KR930013755A - 오프셋 보상 호올 센서 - Google Patents
오프셋 보상 호올 센서 Download PDFInfo
- Publication number
- KR930013755A KR930013755A KR1019920024583A KR920024583A KR930013755A KR 930013755 A KR930013755 A KR 930013755A KR 1019920024583 A KR1019920024583 A KR 1019920024583A KR 920024583 A KR920024583 A KR 920024583A KR 930013755 A KR930013755 A KR 930013755A
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- South Korea
- Prior art keywords
- hool
- cells
- offset
- sensor
- voltage
- Prior art date
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- 239000011888 foil Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 4
- 238000000034 method Methods 0.000 claims 3
- 238000005234 chemical deposition Methods 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000007373 indentation Methods 0.000 claims 1
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/142—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
- Secondary Cells (AREA)
Abstract
Description
Claims (10)
- 호올 전압 측정을 위해 제1 및 제2직교 위치내에 호올 검출기(hd)의 결합 구조가 동일하고, 상기 호올 검출기의 공급 전류 및 호올 전압탭을 직각으로 스위칭하는 장치(f)와;제1 및 제2호올 전압값(h1,h2)을 공급하여 오프셋 보상 호올 전압값(hO)을 형성하는 가산 장치를 구비하는 오프셋 보상 호올 센서에 있어서, 상기 호올 검출기(hd)는 적어도 제1 및 제2호올 전지(e1,e2)를 포함하고; 상기 제1 및 제2호올 전지(e1,e2)는 외형적으로 동일하며, 공통기판상에 기술적, 열적, 공간적으로 밀접하게 결합되고, 각각 직각으로 스위치 가능하며; 상기 제1호올 전압값(h1)은 제1직교 위치내에 상기 제1 및 제2호올 전지(e1,e2)각각의 호올 전압(v11,v21)의 합이거나 병렬 스위칭 값이며: 제1직교 위치내에서 사익 제1 및 제2호올 전지(e1,e2)의 외형 결합 정위가 호올 전지공급 전류(i1,i2)의 방향과 관련하여 외형 결합 정위를 갖는 제2직교 위치내에서 90°회전되는 0°또는 180°와 상이한 각을 갖는 것을 특징으로 하는 오프셋 보상 호올 센서.
- 제1항에 있어서, 상기 호올 전지(e1,e2), 계산 장치(m) 및 호올 검출기 공급전류를 작각으로 스위칭하는 장치(f)는 공통 반도체 표면상에 집적되는 것을 특징으로 하는 오프셋 보상 호올 센서.
- 제2항에 있어서, 상기 호올 전압(v11,v21;v12,v22) 또는 상기 제1 및 제2호올 전압값(h1,h2)은 아날로그 디지탈 변환기(c)에 의해 숫자화 되고, 상기 가산 장치는 디지탈 가산기(ad)를 구비하는 것을 특징으로 하는 오프셋 보상 호울센서.
- 제2항에 있어서, 상기 호올 전지(e1,e2)는 확산되거나 주입되는 영역에 의해 반도체 표면 내부 또는 그위에 형성되는 것을 특징으로 하는 오프셋 보상 호올 센서.
- 제2항에 있어서, 상기 호올 전지(e1,e2)는 게이트 전극에 의해 생성되거나 유도되는 역전층에 의해 상기 반도체 표면상에 형성되는 것을 특징으로 하는 오프셋 보상 호울센서.
- 제2항에 있어서, 상기 호올 전지(e1,e2)는 반도체 표면상에, 특히 스퍼터링 또는 화학 중착에 의해 중착되는 얇은층으로 구성되는 것을 특징으로 하는 오프셋 보상 호울센서.
- 제2항에 있어서, 상기 호올 전지(e1,e2)는는 측정 접점으로부터 분리되는 공급 전류 주입 및 공급 전류 충돌장치에 결합되는 것을 특징으로 하는 오프셋 보상 호올 센서.
- 제7항에 있어서, 상기 전류는 각각의 호올 전지(e1,e2)의 저항 영역인 MOS트랜지스터 각각의 하나의 전극을 통해 상기 호올 전지(e1,e2)내로 비접촉 가능하게 주입되고, 또한 상기 전지로 부터 꺼낼 수 있는 것을 특징으로 하는 오프셋 보상 호올 센서.
