KR970077116A - 노광 방법 및 노광 장치 - Google Patents

노광 방법 및 노광 장치 Download PDF

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Publication number
KR970077116A
KR970077116A KR1019970018304A KR19970018304A KR970077116A KR 970077116 A KR970077116 A KR 970077116A KR 1019970018304 A KR1019970018304 A KR 1019970018304A KR 19970018304 A KR19970018304 A KR 19970018304A KR 970077116 A KR970077116 A KR 970077116A
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Prior art keywords
substrate
exposure method
correction
magnification
exposure
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KR1019970018304A
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KR100471461B1 (ko
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도시오 마쯔우라
노부따까 후지모리
도시노부 모리오까
게이 나라
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고노 시게오
니콘 코포레이션
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Priority claimed from JP8121940A external-priority patent/JPH09306818A/ja
Priority claimed from JP8123481A external-priority patent/JPH09306819A/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 발명에서는 복수의 노광 쇼트로부터 화면 합성으로 구성되는 하나의 단위로 해서 중첩 노광의 쇼트 위치 보정을 위한 파라메터를 일체적으로 관리하는 것으로, 이 파라메터는 쇼트 위치의 오프세트, 회전, 배율 등이 될 수 있다. 쇼트 위치의 보정은 소자 패턴을 구성하는 복수의 쇼트의 이음부에서의 중첩 정도차가 최소가 되도록 하는 것이 적합하다.
쇼트 위치 보정의 파라메터를 쇼트 마다가 아닌 하나의 소자를 구성하는 복수의 쇼트를 단위로 해서 설정, 관리하는 것으로, 화면 합성시의 화면 이음 오차, 및 이음부의 중첩 정도차를 작게 억누를 수 있고, 소자내에 형성된 소자의 성능을 소자 전면에 걸쳐 균일화할 수 있다. 그 때문에 LCD 화면상에 바람직하지 않은 선이 출현하는 등의 문제점을 방지할 수 있다.

Description

노광 방법 및 노광 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예를 나타낸 노광 장치의 개략도이다.

Claims (8)

  1. 복수의 쇼트로 된 소자 패턴이 복수 형성된 기판상에 다음 층의 쇼트를 겹쳐 노광하는 노광 방법에 있어서, 하나의 소자를 구성하는 복수의 쇼트를 하나의 단위로 해서 쇼트 위치의 보정을 하는 것을 특징으로 하는 노광 방법.
  2. 제1항에 있어서, 상기 쇼트 위치의 보정은 상기 소자 패턴을 구성하는 복수의 쇼트의 이음부에서 중첩정도가 최소가 되도록 하는 것을 특징으로 하는 노광 방법.
  3. 제1항에 있어서, 상기 쇼트 위치의 보정은 상기 소자 패턴을 구성하는 복수의 쇼트의 이음부에서 중첩정도를 중시해서 하는 것을 특징으로 하는 노광 방법.
  4. 제1항에 있어서, 상기 쇼트 위치의 보정은 상기 중첩 정도를 중시해서 하는 것을 특징으로 하는 노광 방법.
  5. 제1항 내지 제4항에 있어서, 상기 보정은 쇼트 위치의 시프트, 회전, 및 배율인 것을 특징으로 하는 노광 방법.
  6. 마스크에 형성된 패턴을 투영 광학계를 통해 기판상에 연속적으로 존재하는 복수의 영역에 이어 이동좌표계를 따라 전사하는 노광 장치에 있어서, 서로 직교하는 제1축과 제2축으로 결정되는 이동 좌표계를 따라 상기 기판을 올려 2차원적으로 이동하는 기판 스테이지와; 상기 기판상에 형성된 얼라인먼트 마크의 위치를 검출하는 마크 검출 수단과; 상기 투영 광학계의 배율을 보정하는 배율 보정 수단과; 상기 마크 검출 수단에 의해 검출된 얼라인먼트 마크의 위치 정보에 의거해 상기 제1축 방향 및 제2축 방향의 상기 기판의 신축량을 각각 산출하는 연산 수단과, 상기 연산 수단에 의해 산출된 신축량에 의거해 상기 배율 보정 수단에 의한 배율 보정량을 설정하는 설정 수단과; 상기 설정 수단에 의해 설정되는 배율 보정량에 의거해 상기 기판 스테이지의 이동을 규정하는 상기 이동 좌표계의 제1축 및 제2축의 스케일을 각각 동일량으로 변경하는 스케일 변경 수단을 갖춘 것을 특징으로 하는 노광 방법.
  7. 복수 단위 패턴의 상을 투영 광학계에 의해 투영하고, 감광 기판을 2차원으로 이동해서 상기 감광 기판상에 상기 복수의 단위 패턴을 이어 소정의 패턴을 노광하는 노광 방법에 있어서, 상기 감광 기판상에 제1층의 복수의 단위 패턴을 형성하는 단계와, 상기 제1층이 형성된 상기 감광 기판의 변형량을 검출하는 단계와; 상기 검출 결과에 의거해 상기 투영 광학계의 투영 배율을 보정하는 단계와; 상기 투영 배율이 보정량에 의거해 상기 감광 기판의 상기 2차원의 각각의 이동에 관한 보정량을 거의 같게 설정하는 단계로 이루어지는 것을 특징으로 하는 노광 방법.
  8. 제7항에 있어서, 상기 제1층의 복수의 단위의 패턴을 형성하는 단계는 상기 감광 기판에 복수의 얼라인먼트 마크를 형성하는 단계를 포함하고, 상기 감광 기판의 변형량을 검출하는 단계는 상기 복수의 얼라인먼트마크를 검출해서 상기 변형량을 검출하는 것을 특징으로 하는 노광 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970018304A 1996-05-16 1997-05-12 노광방법및노광장치 Expired - Lifetime KR100471461B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP8121940A JPH09306818A (ja) 1996-05-16 1996-05-16 露光方法
JP121940/1996 1996-05-16
JP8123481A JPH09306819A (ja) 1996-05-17 1996-05-17 露光装置
JP123481/1996 1996-05-17

