KR970052182A - 불순물 주입방법 - Google Patents
불순물 주입방법 Download PDFInfo
- Publication number
- KR970052182A KR970052182A KR1019950067231A KR19950067231A KR970052182A KR 970052182 A KR970052182 A KR 970052182A KR 1019950067231 A KR1019950067231 A KR 1019950067231A KR 19950067231 A KR19950067231 A KR 19950067231A KR 970052182 A KR970052182 A KR 970052182A
- Authority
- KR
- South Korea
- Prior art keywords
- impurity
- wafer
- axis
- impurity implantation
- movement direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (2)
- 반도체 소자 제조공정의 불순물 주입에 있어서, 이온화된 불순물 빔의 X축 이동방향과 Y축 이동방향, 그리고 웨이퍼 고정체의 Y축 이동방향의 복합적인 이동방향으로 이온화된 불순물 빔을 이동시켜 웨이퍼에 조사(照射)함을 특징으로 하는 불순물 주입 방법 .
- 제1항에 있어서, 상기 이온화된 불순물 빔의 X축 이동방향, Y축 이동방향, 웨이퍼 고정제의 Y축 이동방향에 따른 각각의 이동 속도비는 100 : 10: 1로 함을 특징으로 하는 불순물 주입 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950067231A KR0166806B1 (ko) | 1995-12-29 | 1995-12-29 | 불순물 주입방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950067231A KR0166806B1 (ko) | 1995-12-29 | 1995-12-29 | 불순물 주입방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970052182A true KR970052182A (ko) | 1997-07-29 |
| KR0166806B1 KR0166806B1 (ko) | 1999-02-01 |
Family
ID=19447597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950067231A Expired - Lifetime KR0166806B1 (ko) | 1995-12-29 | 1995-12-29 | 불순물 주입방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0166806B1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101726746B1 (ko) | 2016-05-02 | 2017-04-13 | 박지호 | 논두렁 누수 방지용 필름 삽입장치 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004063691B4 (de) | 2004-05-10 | 2019-01-17 | Hynix Semiconductor Inc. | Verfahren zum Implantieren von Ionen in einem Halbleiterbauelement |
| KR100689673B1 (ko) * | 2004-05-10 | 2007-03-09 | 주식회사 하이닉스반도체 | 반도체소자의 불균일 이온주입 방법 |
-
1995
- 1995-12-29 KR KR1019950067231A patent/KR0166806B1/ko not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101726746B1 (ko) | 2016-05-02 | 2017-04-13 | 박지호 | 논두렁 누수 방지용 필름 삽입장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR0166806B1 (ko) | 1999-02-01 |
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