KR970062009A - 형광체 및 그 제조방법 - Google Patents
형광체 및 그 제조방법 Download PDFInfo
- Publication number
- KR970062009A KR970062009A KR1019970005879A KR19970005879A KR970062009A KR 970062009 A KR970062009 A KR 970062009A KR 1019970005879 A KR1019970005879 A KR 1019970005879A KR 19970005879 A KR19970005879 A KR 19970005879A KR 970062009 A KR970062009 A KR 970062009A
- Authority
- KR
- South Korea
- Prior art keywords
- oxygen
- phosphor
- dope
- mol
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
- C09K11/62—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing gallium, indium or thallium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
- C04B35/62675—Thermal treatment of powders or mixtures thereof other than sintering characterised by the treatment temperature
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
Claims (6)
- 화학시 Ga1-×In×N:A(단, 0x0.8, A=Zn 또는 Mg)로 표시되는 것을 특징으로 하는 형광체.
- 원료물질인 산소를 함우하는 않는 갈륨화합물과, 산소를 함유하지 않는 인듐화합물과, 산소를 함유하지 않는 도프물질중에서 적어도, 산소를 함유하지 않는 갈륨화합물과 산소를 함유하지 않는 도프물질을 함유하는 원료물질을 선택하여 혼합하고, 질소를 함유하는 분위기내에서 이들을 가열하여 화학식 Ga1-XInxN : A(단, 0x0.8, A=Zn 또는 Mg)로 표시되는 형광체를 제조하는 것을 특징으로 하는 형광체 제조방법.
- 원료물질인 산소를 함유하지 않는 갈륨화합물과, 산소를 함유하지 않는 인듐화합물과, 산소를 함유하지 않는 도프물질중에서, 적어도, 산소를 함유하지 않는 갈륨화합물과 산소를 함유하지 않는 도프물질을 함유하는 원료물질을 선택하여 혼합하고, 질소를 함유하는 분위기내에서 이들을 급속가열 및 급속냉각함으로써 화학식 Ga1-XInxN : A(단, 0X0.8, A=Zn 또는 Mg)로 표시되는 형광체를 제조하는 것을 특징으로 하는 형광체 제조방법.
- 제2항 또는 제3항에 있어서, 상기 갈륨화합물이 황화갈륨라고, 상기 인듐화합물이 황화인듐이고, 산소를 함유하지 않는 상기 도프물질이 황화 또는 염화한 도프물질인 것을 특징으로 하는 형광체 제조방법.
- 제3항에 있어서, 상기 급속가열 및 급속냉각속도가 1×107~1×104℃/s인 것을 특징으로 하는 형광체 제조방법.
- 제3항에 또는 제5항에 있어서, 질소를 함유하는 반응가스에 부유한 상기 원료물질이 플라즈마를 통과함으로써 그 원료물질이 급속가열 및 금속냉각되는 것을 특징으로 하는 형광체 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP96-043032 | 1996-02-29 | ||
| JP8043032A JP2947156B2 (ja) | 1996-02-29 | 1996-02-29 | 蛍光体の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970062009A true KR970062009A (ko) | 1997-09-12 |
| KR100261972B1 KR100261972B1 (ko) | 2000-07-15 |
Family
ID=12652600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019970005879A Expired - Fee Related KR100261972B1 (ko) | 1996-02-29 | 1997-02-26 | 형광체및그제조방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5858278A (ko) |
| JP (1) | JP2947156B2 (ko) |
| KR (1) | KR100261972B1 (ko) |
| CN (1) | CN1094965C (ko) |
| FR (1) | FR2745584B1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100358280B1 (ko) * | 1998-03-25 | 2002-10-25 | 후다바 덴시 고교 가부시키가이샤 | 형광체 및 형광체의 제조방법 |
Families Citing this family (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2747686B1 (fr) * | 1996-04-22 | 2002-07-05 | Futaba Denshi Kogyo Kk | Materiau fluorescent |
| TW498102B (en) * | 1998-12-28 | 2002-08-11 | Futaba Denshi Kogyo Kk | A process for preparing GaN fluorescent substance |
| JP2002289927A (ja) * | 2001-03-27 | 2002-10-04 | Ngk Insulators Ltd | 発光素子 |
| WO2003080764A1 (en) * | 2002-03-22 | 2003-10-02 | Nichia Corporation | Nitride phosphor and method for preparation thereof, and light emitting device |
| JP4020412B2 (ja) * | 2002-04-09 | 2007-12-12 | 日亜化学工業株式会社 | 窒化ガリウム蛍光体とその製造方法およびこの蛍光体を使用してなるディスプレイデバイス |
| JP4131139B2 (ja) * | 2002-07-30 | 2008-08-13 | 日亜化学工業株式会社 | 電子線励起ディスプレイ、及びそれに用いる赤色発光蛍光体 |
| US10340424B2 (en) | 2002-08-30 | 2019-07-02 | GE Lighting Solutions, LLC | Light emitting diode component |
| AU2003276867A1 (en) * | 2002-09-19 | 2004-04-08 | Cree, Inc. | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
| US20050104072A1 (en) | 2003-08-14 | 2005-05-19 | Slater David B.Jr. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
| US7029935B2 (en) * | 2003-09-09 | 2006-04-18 | Cree, Inc. | Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same |
| US7183587B2 (en) * | 2003-09-09 | 2007-02-27 | Cree, Inc. | Solid metal block mounting substrates for semiconductor light emitting devices |
| US7915085B2 (en) * | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
| US7355284B2 (en) | 2004-03-29 | 2008-04-08 | Cree, Inc. | Semiconductor light emitting devices including flexible film having therein an optical element |
| US7217583B2 (en) * | 2004-09-21 | 2007-05-15 | Cree, Inc. | Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension |
| US7372198B2 (en) * | 2004-09-23 | 2008-05-13 | Cree, Inc. | Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor |
| US20060097385A1 (en) | 2004-10-25 | 2006-05-11 | Negley Gerald H | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
| US7322732B2 (en) | 2004-12-23 | 2008-01-29 | Cree, Inc. | Light emitting diode arrays for direct backlighting of liquid crystal displays |
| US7304694B2 (en) * | 2005-01-12 | 2007-12-04 | Cree, Inc. | Solid colloidal dispersions for backlighting of liquid crystal displays |
| JP2007056164A (ja) | 2005-08-25 | 2007-03-08 | Univ Nagoya | 発光層形成用基材、発光体及び発光物質 |
| WO2007086973A2 (en) * | 2005-11-04 | 2007-08-02 | Rutgers, The State University Of New Jersey | High temperature reactor for the production of nanophase wc/co powder |
| EP1963743B1 (en) * | 2005-12-21 | 2016-09-07 | Cree, Inc. | Lighting device |
| EP1969633B1 (en) | 2005-12-22 | 2018-08-29 | Cree, Inc. | Lighting device |
| WO2007084640A2 (en) * | 2006-01-20 | 2007-07-26 | Cree Led Lighting Solutions, Inc. | Shifting spectral content in solid state light emitters by spatially separating lumiphor films |
| US8441179B2 (en) | 2006-01-20 | 2013-05-14 | Cree, Inc. | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources |
| US8969908B2 (en) * | 2006-04-04 | 2015-03-03 | Cree, Inc. | Uniform emission LED package |
| EP2027602A4 (en) * | 2006-05-23 | 2012-11-28 | Cree Inc | LIGHTING DEVICE AND METHOD OF MAKING |
| US8033692B2 (en) * | 2006-05-23 | 2011-10-11 | Cree, Inc. | Lighting device |
| US7943952B2 (en) * | 2006-07-31 | 2011-05-17 | Cree, Inc. | Method of uniform phosphor chip coating and LED package fabricated using method |
| US7763478B2 (en) | 2006-08-21 | 2010-07-27 | Cree, Inc. | Methods of forming semiconductor light emitting device packages by liquid injection molding |
| US10295147B2 (en) * | 2006-11-09 | 2019-05-21 | Cree, Inc. | LED array and method for fabricating same |
| US9024349B2 (en) * | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US9159888B2 (en) * | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US8232564B2 (en) * | 2007-01-22 | 2012-07-31 | Cree, Inc. | Wafer level phosphor coating technique for warm light emitting diodes |
