KR970053792A - 반도체 장치의 보호 소자 - Google Patents

반도체 장치의 보호 소자 Download PDF

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Publication number
KR970053792A
KR970053792A KR1019950068221A KR19950068221A KR970053792A KR 970053792 A KR970053792 A KR 970053792A KR 1019950068221 A KR1019950068221 A KR 1019950068221A KR 19950068221 A KR19950068221 A KR 19950068221A KR 970053792 A KR970053792 A KR 970053792A
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KR
South Korea
Prior art keywords
region
semiconductor device
protection element
substrate
internal circuit
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Application number
KR1019950068221A
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English (en)
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KR0169359B1 (ko
Inventor
권규형
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김광호
삼성전자 주식회사
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Priority to KR1019950068221A priority Critical patent/KR0169359B1/ko
Priority to JP8284361A priority patent/JPH09191079A/ja
Publication of KR970053792A publication Critical patent/KR970053792A/ko
Application granted granted Critical
Publication of KR0169359B1 publication Critical patent/KR0169359B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3224—Materials thereof being Group IIB-VIA semiconductors
    • H10P14/3226—Oxides

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  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

본 발명은 반도체 장치의 보호 소자에 관한 것으로서, 더욱 상세하게는, 동작 전압을 낮춘 입출력 보호 소자에 관한 것이다. 본 발명에 따른 반도체 장치의 보호 소자는 고립된 베이스 영역을 가지는 접합 트랜지스터로서 이미터 영역은 보호하고자 하는 내부 회로의 입력단에 연결되고 컬렉터 영역은 내부 회로의 전원 전압에 연결된다. 이 때, 컬렉터 영역의 역할을 하는 기판을 외부와 연결하는 고농도 n+영역을 베이스 영역과 접하게 하여 음의 전압이 인가되는 경우 컬렉터-베이스 간 항복이 고농도 n+영역과 베이스 영역의 사이에서 일어나게 함으로써 동작 전압을 줄일 수 있다.

Description

반도체 장치의 보호 소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 본 발명의 실시예에 따른 반도체 장치의 보호 소자의 단면도이다.

Claims (6)

  1. 제1도전형의 반도체 기판, 상기 기판에 형성되어 있는 제2도전형의 제1영역, 상기 제1영역에 형성되어 있는 제1도전형의 제2영역, 그리고 상기 기판에 상기 기판보다 고농도로 형성되어 있으며 상기 제1영역과 닿아 있는 제1도전형의 제3영역을 포함하는 반도체 장치의 보호 소자.
  2. 제1항에서, 상기 제1도전형은 n형이고 상기 제2도전형은 p형인 입출력 보호 소자.
  3. 제1항에서, 상기 제2영역은 상기 기판보다 고농도인 반도체 장치의 보호 소자.
  4. 제1항에서, 상기 제2영역과 상기 제3영역의 사이에 형성되어 있는 산화막을 더 포함하는 반도체 장치의 보호 소자.
  5. 제1항에서, 상기 제1영역은 외부와 연결되지 않는 반도체 장치의 보호 소자.
  6. 제1항에서, 상기 제2영역은 보호하고자 하는 내부 회로의 입력단과 연결되고 상기 제3영역은 상기 내부 회로의 전원 전압이 인가되는 반도체 장치의 보호 소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950068221A 1995-12-30 1995-12-30 반도체 장치의 보호 소자 Expired - Fee Related KR0169359B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019950068221A KR0169359B1 (ko) 1995-12-30 1995-12-30 반도체 장치의 보호 소자
JP8284361A JPH09191079A (ja) 1995-12-30 1996-10-25 半導体装置の保護素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950068221A KR0169359B1 (ko) 1995-12-30 1995-12-30 반도체 장치의 보호 소자

Publications (2)

Publication Number Publication Date
KR970053792A true KR970053792A (ko) 1997-07-31
KR0169359B1 KR0169359B1 (ko) 1999-01-15

Family

ID=19447979

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950068221A Expired - Fee Related KR0169359B1 (ko) 1995-12-30 1995-12-30 반도체 장치의 보호 소자

Country Status (2)

Country Link
JP (1) JPH09191079A (ko)
KR (1) KR0169359B1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8648419B2 (en) 2010-01-20 2014-02-11 Freescale Semiconductor, Inc. ESD protection device and method
US9543420B2 (en) 2013-07-19 2017-01-10 Nxp Usa, Inc. Protection device and related fabrication methods

Also Published As

Publication number Publication date
KR0169359B1 (ko) 1999-01-15
JPH09191079A (ja) 1997-07-22

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