ATE527701T1 - Magnetwiderstandsvorrichtung - Google Patents
MagnetwiderstandsvorrichtungInfo
- Publication number
- ATE527701T1 ATE527701T1 AT08157887T AT08157887T ATE527701T1 AT E527701 T1 ATE527701 T1 AT E527701T1 AT 08157887 T AT08157887 T AT 08157887T AT 08157887 T AT08157887 T AT 08157887T AT E527701 T1 ATE527701 T1 AT E527701T1
- Authority
- AT
- Austria
- Prior art keywords
- channel
- magnetic resistance
- resistance device
- gate electrode
- silicon
- Prior art date
Links
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Magnetic Heads (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08157887A EP2133930B1 (de) | 2008-06-09 | 2008-06-09 | Magnetwiderstandsvorrichtung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE527701T1 true ATE527701T1 (de) | 2011-10-15 |
Family
ID=39811486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT08157887T ATE527701T1 (de) | 2008-06-09 | 2008-06-09 | Magnetwiderstandsvorrichtung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8116042B2 (de) |
| EP (1) | EP2133930B1 (de) |
| JP (1) | JP5424469B2 (de) |
| AT (1) | ATE527701T1 (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE548764T1 (de) | 2009-10-30 | 2012-03-15 | Hitachi Ltd | Magnetowiderstandsvorrichtung |
| EP2703831B1 (de) | 2012-08-31 | 2015-08-05 | Hitachi Ltd. | Magnetfeldsensor |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6169183A (ja) * | 1985-08-30 | 1986-04-09 | Nec Corp | Mos型ホール素子の製造方法 |
| CA1303246C (en) * | 1988-12-23 | 1992-06-09 | Dale Lee Partin | Magnetoresistor with accumulation layer |
| US4978938A (en) * | 1988-12-23 | 1990-12-18 | General Motors Corporation | Magnetoresistor |
| EP0548391B1 (de) * | 1991-12-21 | 1997-07-23 | Deutsche ITT Industries GmbH | Offsetkompensierter Hallsensor |
| US6903429B2 (en) * | 2003-04-15 | 2005-06-07 | Honeywell International, Inc. | Magnetic sensor integrated with CMOS |
| JP4584551B2 (ja) * | 2003-06-20 | 2010-11-24 | 株式会社日立製作所 | 電界効果型磁気抵抗効果素子およびこれを利用した電子素子 |
| JP2006019728A (ja) * | 2004-06-30 | 2006-01-19 | Hitachi Global Storage Technologies Netherlands Bv | 交換結合された反強磁性/強磁性構造による垂直磁気バイアスを有する異常磁気抵抗センサ |
| JP4945721B2 (ja) * | 2004-10-27 | 2012-06-06 | 国立大学法人東北大学 | 磁気抵抗効果素子及び磁気メモリ装置 |
| US7633718B2 (en) * | 2005-06-27 | 2009-12-15 | Hitachi Global Storage Technologies Netherlands, B.V. | Lead contact structure for EMR elements |
| DE602006013106D1 (de) * | 2006-06-13 | 2010-05-06 | Hitachi Ltd | Magnetowiderstandsvorrichtung |
-
2008
- 2008-06-09 AT AT08157887T patent/ATE527701T1/de not_active IP Right Cessation
- 2008-06-09 EP EP08157887A patent/EP2133930B1/de not_active Not-in-force
-
2009
- 2009-02-23 US US12/390,557 patent/US8116042B2/en not_active Expired - Fee Related
- 2009-06-08 JP JP2009136854A patent/JP5424469B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US8116042B2 (en) | 2012-02-14 |
| EP2133930A1 (de) | 2009-12-16 |
| JP5424469B2 (ja) | 2014-02-26 |
| US20090303639A1 (en) | 2009-12-10 |
| JP2009295986A (ja) | 2009-12-17 |
| EP2133930B1 (de) | 2011-10-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2014002133A5 (de) | ||
| JP2011238334A5 (de) | ||
| JP2013238872A5 (de) | ||
| WO2010075308A3 (en) | Multiple electrode touch sensitive device | |
| JP2011171702A5 (de) | ||
| ATE526686T1 (de) | Dünnschicht-feldeffekttransistor und anzeige | |
| IN2014CN04319A (de) | ||
| JP2013048246A5 (de) | ||
| EA200700624A1 (ru) | Способ и устройство для измерения магнитного поля с помощью магниторезистивного датчика | |
| JP2016139159A5 (de) | ||
| JP2013061667A5 (de) | ||
| JP2010252318A5 (ja) | 液晶表示装置 | |
| JP2011166130A5 (de) | ||
| JP2015133484A5 (ja) | 半導体装置 | |
| GB2523932A (en) | Electric field enhanced spin transfer torque memory (STTM) device | |
| UA115423C2 (uk) | Автоматичні ін'єкційні пристрої, що мають наформовані поверхні захоплення | |
| JP2011100117A5 (ja) | 液晶表示装置 | |
| JP2011091376A5 (de) | ||
| JP2013008435A5 (de) | ||
| JP2007279748A5 (de) | ||
| ATE537458T1 (de) | Stromsensoranordnung zur messung von strömen in einem primärleiter | |
| JP2012124472A5 (ja) | 半導体装置 | |
| ATE484016T1 (de) | Bidirektionale mos-strommessschaltung | |
| ATE497641T1 (de) | Organische halbleiterzusammensetzungen mit nanopartikeln | |
| JP2014030191A5 (de) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |