KR970077182A - Ion generator of semiconductor ion implantation equipment - Google Patents

Ion generator of semiconductor ion implantation equipment Download PDF

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Publication number
KR970077182A
KR970077182A KR1019960015150A KR19960015150A KR970077182A KR 970077182 A KR970077182 A KR 970077182A KR 1019960015150 A KR1019960015150 A KR 1019960015150A KR 19960015150 A KR19960015150 A KR 19960015150A KR 970077182 A KR970077182 A KR 970077182A
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KR
South Korea
Prior art keywords
base plate
filament
ion
generating device
semiconductor
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Abandoned
Application number
KR1019960015150A
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Korean (ko)
Inventor
김원주
김원영
김동식
조홍래
Original Assignee
김광호
삼성전자 주식회사
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960015150A priority Critical patent/KR970077182A/en
Priority to JP8239089A priority patent/JPH09306372A/en
Publication of KR970077182A publication Critical patent/KR970077182A/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/083—Beam forming

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

반도체 제조 설비에 있어서, 버나스 소스(Bernas Source)를 장착하여 사용하고 있는 고전류 이온주입설비의 이온발생장치에 관한 것이다.BACKGROUND OF THE INVENTION Field of the Invention [0001] The present invention relates to an ion generating device of a high current ion implanter equipped with a Bernas Source in a semiconductor manufacturing facility.

본 발명의 구성은 프론트 플레이트(13), 사이드 플레이트(14) 및 베이스 플레이트(15)로 이루어져 이온 반응실(12)을 형성하는 아아크 챔버(11)와, 상기 아아(11)크 챔버내에 설치되어 열전자를 방출하는 것으로 하부가 베이스 플레이트(15)의 관통구멍(15a)을 관통하여 설치된 필라멘트(16)와, 상기 베이스 플레이트의 하부에 설치되어 필라멘트의 하부에 접속된 필라멘트 커넥트 로드(17)로 구성된 반도체 이온주입설비의 이온발생장치에 있어서, 상기 베이스 플레이트(15)의 관통구멍(15a)에 필라멘트(16)와 베이스 플레이트(15) 사이의 절연을 위한 절연체(18)가 삽입 설치되어 이루어진다.The structure of the present invention includes an arc chamber 11 formed of a front plate 13, a side plate 14 and a base plate 15 to form an ion reaction chamber 12, A filament 16 provided below the base plate 15 to penetrate through the through hole 15a of the base plate 15 and a filament connecting rod 17 connected to the lower portion of the filament, An ion generating device of a semiconductor ion implantation facility is provided with an insulator 18 for insulation between a filament 16 and a base plate 15 in a through hole 15a of the base plate 15.

따라서 베이스 플레이트와 필라멘트와의 절연이 확실하게 이루어져 원하는 이온빔을 효율적으로 얻을 수 있고, 플라즈마의 안정화로 설비의 고장 및 수리로 인한 설비의 가동중단율이 감소되어 생산성이 향상되는 효과가 있다.Therefore, the insulation between the base plate and the filament can be reliably obtained, and a desired ion beam can be efficiently obtained. In addition, the stabilization of the plasma can reduce the operation interruption rate of equipment due to the failure and repair of the equipment.

Description

반도체 이온주입설비의 이온발생장치Ion generator of semiconductor ion implantation equipment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2도는 본 발명에 따른 이온발생장치를 나타낸 단면구조도이다.FIG. 2 is a cross-sectional structural view showing an ion generating device according to the present invention. FIG.

Claims (4)

프론트 플레이트, 사이드 플레이트 및 베이스 플레이트로 이루어져 이온 반응실을 형성하는 아아크 챔버와, 상기 아아크 챔버내에 설치되어 열전자를 방출하는 것으로 하부가 베이스 플레이트의 관통구멍을 관통하여 설치된 필라멘트와, 상기 베이스 플레이트의 하부에 설치되어 필라멘트의 하부에 접속된 필라멘트 커넥트 로드로 구성된 반도체 이온주입설비의 이온발생장치에 있어서, 상기 베이스 플레이트의 관통구멍에 필라멘트와 베이스 플레이트 사이의 절연을 위한 절연체가 삽입 설치되어 구성됨을 특징으로 하는 반도체 이온주입설비의 이온발생장치.A filament which is installed in the arc chamber and through which the thermoelectrons are emitted so as to penetrate through the through hole of the base plate, and a lower part of the base plate, And a filament connecting rod connected to the lower portion of the filament. The ion generating device of the semiconductor ion implantation facility is characterized in that an insulator for insulation between the filament and the base plate is inserted into the through hole of the base plate. The ion generating device of the semiconductor ion implantation facility. 제1항에 있어서, 상기 절연체는 관통구멍에 삽입되어 베이스 플레이트와 필라멘트 사이를 전기적으로 차단하는 삽입부와, 상기 삽입부의 하부로 연장 형성되어 베이스 챔버와 필라멘트 커넥트 로드와의 사이를 절연하는 연장절연부로 구성됨을 특징으로 하는 상기 반도체 이온주입설비의 이온발생장치.The insulator according to claim 1, wherein the insulator comprises: an inserting portion inserted into the through hole to electrically isolate the base plate from the filament; and an elongated insulating member insulated from the base chamber and the filament connecting rod, Wherein the ion implantation system comprises a semiconductor ion implantation system. 제1항에 있어서, 상기 절연체의 재질이 브론나이트라이드(Boron Nitride)인 것을 특징으로 하는 상기 반도체 이온주입설비의 이온발생장치.The ion generating device of claim 1, wherein the insulator is made of boron nitride. 제1항에 있어서, 상기 절연체의 재질이 세라믹인 것을 특징으로 하는 상기 반도체 이온주입설비의 이온발생장치.The ion generating device of claim 1, wherein the insulator is made of ceramic. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960015150A 1996-05-08 1996-05-08 Ion generator of semiconductor ion implantation equipment Abandoned KR970077182A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019960015150A KR970077182A (en) 1996-05-08 1996-05-08 Ion generator of semiconductor ion implantation equipment
JP8239089A JPH09306372A (en) 1996-05-08 1996-09-10 Ion generator for semiconductor ion implantation equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960015150A KR970077182A (en) 1996-05-08 1996-05-08 Ion generator of semiconductor ion implantation equipment

Publications (1)

Publication Number Publication Date
KR970077182A true KR970077182A (en) 1997-12-12

Family

ID=19458134

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960015150A Abandoned KR970077182A (en) 1996-05-08 1996-05-08 Ion generator of semiconductor ion implantation equipment

Country Status (2)

Country Link
JP (1) JPH09306372A (en)
KR (1) KR970077182A (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2131051B (en) * 1982-05-07 1985-10-23 Inst Mash Im A A Blagonravova Method for chemical heat treatment of parts made of steels and alloys
JPH08111198A (en) * 1994-10-11 1996-04-30 Ulvac Japan Ltd Ion source

Also Published As

Publication number Publication date
JPH09306372A (en) 1997-11-28

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