KR970077155A - 염화수소 및 염소를 사용한 에칭법 - Google Patents

염화수소 및 염소를 사용한 에칭법 Download PDF

Info

Publication number
KR970077155A
KR970077155A KR1019970018384A KR19970018384A KR970077155A KR 970077155 A KR970077155 A KR 970077155A KR 1019970018384 A KR1019970018384 A KR 1019970018384A KR 19970018384 A KR19970018384 A KR 19970018384A KR 970077155 A KR970077155 A KR 970077155A
Authority
KR
South Korea
Prior art keywords
hcl
metal silicide
flowing gas
polysilicon
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019970018384A
Other languages
English (en)
Other versions
KR100262809B1 (ko
Inventor
디. 호 피터
도쿠히사 오이와
그레왈 버린더
스풀러 브루노
코쿤 왈드마
윌트샤이어 구아달루프
Original Assignee
니시무로 타이조
가부시기가이샤 도시바
제프리 엘, 포먼
인터내쇼날 비지니스 머신즈 코오포레이숀
롤프 옴케; 디터 라인하르트
지멘스 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니시무로 타이조, 가부시기가이샤 도시바, 제프리 엘, 포먼, 인터내쇼날 비지니스 머신즈 코오포레이숀, 롤프 옴케; 디터 라인하르트, 지멘스 악티엔게젤샤프트 filed Critical 니시무로 타이조
Publication of KR970077155A publication Critical patent/KR970077155A/ko
Application granted granted Critical
Publication of KR100262809B1 publication Critical patent/KR100262809B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

본 발명은 3 : 1 내지 5 : 1의 HCl : Cl2부피 유동률비에서 HCl 및 Cl2로부터 만들어진 에칭가스를 사용하여 금속 실리사이드/폴리실리콘 복합체를 건조상태로 에칭할 때, 폴리실리콘 보다 더 빠른 속도로 금속 실리사이드층을 제거하는 방법에 관한 것이다.

Description

염화수소 및 염소를 사용한 에칭법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (13)

  1. HCl : Cl2의 유동률 비가 3 : 1 내지 5 : 1 범위인 HCl 및 Cl2의 유동하는 가스 혼합물로부터 만들어진 플라스마와 금속 실리사이드층을 접촉시키는 단계를 포함하는, 에칭법에 의해 금속 실리사이드/폴리실리콘 복합체중에서 폴리실리콘 층 보다 더 빠른 속도로 금속 실리사이드층을 에칭하는 방법.
  2. 제1항에 있어서, 상기 유동하는 가스는 HCl 및 Cl2을 주성분으로 하는 방법.
  3. 제1항에 있어서, 상기 유동하는 가스는 NF3를 추가로 포함하는 방법.
  4. 제1항에 있어서, 상기 유동하는 가스는 O2을 추가로 포함하는 방법.
  5. 제1항에 있어서, 상기 플라스마는 유도 커플링에 의해 발생시키는 방법.
  6. 제5항에 있어서, 상기 온도는 20-60℃의 범위내인 방법.
  7. 제6항에 있어서, 상기 온도는 40-60℃의 범위내인 방법.
  8. 제1항에 있어서, 상기 유동률 비는 3 : 1-4 : 1의 범위내인 방법.
  9. 40-60℃ 범위내의 온도에서 HCl : Cl2의 유동률 비가 3 : 1 내지 5 : 1범위인 HCl 및 Cl2의 유동하는 가스혼합물로부터 만들어진 반응성 이온 스트림과 금속 실리사이드층을 접촉시키는 단계를 포함하는, 에칭법에 의해 금속 실리사이드/폴리실리콘 복합체중에서 폴리실리콘 층보다 더 빠른 속도로 금속 실리사이드층을 에칭하는 방법.
  10. 차단된 금속 실리사이드/폴리실리콘 복합체로부터 자연 산화물을 제거하기에 충분한 시간 동안, NF3, HCl 및 Cl2를 포함하는 유동하는 가스로부터 만들어진 플라스마 또는 반응성 이온 스트림과 상기 복합체를 접촉시키는 단계;상기 NF3의 유동을 중지시키는 단계 및 상기 복합체의 차단되지 않은 부위로부터 상기 금속 실리사이드를 제거하기 위해 충분한 시간동안, HCl : Cl2의 유동률 비가 3 : 1 내지 5 : 1 범위인 HCl 및 Cl2의 유동하는 가스 혼합물로부터 만들어진 플라스마 또는 반응성 이온 스트림과 상기 복합체를 접촉시키므로써 상기 폴리실리콘 보다 더 빠른 속도로 금속 실리사이드 층을 에칭하는 단계를 포함하는 단계들에 의해 차단된 금속 실리사이드/폴리실리콘 복합체를 에칭하는 방법.
  11. 제10항에 있어서, 상기 HCl : Cl2의 유동율 비를 3미만의 값으로 변화시키는 단계를 추가로 포함하는 방법.
  12. 제10항에 있어서, 상기 유동하는 가스는 HCl 및 Cl2를 주성분으로 하는 방법.
  13. 제12항에 있어서, 상기 유동하는 가스는 산소를 추가로 포함하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970018384A 1996-05-13 1997-05-13 염화수소 및 염소를 사용한 에칭법 Expired - Fee Related KR100262809B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/645,458 US5874363A (en) 1996-05-13 1996-05-13 Polycide etching with HCL and chlorine
US8/645,458 1996-05-13
US08/645,458 1996-05-13