- 제2항에 있어서, 상기 호올 전지(e1,e2)와 기술적 및 열적으로 결합되는 정전류원(q)은 상기 호올 전지(e1,e2)에 공급하는 온도 독립 정전류를 발생시키며, 상기 정전류 값은 동작 영역에 있는 기준 온도(To)로 상기 호올 전지의 시이트 비저항(Rsq)에 반비례 하는 것을 특징으로 하는 오프셋 보상 호올 센서.
- 제1항에 있어서, 상기 제1 및 제2호올 전지(e1,e2)와 병렬 결합되고, 오프셋 전압 사전 보상을 위해 외형상 동일하며, 직각으로 스위치 가능한 호올 전지(e3,e4)를 추가로 포함하는 것을 특징으로 하는 오프셋 보상 호올센서.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE91122046.5 | 1991-12-21 | ||
| EP91122046.5 | 1991-12-21 | ||
| EP91122046A EP0548391B1 (de) | 1991-12-21 | 1991-12-21 | Offsetkompensierter Hallsensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930013755A true KR930013755A (ko) | 1993-07-22 |
| KR100202774B1 KR100202774B1 (ko) | 1999-06-15 |
Family
ID=8207465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920024583A Expired - Lifetime KR100202774B1 (ko) | 1991-12-21 | 1992-12-17 | 오프셋 보상 호올 센서 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5406202A (ko) |
| EP (1) | EP0548391B1 (ko) |
| JP (1) | JP3108738B2 (ko) |
| KR (1) | KR100202774B1 (ko) |
| DE (1) | DE59108800D1 (ko) |
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| US9013167B2 (en) | 2010-11-09 | 2015-04-21 | Texas Instruments Incorporated | Hall effect device having voltage based biasing for temperature compensation |
| US8633687B2 (en) * | 2010-12-21 | 2014-01-21 | Robert Bosch Gmbh | Hall Effect sensor with reduced offset |
| JP5512561B2 (ja) * | 2011-01-19 | 2014-06-04 | 旭化成エレクトロニクス株式会社 | ホール電圧検出装置 |
| EP2490036B1 (de) | 2011-02-18 | 2013-08-28 | Melexis Technologies NV | Stresssensor zur Erfassung mechanischer Spannungen in einem Halbleiterchip und stresskompensierter Hallsensor |
| JP5785731B2 (ja) * | 2011-02-24 | 2015-09-30 | ローム株式会社 | 電子回路、集積回路、ならびにそれらを搭載する磁気検出装置および電子機器 |
| KR20120116036A (ko) * | 2011-04-12 | 2012-10-22 | 삼성전기주식회사 | 오프셋을 제거한 홀 센서 |
| DE102011017096A1 (de) | 2011-04-14 | 2012-10-18 | Austriamicrosystems Ag | Hall-Sensor-Halbleiterbauelement und Verfahren zum Betrieb des Hall-Sensor-Halbleiterbauelementes |
| DE102011115566A1 (de) | 2011-10-10 | 2013-04-11 | Austriamicrosystems Ag | Hall-Sensor |
| US9389247B2 (en) * | 2011-11-04 | 2016-07-12 | Infineon Technologies Ag | Current sensors |
| JP5802187B2 (ja) * | 2012-01-30 | 2015-10-28 | 旭化成エレクトロニクス株式会社 | ホール起電力信号検出回路及びその電流センサ |
| EP2624001B1 (en) | 2012-02-01 | 2015-01-07 | ams AG | Hall sensor and sensor arrangement |
| EP2662675A1 (de) | 2012-05-07 | 2013-11-13 | Melexis Technologies NV | Verfahren für die Bestimmung eines Stresswertes für isotropen Stress und Verfahren für die Bestimmung eines Magnetfeldes und Stresssensor und Hallsensor |
| JP6004758B2 (ja) * | 2012-06-07 | 2016-10-12 | エスアイアイ・セミコンダクタ株式会社 | 磁気センサ |
| GB201217293D0 (en) * | 2012-09-27 | 2012-11-14 | Texas Instruments Deutschland | Improvements on or relating to sensing arrangements |
| JP6297782B2 (ja) * | 2013-02-28 | 2018-03-20 | 旭化成エレクトロニクス株式会社 | ホール起電力信号検出回路及びその電流センサ |
