KR970052182A - Impurity injection method - Google Patents

Impurity injection method Download PDF

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Publication number
KR970052182A
KR970052182A KR1019950067231A KR19950067231A KR970052182A KR 970052182 A KR970052182 A KR 970052182A KR 1019950067231 A KR1019950067231 A KR 1019950067231A KR 19950067231 A KR19950067231 A KR 19950067231A KR 970052182 A KR970052182 A KR 970052182A
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KR
South Korea
Prior art keywords
impurity
wafer
axis
impurity implantation
movement direction
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Application number
KR1019950067231A
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Korean (ko)
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KR0166806B1 (en
Inventor
김창현
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문정환
Lg 반도체 주식회사
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Priority to KR1019950067231A priority Critical patent/KR0166806B1/en
Publication of KR970052182A publication Critical patent/KR970052182A/en
Application granted granted Critical
Publication of KR0166806B1 publication Critical patent/KR0166806B1/en
Assigned to 주식회사 하이닉스반도체 reassignment 주식회사 하이닉스반도체 권리의 전부이전등록 Assignors: 엘지반도체 주식회사
Assigned to 매그나칩 반도체 유한회사 reassignment 매그나칩 반도체 유한회사 권리의 전부이전등록 Assignors: 주식회사 하이닉스반도체
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping

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  • Physical Vapour Deposition (AREA)

Abstract

본 발명은 불순물 주입방법에 관한 것으로, 웨이퍼에 불순물 주입에 따른 불순물 분포의 균일성을 향상시키는데 적당한 불순물 주입방법을 제공하기 위한 것이다. 이를 위한 본 발명의 불순물 주입방법은 반도체 소자 제조공정의 불순물 주입에 있어서, 이온화된 불순물 빔의 X축 이동방향과 Y축 이동방향, 그리고 웨이퍼 고정체의 Y축 이동방향의 복합적인 이동방향으로 이온화된 불순물 빔을 이동시켜 웨이퍼에 조사(照射)함을 특징으로 한다.The present invention relates to an impurity implantation method, and to provide an impurity implantation method suitable for improving the uniformity of impurity distribution according to impurity implantation into a wafer. The impurity implantation method of the present invention for this purpose in the impurity implantation of the semiconductor device manufacturing process, the ionization in the combined movement direction of the X-axis and Y-axis movement direction of the ionized impurity beam, and the Y-axis movement direction of the wafer fixture The impurity beam is moved to irradiate the wafer.

Description

불순물 주입 방법Impurity injection method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명의 불순물 주입방법을 나타낸 도면.3 is a view showing an impurity implantation method of the present invention.

Claims (2)

반도체 소자 제조공정의 불순물 주입에 있어서, 이온화된 불순물 빔의 X축 이동방향과 Y축 이동방향, 그리고 웨이퍼 고정체의 Y축 이동방향의 복합적인 이동방향으로 이온화된 불순물 빔을 이동시켜 웨이퍼에 조사(照射)함을 특징으로 하는 불순물 주입 방법 .In the impurity implantation of the semiconductor device manufacturing process, the ionized impurity beam is moved to the wafer by moving in the X- and Y-axis directions of the ionized impurity beam and the Y-axis movement direction of the wafer fixture. Impurity implantation method characterized in that (照射). 제1항에 있어서, 상기 이온화된 불순물 빔의 X축 이동방향, Y축 이동방향, 웨이퍼 고정제의 Y축 이동방향에 따른 각각의 이동 속도비는 100 : 10: 1로 함을 특징으로 하는 불순물 주입 방법.The impurity according to claim 1, wherein each of the moving speed ratios according to the X-axis moving direction, the Y-axis moving direction of the ionized impurity beam, and the Y-axis moving direction of the wafer fixing agent is 100: 10: 1. Injection method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950067231A 1995-12-29 1995-12-29 Impurity injection method Expired - Lifetime KR0166806B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950067231A KR0166806B1 (en) 1995-12-29 1995-12-29 Impurity injection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950067231A KR0166806B1 (en) 1995-12-29 1995-12-29 Impurity injection method

Publications (2)

Publication Number Publication Date
KR970052182A true KR970052182A (en) 1997-07-29
KR0166806B1 KR0166806B1 (en) 1999-02-01

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ID=19447597

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950067231A Expired - Lifetime KR0166806B1 (en) 1995-12-29 1995-12-29 Impurity injection method

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101726746B1 (en) 2016-05-02 2017-04-13 박지호 Water leak prevention film insertion device for ridge between paddies

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004063691B4 (en) 2004-05-10 2019-01-17 Hynix Semiconductor Inc. Method for implanting ions in a semiconductor device
KR100689673B1 (en) * 2004-05-10 2007-03-09 주식회사 하이닉스반도체 Non-uniform ion implantation method of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101726746B1 (en) 2016-05-02 2017-04-13 박지호 Water leak prevention film insertion device for ridge between paddies

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Publication number Publication date
KR0166806B1 (en) 1999-02-01

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