Publications (2)

Publication Number Publication Date
KR970077155A true KR970077155A (ko) 1997-12-12
KR100262809B1 KR100262809B1 (ko) 2000-09-01

Family

ID=24589111

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970018384A Expired - Fee Related KR100262809B1 (ko) 1996-05-13 1997-05-13 염화수소 및 염소를 사용한 에칭법

Country Status (6)

Country Link
US (1) US5874363A (ko)
EP (1) EP0807968B1 (ko)
JP (1) JP3300632B2 (ko)
KR (1) KR100262809B1 (ko)
DE (1) DE69734626T2 (ko)
TW (1) TW334595B (ko)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6797188B1 (en) 1997-11-12 2004-09-28 Meihua Shen Self-cleaning process for etching silicon-containing material
US6322714B1 (en) 1997-11-12 2001-11-27 Applied Materials Inc. Process for etching silicon-containing material on substrates
US6136211A (en) * 1997-11-12 2000-10-24 Applied Materials, Inc. Self-cleaning etch process
US6872322B1 (en) 1997-11-12 2005-03-29 Applied Materials, Inc. Multiple stage process for cleaning process chambers
EP0932190A1 (en) * 1997-12-30 1999-07-28 International Business Machines Corporation Method of plasma etching the tungsten silicide layer in the gate conductor stack formation
US6372151B1 (en) 1999-07-27 2002-04-16 Applied Materials, Inc. Storage poly process without carbon contamination
US6527968B1 (en) 2000-03-27 2003-03-04 Applied Materials Inc. Two-stage self-cleaning silicon etch process
EP1156519A1 (en) * 2000-05-16 2001-11-21 Semiconductor 300 GmbH & Co. KG Gate etch process for 12 inch wafers
US7084066B1 (en) * 2000-07-03 2006-08-01 Cypress Semiconductor Corporation Method of uniformly etching refractory metals, refractory metal alloys and refractory metal silicides
EP1195802A1 (en) * 2000-10-06 2002-04-10 Semiconductor300 GmbH & Co KG Process for forming conductor lines on a semiconductor product
US6905800B1 (en) 2000-11-21 2005-06-14 Stephen Yuen Etching a substrate in a process zone
US6852242B2 (en) 2001-02-23 2005-02-08 Zhi-Wen Sun Cleaning of multicompositional etchant residues
JP5037766B2 (ja) * 2001-09-10 2012-10-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7833389B1 (en) * 2005-01-21 2010-11-16 Microcontinuum, Inc. Replication tools and related fabrication methods and apparatus
US9307648B2 (en) * 2004-01-21 2016-04-05 Microcontinuum, Inc. Roll-to-roll patterning of transparent and metallic layers
WO2006078918A2 (en) 2005-01-21 2006-07-27 Microcontinuum, Inc. Replication tools and related fabrication methods and apparatus
US8293430B2 (en) 2005-01-27 2012-10-23 Applied Materials, Inc. Method for etching a molybdenum layer suitable for photomask fabrication
EP1905065B1 (en) * 2005-06-20 2014-08-13 Microcontinuum, Inc. Roll-to-roll patterning
WO2007100849A2 (en) 2006-02-27 2007-09-07 Microcontinuum, Inc. Formation of pattern replicating tools
US8118946B2 (en) * 2007-11-30 2012-02-21 Wesley George Lau Cleaning process residues from substrate processing chamber components
US8845912B2 (en) 2010-11-22 2014-09-30 Microcontinuum, Inc. Tools and methods for forming semi-transparent patterning masks
US9589797B2 (en) 2013-05-17 2017-03-07 Microcontinuum, Inc. Tools and methods for producing nanoantenna electronic devices