| GB201319627D0 (en) | 2013-11-06 | 2013-12-18 | Melexis Technologies Nv | Hall sensor readout system with offset determination using the hall element itself |
| WO2016047149A1 (ja) * | 2014-09-26 | 2016-03-31 | 旭化成エレクトロニクス株式会社 | ホール起電力信号検出回路及び電流センサ |
| DE102015103075B4 (de) * | 2015-02-20 | 2017-04-20 | Infineon Technologies Ag | Detektion und kompensation mechanischer spannungen |
| DE102015102853B4 (de) | 2015-02-27 | 2025-11-06 | Infineon Technologies Ag | Magnetfeldsensor |
| JP6618370B2 (ja) * | 2015-03-05 | 2019-12-11 | エイブリック株式会社 | 磁気センサ回路 |
| RU2678958C1 (ru) * | 2017-11-24 | 2019-02-04 | Акционерное общество "ПКК МИЛАНДР" | Активный магниточувствительный сенсор многоэлементного преобразователя магнитного поля |
| DE102018005677B4 (de) * | 2018-07-19 | 2025-05-08 | Tdk-Micronas Gmbh | Hall-Sensor |
| CN114391090B (zh) * | 2019-09-24 | 2024-07-16 | 海拉有限双合股份公司 | 带有霍尔传感器和磁体的位移测量装置 |
| EP3958003A1 (de) | 2020-08-18 | 2022-02-23 | Siemens Aktiengesellschaft | Strommessvorrichtung mit hallsensoren |
| DE102022114766B3 (de) | 2022-06-13 | 2023-11-30 | Tdk-Micronas Gmbh | Chopped-Hall-Sensor und Verfahren zum Messen mindestens einer Hall-Spannung |
| DE102022133510A1 (de) | 2022-12-15 | 2024-06-20 | Schaeffler Technologies AG & Co. KG | Strahlpumpe und Verwendung einer Strahlpumpe in einem Brennstoffzellensystem |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL280736A (ko) * | 1961-07-10 | |||
| DE1194971B (de) * | 1963-04-25 | 1965-06-16 | Siemens Ag | Magnetfeld-Messsonde mit Hallgenerator |
| US3886446A (en) * | 1972-10-16 | 1975-05-27 | Sergei Glebovich Laranov | Digital indicator of the electromotive force of a hall-effect device which eliminates the influence of the non equipotential voltage |
| US4037150A (en) * | 1973-05-30 | 1977-07-19 | Sergei Glebovich Taranov | Method of and apparatus for eliminating the effect of non-equipotentiality voltage on the hall voltage |
| DE3346646A1 (de) * | 1983-12-23 | 1985-07-04 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Magnetfeldsensor |
| US4875008A (en) * | 1988-02-16 | 1989-10-17 | North American Philips Corporation | Device for sensing the angular position of a shaft |
-
1991
- 1991-12-21 EP EP91122046A patent/EP0548391B1/de not_active Expired - Lifetime
- 1991-12-21 DE DE59108800T patent/DE59108800D1/de not_active Expired - Lifetime
-
1992
- 1992-12-08 US US07/987,918 patent/US5406202A/en not_active Expired - Lifetime
- 1992-12-17 KR KR1019920024583A patent/KR100202774B1/ko not_active Expired - Lifetime
- 1992-12-21 JP JP04340684A patent/JP3108738B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE59108800D1 (de) | 1997-08-28 |
| US5406202A (en) | 1995-04-11 |
| KR100202774B1 (ko) | 1999-06-15 |
| EP0548391B1 (de) | 1997-07-23 |
| JPH0611556A (ja) | 1994-01-21 |
| JP3108738B2 (ja) | 2000-11-13 |
| EP0548391A1 (de) | 1993-06-30 |
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