 이온성 염기는 1.0% 미만으로 함유하며 물이 대부분을 구성하는 수용액을 포함하는, 폴리암산 또는 부분적으로 경화된 폴리암산을 에칭시키기 위한 습식-에칭 조성물.
  8. 치환된 탄화수소 용매와 비이온성 염기를 0.1 내지 49 : 49 내지 0.1의 중량비로 함유하고, 이온성 염기는 1.0% 미만으로 함유하며 물이 대부분을 구성하는 수용액을 포함하는 습식-에칭 조성물을 폴리암산 층과 접촉시킴을 포함하여 폴리암산 층을 에칭시키는 방법.
  9. 제8항에 있어서, 폴리암산 또는 부분적으로 경화된 폴리암산이 2,2-비스(3,4-디카복시페닐)-헥사플루오로프로판 이무수물 및 하나 이상의 디아민으로부터 유도되는 방법.
  10. 제8항에 있어서, 치환된 탄화수소 용매가 알콜인 방법.
  11. 제10항에 있어서, 알콜이 메탄올, 에탄올 및 부탄올로 이루어진 그룹중에서 선택되는 방법.
  12. 제8항에 있어서, 비이온성 염기가 1내지 12개의 탄소 원자 및 1개 이상의 질소 원자를 갖는 알킬아민인 방법.
  13. 제12항에 있어서, 알킬아민이 트리에탄올아민, 트리에틸아민, 트리(하이드록시메틸)아미노메탄, 트리메틸아민, N,N-디메틸에탄올아민 및 N,N-디메틸에탄올아민으로 이루어진 그룹 중에서 선택되는 방법.
  14. a) 기재상에 폴리암산 층을 도포하고, b) 폴리암산층상에 포지티브 감광성내식막 물질 층을 도포하고, c) 감광성내식막 물질 층을 감광성내식막 물질이 제거될 장소에 위치하는 개방부 패턴을 갖는 마스크로 은폐시키고, d) 감광성내식막 물질을 마스크중의 개방부 패턴을 통해 화학선에 노출시켜 감광성내식막 물질의 노출 및 비노출 영역을 생성시키고, e) 마스크를 제거하고, f) 노출된 감광성내식막 물질을 현상 및 제거하여 폴리암산 부분을 노출시키고 g) 노출된 폴리암산을, 치환된 탄화수소 용액와 비이온성 염기를 0.1 내지 49 : 49내지 0.1의 중량비로 함유하고, 이온성 염기는 1.0%미만으로 함유하며 이 대부분을 구성하는 수용액을 포함하는 습식-에칭 조성물로 에칭시키고, h) 잔류하는 감광성내식막 물질을 현상 및 제거하고, i) 폴리암산을 폴리이미드로 이미드화함을 포함하여, 폴리 암산 층 또는 부분적으로 경화된 폴리암산층을 에칭시키는 방법.
  15. 제14항에 있어서, 단계 f) 및 g)가 1단계로 수행되는 방법.
  16. 제15항에 있어서, 약 0.25중량% 내지 1.0중량% 미만의 테트라메틸암모늄 하이드록사이드를 함유하는 방법.
  17. 알콜과 비이온성 염기를 0.1 내지 49 : 49 내지 0.1의 중량비로 함유하고, 이온성 염기는 1.0% 미만으로 함유하며 물이 대부분을 구성하는 수용액을 포함하는 습식-에칭 조성물을 폴리암산 층과 접촉시킴을 포함하여 폴리암산 또는 부분적으로 경화된 폴리암산층을 에칭시키는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910003727A 1990-03-09 1991-03-08 습식 에칭 방법 및 조성물 Expired - Fee Related KR100201194B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US49143890A 1990-03-09 1990-03-09
US07/491,438 1990-03-09
US7/491,438 1990-03-09
US07/605,555 US5183534A (en) 1990-03-09 1990-10-30 Wet-etch process and composition
US605,555 1990-10-30
US07/605555 1990-10-30

Publications (2)

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KR910016902A true KR910016902A (ko) 1991-11-05
KR100201194B1 KR100201194B1 (ko) 1999-06-15

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KR1019910003727A Expired - Fee Related KR100201194B1 (ko) 1990-03-09 1991-03-08 습식 에칭 방법 및 조성물

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US (2) US5183534A (ko)
EP (1) EP0446032B1 (ko)
JP (1) JP3173730B2 (ko)
KR (1) KR100201194B1 (ko)
CA (1) CA2037490C (ko)
DE (1) DE69109898T2 (ko)
MX (1) MX172813B (ko)
MY (1) MY105324A (ko)

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KR101527105B1 (ko) * 2010-07-09 2015-06-08 가켄 테크 가부시키가이샤 세정제 조성물용 원액, 세정제 조성물 및 세정 방법
WO2013066058A2 (ko) * 2011-11-04 2013-05-10 동우 화인켐 주식회사 자성체막 및 자성체막 잔류물 제거용 조성물
KR102468776B1 (ko) 2015-09-21 2022-11-22 삼성전자주식회사 폴리실리콘 습식 식각용 조성물 및 이를 이용한 반도체 소자의 제조 방법
JP2019162565A (ja) * 2016-07-25 2019-09-26 富士フイルム株式会社 ガス分離膜、ガス分離膜モジュールおよびガス分離装置
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Also Published As

Publication number Publication date
JPH04219933A (ja) 1992-08-11
EP0446032A2 (en) 1991-09-11
EP0446032B1 (en) 1995-05-24
DE69109898T2 (de) 1995-10-19
KR100201194B1 (ko) 1999-06-15
EP0446032A3 (en) 1992-04-15
US5183534A (en) 1993-02-02
CA2037490A1 (en) 1992-05-01
DE69109898D1 (de) 1995-06-29
US5292445A (en) 1994-03-08
MY105324A (en) 1994-09-30
JP3173730B2 (ja) 2001-06-04
CA2037490C (en) 2002-05-21
MX172813B (es) 1994-01-13

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