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5219485A (en) * 1985-10-11 1993-06-15 Applied Materials, Inc. Materials and methods for etching silicides, polycrystalline silicon and polycides
US5354416A (en) * 1986-09-05 1994-10-11 Sadayuki Okudaira Dry etching method
US4778563A (en) * 1987-03-26 1988-10-18 Applied Materials, Inc. Materials and methods for etching tungsten polycides using silicide as a mask
JPH0277124A (ja) * 1988-06-29 1990-03-16 Tokyo Electron Ltd ドライエッチング方法
JPH0383335A (ja) * 1989-08-28 1991-04-09 Hitachi Ltd エッチング方法
JP2673380B2 (ja) * 1990-02-20 1997-11-05 三菱電機株式会社 プラズマエッチングの方法
JP3127454B2 (ja) * 1990-08-08 2001-01-22 ソニー株式会社 シリコン系被エッチング材のエッチング方法
US5169487A (en) * 1990-08-27 1992-12-08 Micron Technology, Inc. Anisotropic etch method
US5322812A (en) * 1991-03-20 1994-06-21 Crosspoint Solutions, Inc. Improved method of fabricating antifuses in an integrated circuit device and resulting structure
JP3210359B2 (ja) * 1991-05-29 2001-09-17 株式会社東芝 ドライエッチング方法
US5358601A (en) * 1991-09-24 1994-10-25 Micron Technology, Inc. Process for isotropically etching semiconductor devices
US5387556A (en) * 1993-02-24 1995-02-07 Applied Materials, Inc. Etching aluminum and its alloys using HC1, C1-containing etchant and N.sub.2
US5543362A (en) * 1995-03-28 1996-08-06 Motorola, Inc. Process for fabricating refractory-metal silicide layers in a semiconductor device

Also Published As

Publication number Publication date
US5874363A (en) 1999-02-23
EP0807968B1 (en) 2005-11-16
KR100262809B1 (ko) 2000-09-01
EP0807968A3 (en) 1999-07-28
TW334595B (en) 1998-06-21
JP3300632B2 (ja) 2002-07-08
EP0807968A2 (en) 1997-11-19
JPH1064889A (ja) 1998-03-06
DE69734626D1 (de) 2005-12-22
DE69734626T2 (de) 2006-08-10

Similar Documents

Publication Publication Date Title
KR970077155A (ko) 염화수소 및 염소를 사용한 에칭법
CA2330583A1 (en) Mercury removal from flue gas
JP2003527734A5 (ko)
KR920022416A (ko) 드라이 에칭방법
WO2002097852A3 (en) Plasma etching of silicon carbide
JPS6277485A (ja) 酸化シリコン薄膜のエツチング方法
WO2008027240A3 (en) Selective etch chemistries for forming high aspect ratio features and associated structures
KR940022724A (ko) 드라이에칭방법
ATE404992T1 (de) Herstellungsmethode von öffnungen mit hohem aspektverhältnis
WO2003038153A8 (en) Process for low temperature, dry etching, and dry planarization of copper
JPS57155732A (en) Dry etching
KR970065771A (ko) 금속막의 에칭방법
TW200510561A (en) Stress reduction of sioc low K films
KR950015650A (ko) 반도체 장치 제조방법
WO2004012288A3 (en) Fuel cell system with degradation protected anode
Combescot Thermodynamics of an electron—hole system in semiconductors
ZA200202022B (en) A compact cascade scrubber for scrubbing exhaust gas.
KR970077224A (ko) 폴리사이드 게이트 형성방법
WO2002007194A3 (en) Cleaning gas for semiconductor production equipment
KR930020592A (ko) 폴리사이드막의 에칭방법
EP0066042A3 (en) Methods of processing a silicon substrate for the formation of an integrated circuit therein
JPS62142326A (ja) エツチング方法
CA2345489A1 (en) A process for concentrating fluorine compounds
TW428249B (en) Etch gases
Nakamura et al. Correlation between Etch Selectivity and Neutral Radical Composition in High-Density Fluorocarbon Plasmas

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20100428

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20110509

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20110509

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18 Changes to party contact information recorded

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R18-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000