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| US9061450B2 (en) * | 2007-02-12 | 2015-06-23 | Cree, Inc. | Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding |
| US7910944B2 (en) * | 2007-05-04 | 2011-03-22 | Cree, Inc. | Side mountable semiconductor light emitting device packages and panels |
| US10505083B2 (en) * | 2007-07-11 | 2019-12-10 | Cree, Inc. | Coating method utilizing phosphor containment structure and devices fabricated using same |
| JP5431320B2 (ja) * | 2007-07-17 | 2014-03-05 | クリー インコーポレイテッド | 内部光学機能を備えた光学素子およびその製造方法 |
| US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
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| US8772817B2 (en) | 2010-12-22 | 2014-07-08 | Cree, Inc. | Electronic device submounts including substrates with thermally conductive vias |
| US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
| EP3788094A2 (en) | 2018-04-27 | 2021-03-10 | Genedit Inc. | Cationic polymer and use for biomolecule delivery |
| WO2020067142A1 (en) | 2018-09-25 | 2020-04-02 | The University Of Tokyo | Amphiphilic poly(amino acid), block copolymer using the amphiphilic poly(amino acid), and complex including the amphiphilic poly(amino acid) or the block copolymer and nucleic acid |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3819974A (en) * | 1973-03-12 | 1974-06-25 | D Stevenson | Gallium nitride metal-semiconductor junction light emitting diode |
| JPS5141686A (en) * | 1974-10-07 | 1976-04-08 | Matsushita Electric Industrial Co Ltd | Keikotainoseiho |
| CA1071068A (en) * | 1975-03-19 | 1980-02-05 | Guy-Michel Jacob | Method of manufacturing single crystals by growth from the vapour phase |
| DD225455A1 (de) * | 1984-05-29 | 1985-07-31 | Univ Leipzig | Verfahren und vorrichtung zur herstellung von gan |
| WO1992016966A1 (en) * | 1991-03-18 | 1992-10-01 | Boston University | A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
| JP3146783B2 (ja) * | 1993-08-06 | 2001-03-19 | 株式会社デンソー | ロジック回路 |
| JP2767392B2 (ja) * | 1995-01-30 | 1998-06-18 | 名古屋大学長 | 窒化ガリウム系化合物半導体発光素子の作製方法 |
| US5637146A (en) * | 1995-03-30 | 1997-06-10 | Saturn Cosmos Co., Ltd. | Method for the growth of nitride based semiconductors and its apparatus |
-
1996
- 1996-02-29 JP JP8043032A patent/JP2947156B2/ja not_active Expired - Lifetime
-
1997
- 1997-02-20 US US08/803,508 patent/US5858278A/en not_active Expired - Fee Related
- 1997-02-26 KR KR1019970005879A patent/KR100261972B1/ko not_active Expired - Fee Related
- 1997-02-28 CN CN97104854A patent/CN1094965C/zh not_active Expired - Fee Related
- 1997-02-28 FR FR9702399A patent/FR2745584B1/fr not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100358280B1 (ko) * | 1998-03-25 | 2002-10-25 | 후다바 덴시 고교 가부시키가이샤 | 형광체 및 형광체의 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2745584B1 (fr) | 1998-04-24 |
| JP2947156B2 (ja) | 1999-09-13 |
| CN1094965C (zh) | 2002-11-27 |
| US5858278A (en) | 1999-01-12 |
| JPH09235548A (ja) | 1997-09-09 |
| FR2745584A1 (fr) | 1997-09-05 |
| CN1162618A (zh) | 1997-10-22 |
| KR100261972B1 (ko) | 2000-07-15 |
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