KR970077296A - 알루미늄 박막의 식각 방법 - Google Patents

알루미늄 박막의 식각 방법 Download PDF

Info

Publication number
KR970077296A
KR970077296A KR1019960016617A KR19960016617A KR970077296A KR 970077296 A KR970077296 A KR 970077296A KR 1019960016617 A KR1019960016617 A KR 1019960016617A KR 19960016617 A KR19960016617 A KR 19960016617A KR 970077296 A KR970077296 A KR 970077296A
Authority
KR
South Korea
Prior art keywords
photoresist
etching
thin film
aluminum thin
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019960016617A
Other languages
English (en)
Other versions
KR100216732B1 (ko
Inventor
이만형
장동근
Original Assignee
곽정소
한국전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 곽정소, 한국전자 주식회사 filed Critical 곽정소
Priority to KR1019960016617A priority Critical patent/KR100216732B1/ko
Publication of KR970077296A publication Critical patent/KR970077296A/ko
Application granted granted Critical
Publication of KR100216732B1 publication Critical patent/KR100216732B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Manufacturing Of Printed Circuit Boards (AREA)
  • Weting (AREA)

Abstract

본 발명은 반도체 및 이를 이용하는 소자의 리쏘그래피 공정에서 세라믹 기판 위에 증착된 알루미늄막을 식각하는 방법에 관한 것으로, 반도체 기판 상부의 알루미늄 박막 상에 양성의 포토레지스트를 침적하는 단계; 상기 포토레지스트를 노광 후 적정 농도의 테트라메틸암모늄하이드록사이드 용액으로 현상하여 패터닝하는 단계; 상기에서 형성된 포토레지스트 패턴을 UV 큐어링하는 단계; 및 상기 결과물을 적정 농도의 테트라메틸암모늄하이드록사이드 용액에 담궈 알루미늄 박막을 식각하는 단계로 이루어졌기 때문에, 기판의 부식 방지는 물론 표면 경화에 의해 포토레지스트막의 식각을 지연시킨 가운데 알루미늄막의 패턴을 형성할 수 있고, 아울러 현상액과 식각 용액이 같은 것을 사용함으로써 원가 절감에도 기여할 수 있다.

Description

알루미늄 박막의 식각 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 알루미늄 박막의 식각 공정을 보이는 블록도.

Claims (3)

  1. 반도체 기본 구성이 형성된 반도체 기판 및 세라믹 기판 상에 알루미늄막 및 양성의 포토레지스트를 증착 내지는 침적하는 단계; 상기 포토레지스트를 노광 및 현상하여 패터닝하는 단계; 상기에서 포토레지스트 패턴을 UV큐어링하는 단계; 및 상기 포토레지스트 패턴을 식각마스크로 사용하여 알루미늄막을 습식식각하는 단계를 구비하여 이루어진 알루미늄 박막의 식각 방법.
  2. 제1항에 있어서, 상기에서 포토레지스트의 현상액과 알루미늄막 식각 용액이 알칼리성 식각 용액인 것을 특징으로 하는 알루미늄 박막의 식각 방법.
  3. 제2항에 있어서, 상기에서 알칼리성 식각 용액은 테트라메틸암모늄하이드록사이드 용액인 것을 특징으로 하는 알루미늄 박막의 식각 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960016617A 1996-05-17 1996-05-17 알루미늄 박막의 식각방법 Expired - Fee Related KR100216732B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960016617A KR100216732B1 (ko) 1996-05-17 1996-05-17 알루미늄 박막의 식각방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960016617A KR100216732B1 (ko) 1996-05-17 1996-05-17 알루미늄 박막의 식각방법

Publications (2)

Publication Number Publication Date
KR970077296A true KR970077296A (ko) 1997-12-12
KR100216732B1 KR100216732B1 (ko) 1999-09-01

Family

ID=19458983

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960016617A Expired - Fee Related KR100216732B1 (ko) 1996-05-17 1996-05-17 알루미늄 박막의 식각방법

Country Status (1)

Country Link
KR (1) KR100216732B1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000007554A (ko) * 1998-07-04 2000-02-07 윤종용 반도체장치의 제조를 위한 알루미늄막의 에칭방법
CN113016053B (zh) * 2018-11-16 2025-08-19 朗姆研究公司 气泡缺陷减少

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01105536A (ja) * 1987-10-19 1989-04-24 Sanyo Electric Co Ltd フォトレジストパターン形成方法
JPH06181207A (ja) * 1992-12-11 1994-06-28 Kawasaki Steel Corp Ａｌ配線形成方法

Also Published As

Publication number Publication date
KR100216732B1 (ko) 1999-09-01

Similar Documents

Publication Publication Date Title
KR950021058A (ko) 위상반전마스크 제조방법
KR970077296A (ko) 알루미늄 박막의 식각 방법
KR910006782A (ko) 반도체장치의 제조방법
KR960001894A (ko) 레지스트 패턴의 형성방법과 그 방법에 쓰이는 산성 수용성 재료 조성물
KR970008372A (ko) 반도체장치의 미세 패턴 형성방법
KR910001460A (ko) 포토레지스트의 측벽 프로파일 개선 방법
KR910005101A (ko) 레지스트패턴 형성방법
KR970071126A (ko) 이중 포토레지스트를 이용한 패턴 형성방법
RU96107191A (ru) Способ фотолитографии
RU2000106951A (ru) Способ формирования фоторезистивной маски
KR960002592A (ko) 반도체 소자의 제조방법
KR960002597A (ko) 미세패턴 형성방법
KR970016794A (ko) 하프톤 위상 반전 마스크의 제조 방법
KR970003415A (ko) 반도체 기판상에 감광막 패턴을 형성하는 방법
KR960005806A (ko) 반도체소자의 감광막패턴 제조방법
KR960011550A (ko) 이중 식각 단면 형성방법
KR950006981A (ko) 포토레지스트패턴 형성방법
KR940012060A (ko) 감광막 패턴 형성방법
KR970077715A (ko) 메탈 배선 형성방법
KR970028817A (ko) 감광막 패턴 형성 방법
KR970054993A (ko) 부분 회절 격자 형성 방법
KR950014983A (ko) 사진식각방법
KR950027922A (ko) 반도체 제조용 마스크 제조방법
KR970072014A (ko) 반도체 장치의 얼라인 키 패턴 형성방법
KR970054538A (ko) T-형 게이트 형성방법

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20040601

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20050602

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20050602

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000