KR960010559A - 상압화학기상증착법에 의한 비피에스지(bpsg)막 형성방법 - Google Patents

상압화학기상증착법에 의한 비피에스지(bpsg)막 형성방법 Download PDF

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Publication number
KR960010559A
KR960010559A KR1019940022606A KR19940022606A KR960010559A KR 960010559 A KR960010559 A KR 960010559A KR 1019940022606 A KR1019940022606 A KR 1019940022606A KR 19940022606 A KR19940022606 A KR 19940022606A KR 960010559 A KR960010559 A KR 960010559A
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South Korea
Prior art keywords
bpsg film
vapor deposition
chemical vapor
film formation
atmospheric chemical
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KR1019940022606A
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English (en)
Inventor
정창원
이상선
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019940022606A priority Critical patent/KR960010559A/ko
Publication of KR960010559A publication Critical patent/KR960010559A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

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  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 압화학기상중착법(APCVD)에 의한 BPSG막 형성 후 진행되는 열공정에서의 열적 손상으로 인한 BPSG 결정결함(crystal defect) 유발을 억제하는 상압화학기상중착법에 의한 BPSG막 형성방법에 관한 것으로, 공정튜브내로 PH3, B2H6가스를 소정량 플로우 하여 열처리 하는 상압화학기상중착법에 의한 BPSG막 형성방법에 있어서, 상기 열처리시 온도는 800 내지 900˚C로 낮츠는 것을 특징으로 한다.

Description

상압화학기상증착법에 의한 비피에스지(BPSG)막 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (3)

  1. 공정튜브내로 PH3,B2H6가스를 소정량 플로우 하여 열처리 하는 상압화학기상중착법에 의한 BPSG막형성방법에 있어서, 상기 열처리시 온도는 800내지 900˚C로 낮추는 것을 특징으로 하는 상압화학기상중착법에 의한 BPSG막 형성방법.
  2. 제1항에 있어서, 붕소에 대한 인의 몰비(mole ratio)를 2.0 이하로 하는 것을 특징으로 하는 상압화학기상중착법에 의한 BPSG막 형성방법.
  3. 제2항에 있어서, 소자가 형성될 웨이퍼의 표면을 튜브 내부로 향하게 하는 것을 특징으로 하는 상압화학기상중착법에 의한 BPGS막 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940022606A 1994-09-08 1994-09-08 상압화학기상증착법에 의한 비피에스지(bpsg)막 형성방법 Withdrawn KR960010559A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940022606A KR960010559A (ko) 1994-09-08 1994-09-08 상압화학기상증착법에 의한 비피에스지(bpsg)막 형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940022606A KR960010559A (ko) 1994-09-08 1994-09-08 상압화학기상증착법에 의한 비피에스지(bpsg)막 형성방법

Publications (1)

Publication Number Publication Date
KR960010559A true KR960010559A (ko) 1996-04-20

Family

ID=66686526

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940022606A Withdrawn KR960010559A (ko) 1994-09-08 1994-09-08 상압화학기상증착법에 의한 비피에스지(bpsg)막 형성방법

Country Status (1)

Country Link
KR (1) KR960010559A (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100687780B1 (ko) * 2006-04-18 2007-02-27 주식회사 아토 대기압 화학기상증착 장치를 이용하여 고 종횡비의 나노 갭을 채우는 ｂｐｓｇ 절연막 증착 방법
KR20240050499A (ko) 2022-10-11 2024-04-19 조영희 폴리우레탄 포옴의 폐기물을 이용한 방수 시트용 폴리우레탄 시트의 제조방법
KR102887519B1 (ko) * 2025-07-03 2025-11-18 (주)광림티엔아이 교면방수용 도막재 및 그 시공방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100687780B1 (ko) * 2006-04-18 2007-02-27 주식회사 아토 대기압 화학기상증착 장치를 이용하여 고 종횡비의 나노 갭을 채우는 ｂｐｓｇ 절연막 증착 방법
KR20240050499A (ko) 2022-10-11 2024-04-19 조영희 폴리우레탄 포옴의 폐기물을 이용한 방수 시트용 폴리우레탄 시트의 제조방법
KR102887519B1 (ko) * 2025-07-03 2025-11-18 (주)광림티엔아이 교면방수용 도막재 및 그 시공방법

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