KR970077178A - Ion implantation device for semiconductor device fabrication - Google Patents

Ion implantation device for semiconductor device fabrication Download PDF

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Publication number
KR970077178A
KR970077178A KR1019960016515A KR19960016515A KR970077178A KR 970077178 A KR970077178 A KR 970077178A KR 1019960016515 A KR1019960016515 A KR 1019960016515A KR 19960016515 A KR19960016515 A KR 19960016515A KR 970077178 A KR970077178 A KR 970077178A
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KR
South Korea
Prior art keywords
ion implantation
ion
protective film
ion beam
disk
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KR1019960016515A
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Korean (ko)
Inventor
박동철
김봉현
제성태
이종오
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김광호
삼성전자 주식회사
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Priority to KR1019960016515A priority Critical patent/KR970077178A/en
Publication of KR970077178A publication Critical patent/KR970077178A/en
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Abstract

본 발명은 반도체소자의 제조장비에 사용되는 이온주입장에 관한 것으로 특히 공정의 진행과정에서 발생하는 금속성 오염을 방지하기 위한 이온 주입장치에 관한 것으로, 본 발명에 따른 이온주입장치는 복수개의 웨어퍼를 일정한 간격으로 동심원상으로 위치한 배열된 복수의 패드가 부착된 디스크를 구비하고, 또한 상기 디스크상에 패드의 면적을 제외한 이온빔이 주사되는 영역보다 소정폭 넓은 면적의 소정두께의 보호필림을 부착하거나 코팅하여 형성한 커버수단을 포함하여 웨이퍼 이외에 부위가 이온빔에 의해 스파터링되는 것을 방지함으로서 이온주입과정에서 금속성 파티클의 발생을 억제하여 공장불량을 예방하고, 안정된 이온주입을 유도하므로서 제품의 품질향상은 물론 생산성 향상되도록 한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion implantation apparatus for use in semiconductor device manufacturing equipment, and more particularly, to an ion implantation apparatus for preventing metallic contamination occurring during a process, And a protective film having a predetermined thickness and a predetermined area larger than the area where the ion beam is scanned except the area of the pad is attached to the disk, By preventing the sputtering of the parts other than the wafer by the ion beam including the cover means formed by coating, it is possible to prevent the occurrence of metallic particles during the ion implantation process, Of course, productivity is improved.

Description

반도체소자 제조용 이온주입장치Ion implantation device for semiconductor device fabrication

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2도는 본 발명에 따른 이온주입장치의 디스크 구조도.FIG. 2 is a disk structure of an ion implantation apparatus according to the present invention; FIG.

Claims (5)

복수개의 웨어퍼를 일정한 간격으로 동심원상으로 위치한 배열된 복수의 패드가 부착된 디스크와, 상기 디스크를 회전시키고 웨이퍼의 표면에 이온빔을 주사하는 반도체소자 제조용 이온주입장치에 있어서, 상기 디스크상에 패드의 면적을 제외한 이온빔이 주사되는 영역보다 소정폭 넓은 면적에 설치되는 커버수단을 포함하여 웨이퍼 이외에 부위가 이온빔에 의해 스파터링되는 것을 차단시키는 것을 특징으로 하는 이온주입장치.1. An ion implantation apparatus for manufacturing a semiconductor device for spinning an ion beam on a surface of a wafer by rotating the disk, comprising: a disk having a plurality of pads attached thereto arranged in a concentric circle at a predetermined interval; And cover means provided at an area wider than the region where the ion beam is scanned except for the area of the ion beam to prevent sputtering of the site other than the wafer by the ion beam. 제1항에 있어서, 상기 커버수단은 소정두께의 보호필림을 부착하거나 코팅하여 형성하는 것중 어느 하나로 형성한 것을 특징으로 하는 이온주입장치.The ion implanting apparatus according to claim 1, wherein the cover means is formed of one of a protective film having a predetermined thickness or a coating film formed thereon. 제1항에 있어서, 상기 보호필림의 부착방법으로 상기 디스크에 볼트 또는 열과 전기전도성을 갖는 접착제중 어느 하나를 사용한 고정하는 것을 특징으로 하는 이온주입장치.The ion implanting apparatus according to claim 1, wherein the protective film is fixed to the disk by using a bolt or an adhesive having heat and electric conductivity. 제2항에 있어서, 상기 보호필림은 텅스텐과 스텐레스(SUS)재질중 어느 하나의 재질을 사용하여 형성된 것을 특징으로 하는 이온주입장치.The ion implanting apparatus according to claim 2, wherein the protective film is formed using one of tungsten and stainless steel. 제2항에 있어서, 상기 보호필림은 크리스탈계열의 소재로 형성한 것을 특징으로 하는 이온주입장치.The ion implanting apparatus according to claim 2, wherein the protective film is formed of a crystal-based material. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960016515A 1996-05-16 1996-05-16 Ion implantation device for semiconductor device fabrication Withdrawn KR970077178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960016515A KR970077178A (en) 1996-05-16 1996-05-16 Ion implantation device for semiconductor device fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960016515A KR970077178A (en) 1996-05-16 1996-05-16 Ion implantation device for semiconductor device fabrication

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KR970077178A true KR970077178A (en) 1997-12-12

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KR1019960016515A Withdrawn KR970077178A (en) 1996-05-16 1996-05-16 Ion implantation device for semiconductor device fabrication

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100505631B1 (en) * 1999-03-11 2005-08-03 삼성전자주식회사 Spill over cup comprised inside an ion implantation apparatus and method for fabricating the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100505631B1 (en) * 1999-03-11 2005-08-03 삼성전자주식회사 Spill over cup comprised inside an ion implantation apparatus and method for fabricating the same

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