Publications (2)

Publication Number Publication Date
KR970077116A true KR970077116A (ko) 1997-12-12
KR100471461B1 KR100471461B1 (ko) 2005-07-07

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US (1) US5973766A (ko)
KR (1) KR100471461B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000003752A (ko) * 1998-06-29 2000-01-25 김영환 패턴 투영 장치

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211622A (ja) * 1994-01-27 1995-08-11 Nikon Corp 露光方法及び露光システム
TW432469B (en) * 1998-02-06 2001-05-01 Nippon Kogaku Kk Exposure apparatus, exposure method, and recording medium
US6455211B1 (en) * 1998-02-09 2002-09-24 Canon Kabushiki Kaisha Pattern transfer method and apparatus, and device manufacturing method
JPH11307445A (ja) * 1998-04-23 1999-11-05 Nikon Corp 荷電粒子線露光装置及びその投影マスク
JP4100799B2 (ja) * 1999-01-25 2008-06-11 キヤノン株式会社 マスクパターン転写方法、マスクパターン転写装置、デバイス製造方法及び転写マスク
JP3929635B2 (ja) * 1999-03-08 2007-06-13 株式会社東芝 露光方法
KR20010003438A (ko) * 1999-06-23 2001-01-15 김영환 티에프티 어레이 기판의 노광방법
EP1186959B1 (en) * 2000-09-07 2009-06-17 ASML Netherlands B.V. Method for calibrating a lithographic projection apparatus
US6580491B2 (en) 2000-12-26 2003-06-17 International Business Machines Corporation Apparatus and method for compensating for distortion of a printed circuit workpiece substrate
US6628372B2 (en) * 2001-02-16 2003-09-30 Mccullough Andrew W. Use of multiple reticles in lithographic printing tools
US6718224B2 (en) * 2001-09-17 2004-04-06 Yield Dynamics, Inc. System and method for estimating error in a manufacturing process
US6580494B1 (en) 2002-07-16 2003-06-17 International Business Machines Corporation Method and system of distortion compensation in a projection imaging expose system
JP2005148531A (ja) * 2003-11-18 2005-06-09 Adtec Engineeng Co Ltd 基板伸縮に対応したプリント配線基板用露光装置
TWI408506B (zh) * 2005-03-29 2013-09-11 尼康股份有限公司 曝光裝置、曝光裝置的製造方法以及微元件的製造方法
US8139218B2 (en) * 2005-07-06 2012-03-20 Asml Netherlands B.V. Substrate distortion measurement
JP5448724B2 (ja) 2009-10-29 2014-03-19 キヤノン株式会社 露光装置及びデバイスの製造方法
CN103092005B (zh) * 2013-01-21 2015-01-21 深圳市华星光电技术有限公司 玻璃基板的曝光对位方法
CN107976869B (zh) * 2016-10-24 2023-06-30 上海微电子装备（集团）股份有限公司 一种工件台非正交校正方法及校正装置
CN112352201B (zh) * 2018-06-19 2024-06-28 Asml荷兰有限公司 用于控制制造设备和相关联设备的方法
EP4212961A1 (en) * 2022-01-14 2023-07-19 ASML Netherlands B.V. Lithographic performance qualification and associated apparatuses

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4780617A (en) * 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
JP2661015B2 (ja) * 1986-06-11 1997-10-08 株式会社ニコン 位置合わせ方法
JP2569441B2 (ja) * 1987-02-26 1997-01-08 株式会社ニコン 露光方法
DE69123610T2 (de) * 1990-02-02 1997-04-24 Canon K.K., Tokio/Tokyo Belichtungsverfahren
US5117255A (en) * 1990-09-19 1992-05-26 Nikon Corporation Projection exposure apparatus
JP3265512B2 (ja) * 1992-06-09 2002-03-11 株式会社ニコン 露光方法
JP3265504B2 (ja) * 1993-10-12 2002-03-11 株式会社ニコン 露光方法及び装置、並びに半導体素子の製造方法
KR100377887B1 (ko) * 1994-02-10 2003-06-18 가부시키가이샤 니콘 정렬방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000003752A (ko) * 1998-06-29 2000-01-25 김영환 패턴 투영 장치

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US5973766A (en) 1999-10-26
KR100471461B1 (ko) 2005-07-07

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